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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3032L-13

Name: DMN3032L-13
Brand: Diodes Incorporated
SKU: DMN3032L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3032L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3032L-13.pdf

Description:: MOSFET BVDSS: 8V~24V SOT23 T&R 1

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Product details

Overview

DMN3032L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 31mΩ R_DS(ON) @ 10V V_GS, and 5.4A continuous drain current at +25°C - deployed as a synchronous rectifier or load switch in portable DC-DC converters and battery charging circuits.

For engineers reviewing the DMN3032L-13 datasheet, DMN3032L-13 pinout, DMN3032L-13 application, or DMN3032L-13 equivalent, key selection criteria include low R_DS(ON) at 4.5V gate drive, fast switching (t_F = 13.4ns), thermal resistance (R_θJA = 93°C/W on recommended layout), and SOT23 footprint compatibility with space-constrained power rails.

Technical Context

This MOSFET uses planar silicon process to achieve low on-resistance while maintaining controlled gate charge (Q_g = 10.1nC @ 10V) and low output capacitance (C_oss = 51pF). Its V_GS(TH) range (1.0–2.0V) ensures reliable turn-on with standard logic-level drivers.

The device features integrated body diode with V_SD = 0.7V @ 1A and exhibits normalized R_DS(ON) drift of ≤1.5× from –55°C to +150°C, supporting operation across industrial temperature ranges without derating beyond datasheet limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - supports input rails up to 24V nominal systems with margin for transients
R_DS(ON)	31mΩ @ V_GS = 10V - enables <150mW conduction loss at 5.4A in compact SOT23
I_D (max)	5.4A @ T_A = +25°C - usable in 3–5A load-switch or buck converter high-side applications
Q_g	10.1nC @ V_GS = 10V - determines gate-drive power and switching speed in PWM control
C_iss	481pF - impacts Miller effect and gate-driver sizing in hard-switched topologies
t_F	13.4ns - reduces switching losses during turn-off in high-frequency (>1MHz) DC-DC stages
R_θJA	93°C/W - requires minimal copper area (2oz FR-4, 1″² pad) to sustain full current at +70°C ambient

Pinout & Package

Package: SOT23 - surface-mount plastic package (2.4mm × 1.3mm × 0.915mm), RoHS-compliant, matte tin-plated leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; used as reference for gate drive and thermal path
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <10.1nC charge for full enhancement; sensitive to ESD
3 (Drain)	Main current-carrying terminal	Connected to high-side rail or inductive load; carries full switched current and dissipates R_DS(ON) loss

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	45mΩ - enables direct interface with 3.3V/5V microcontroller GPIOs without level-shifting
Fast switching speed	t_D(OFF) = 16.9ns - minimizes dead-time losses in synchronous rectification
Low input capacitance	C_iss = 481pF - reduces gate-drive power and improves efficiency in high-frequency converters
Integrated body diode	V_SD = 0.7V @ 1A - provides freewheeling path in buck/boost topologies without external diode
Thermal performance	R_θJA = 93°C/W - allows 5.4A operation with only 1″² copper pour, reducing PCB layer count

Applications

Battery Charging Circuit

USB Power Delivery Switch

Use Scenario: Single-cell Li-ion charger with input overvoltage protection and load disconnect.

IC Role / Device Role / Timing Role: N-channel high-side load switch controlling battery connection to system bus.

Use Value: 31mΩ R_DS(ON) limits voltage drop to <165mV at 5.4A, preserving charging efficiency and thermal headroom in handheld enclosures.

Use Scenario: USB-C port with programmable power supply (PPS) and reverse-current blocking.

IC Role / Device Role / Timing Role: Low-side switch in 5–20V input path, enabling rapid enable/disable during voltage transitions.

Use Value: 13.4ns fall time ensures clean turn-off during dynamic PPS voltage slewing, preventing shoot-through in dual-MOSFET configurations.

Portable DC-DC Converter

Power Bank Load Switch

Use Scenario: 12V-to-5V buck converter in compact power bank with 2A output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in low-side position.

Use Value: 45mΩ R_DS(ON) @ 4.5V gate drive reduces conduction loss by >40% vs. typical 0.35V Schottky, extending runtime per charge cycle.

Use Scenario: Output stage of multi-cell power bank delivering regulated 5V/3A to USB-A ports.

IC Role / Device Role / Timing Role: High-side power switch isolating output during sleep or fault conditions.

Use Value: 1.0–2.0V V_GS(TH) ensures robust turn-on with 3.3V enable signal from battery management IC, eliminating need for external driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025L-7	Lower R_DS(ON) (25mΩ @ 10V), same SOT23 package, higher Q_g (12.5nC)	Better conduction loss but slower switching; less suitable for >1MHz designs	Select when thermal budget is tighter than switching frequency requirement
AO3400	Higher R_DS(ON) (40mΩ @ 10V), identical pinout, lower C_iss (370pF)	Reduced gate-drive demand but higher I²R loss at high current	Select when gate-drive strength is limited and peak current <4A

Compared with DMN3032L-13, DMN3025L-7 offers lower conduction loss at the cost of increased switching loss, while AO3400 trades higher R_DS(ON) for reduced gate-drive burden - making DMN3032L-13 the balanced choice for 3–5A, 500kHz–1MHz portable power stages.

Availability

DMN3032L-13 is available at Aetrix Electronics and suitable for battery charging, portable DC-DC converters, and USB power delivery systems requiring stable component supply with consistent SOT23 footprint and thermal performance.

Supply support for DMN3032L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3032L belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power management in portable and battery-powered equipment.

FAQ

What is the maximum continuous drain current for DMN3032L-13 at +70°C ambient?

The DMN3032L-13 supports 4.3A continuous drain current at +70°C ambient temperature under steady-state conditions with the minimum recommended PCB pad layout (FR-4, 2oz copper). This rating assumes no forced airflow and accounts for thermal resistance of 93°C/W to ambient.

Does DMN3032L-13 require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and limit peak gate current during switching. With Q_g = 10.1nC and typical gate-drive rise times, a 3Ω–10Ω series resistor prevents oscillation and reduces EMI without significantly slowing t_R/t_F, especially when driving from microcontroller GPIOs.

Can DMN3032L-13 be used in automotive applications?

The DMN3032L-13 is not AEC-Q101 qualified. For automotive use, Diodes offers the AEC-Q101-qualified DMN3032LQ-7 variant with PPAP documentation and IATF 16949 manufacturing controls - the -13 tape-and-reel version is intended for commercial and industrial portable power applications only.

What is the safe operating area (SOA) limitation at DC conditions?

At DC operation, the DMN3032L-13 is limited by R_DS(ON) heating and junction temperature. With 31mΩ R_DS(ON) and T_J(max) = 150°C, the absolute maximum DC current is ~4.7A at +25°C ambient using the recommended 1″² copper pad - exceeding this risks thermal runaway due to positive R_DS(ON) temperature coefficient.

DMN3032L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 481 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 800mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3032L-13 FAQ

1.How can I place an order for DMN3032L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3032L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3032L-13 reliable?

The price and inventory of DMN3032L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032L-13 is usually 5 days.

3.What payment methods are accepted for DMN3032L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3032L-13?

DMN3032L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3032L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3032L-13?

For technical support, including DMN3032L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032L-13 requirements.

6.How does Aetrix verify that DMN3032L-13 is sourced from the original manufacturer or authorized distributors?

All DMN3032L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032L-13 meets industry standards.

7.What is the process for return or replacement of DMN3032L-13?

All DMN3032L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3032L-13 part is unused and in its original packaging.

Return procedure for DMN3032L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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