Diodes Incorporated DMN3032L-7
- Part No.:
- DMN3032L-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN3032L-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Quantity:
- Payment:

- Shipping:

Inventory:8,998
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Product details
Overview
DMN3032L-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V VDSS, 31 mΩ RDS(ON) @ 10V VGS, and 5.4A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and portable power adaptors.
For engineers reviewing the DMN3032L-7 datasheet, DMN3032L-7 pinout, DMN3032L-7 application, or DMN3032L-7 equivalent, key selection criteria include low gate charge (10.1 nC @ 10V), fast switching (tF = 13.4 ns), thermal resistance (93 °C/W with recommended layout), and SOT23 footprint compatibility in space-constrained battery charging circuits.
Technical Context
This MOSFET employs planar silicon technology to achieve a balance of low on-resistance and controlled gate capacitance (Ciss = 481 pF, Crss = 42 pF), enabling efficient operation in synchronous buck topologies up to ~1 MHz. Its 1.0–2.0 V gate threshold supports direct drive from 3.3V and 5V logic controllers.
Thermal performance is defined under two PCB conditions: 93 °C/W with minimum pad layout (PD = 1.3 W) and 150 °C/W with standard FR-4 (PD = 0.8 W). The body diode exhibits VSD = 0.7–1.0 V at 1 A, suitable for freewheeling in non-synchronous converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 12V/24V DC-DC stages. |
| RDS(ON) | 31 mΩ @ VGS = 10V - Determines conduction loss at full load; enables <150 mW I²R loss at 5.4A. |
| Qg | 10.1 nC @ VGS = 10V - Governs gate driver power and switching transition time in high-frequency PWM control. |
| tF | 13.4 ns - Fast fall time minimizes overlap loss during hard-switched transitions in buck regulators. |
| RθJA | 93 °C/W - Thermal resistance with optimized 2oz copper pad; defines junction-to-ambient rise per watt dissipated. |
| VGS(TH) | 1.0–2.0 V - Ensures reliable turn-on with 3.3V microcontroller GPIO without level-shifting. |
| Ciss | 481 pF - Input capacitance impacts gate drive loop stability and EMI generation in switching nodes. |
Pinout & Package
Package: SOT23 - surface-mount plastic package (2.4 mm × 1.3 mm × 0.915 mm), RoHS-compliant, matte tin-plated leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to power ground or low-side reference; forms common node with body diode cathode. |
| 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring low-charge drive; sensitive to ESD and ringing due to Rg = 2.2 Ω. |
| 3 (Drain) | Power output terminal of the MOSFET channel | Connects to switched node (e.g., buck converter inductor); carries full load current and switching transients. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 45 mΩ - Enables efficient operation directly from 5V logic rails without gate boosting. |
| Low Qgd/Qg ratio | 1.5/10.1 ≈ 0.15 - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments. |
| Fast tR/tF | 18.3 ns / 13.4 ns - Supports >500 kHz switching frequencies while maintaining low dynamic losses. |
| Body diode recovery | VSD = 0.7 V @ 1 A - Low forward drop reduces freewheeling loss in non-synchronous topologies. |
| Thermal derating | 150°C max TJ - Allows operation in sealed enclosures or high ambient temperature battery packs. |
Applications
| Battery Charging Circuits | USB Power Delivery Adaptors |
|---|---|
|
Use Scenario: High-efficiency synchronous rectification in single-cell Li-ion charger ICs with integrated FET drivers. IC Role / Device Role: Low-side switch controlling charge current flow into battery pack with minimal conduction loss. Use Value: 31 mΩ RDS(ON) limits I²R heating to <160 mW at 5.4A, extending thermal margin in compact USB-C chargers. |
Use Scenario: Secondary-side synchronous rectifier in 20W–30W USB PD flyback or buck-boost adaptors. IC Role / Device Role: Replaces Schottky diode to reduce forward voltage drop and improve efficiency above 75% load. Use Value: 0.7 V body diode VSD and 45 mΩ RDS(ON) @ 4.5V enable >92% efficiency at full load vs. ~89% with discrete diode. |
| Portable DC-DC Converters | Load Switches in Wearables |
|
Use Scenario: High-frequency buck regulator in Bluetooth earbuds or smartwatches requiring ultra-low quiescent current and small footprint. IC Role / Device Role: Power switch in integrated PMIC or discrete converter stage operating at 1–2 MHz. Use Value: 481 pF Ciss and 10.1 nC Qg allow clean gate drive with minimal overshoot using 3.3V MCU GPIO and small RC snubber. |
Use Scenario: Controlled power rail enable for sensor modules or display backlight in fitness trackers. IC Role / Device Role: Low-RDS(ON) load switch with fast turn-on/off for power sequencing and inrush limiting. Use Value: 1.0–2.0 V VGS(TH) ensures full enhancement from 1.8V/3.3V system rails; 13.4 ns tF enables sub-10 μs power gating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025L-7 | Lower RDS(ON) (25 mΩ @ 10V), higher Qg (12.5 nC), same SOT23 package | Better conduction loss but slower switching; less suitable for >1 MHz designs | Prefer when thermal budget dominates over switching frequency constraints. |
| AO3400 | Higher RDS(ON) (42 mΩ @ 10V), lower Qg (8.2 nC), identical pinout | Reduced gate drive demand but higher I²R loss at high current; wider availability | Choose when cost sensitivity outweighs 15–20% conduction loss penalty in low-duty-cycle loads. |
Compared with DMN3025L-7 and AO3400, the DMN3032L-7 delivers optimal trade-off between RDS(ON) and Qg for 500 kHz–1 MHz DC-DC converters where both conduction and switching losses must be minimized within SOT23 area limits.
Availability
DMN3032L-7 is available at Aetrix Electronics and suitable for battery charging, portable DC-DC converters, and USB power delivery adaptors requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for DMN3032L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design, manufacturing, and distribution operations across Asia, the Americas, and Europe.
The DMN3032L belongs to Diodes' high-performance power MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in consumer and portable electronics.
FAQ
What is the maximum continuous drain current for DMN3032L-7 at +70°C ambient?
The DMN3032L-7 supports 4.3 A continuous drain current at TA = +70°C with device mounted on FR-4 PCB using minimum recommended pad layout (RθJA = 150 °C/W). This derating reflects thermal limitations under typical handheld device operating conditions, not package current-carrying capacity alone.
Can DMN3032L-7 be driven directly by a 3.3V microcontroller GPIO?
Yes - its gate threshold voltage range (1.0–2.0 V) and guaranteed RDS(ON) of 45 mΩ at VGS = 4.5V ensure full enhancement with 3.3V logic. However, gate drive strength must supply ≥10 nC total charge within required switching time; weak GPIOs may need buffering for >500 kHz operation.
Is DMN3032L-7 qualified for automotive applications?
No - DMN3032L-7 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN3032LQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Standard DMN3032L-7 is intended for commercial/industrial portable electronics only.
What is the safe operating area (SOA) limitation at DC operation?
At DC, the SOA is limited by RDS(ON) and maximum junction temperature (150°C). With RDS(ON) = 31 mΩ and TJ(max) = 150°C, the absolute DC current limit is ~4.3 A at TA = +25°C using the 93 °C/W thermal resistance condition - matching the datasheet's 1.3 W power dissipation rating.
DMN3032L-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 481 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN3032L-7 FAQ
1.How can I place an order for DMN3032L-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3032L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3032L-7 reliable?
The price and inventory of DMN3032L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032L-7 is usually 5 days.
3.What payment methods are accepted for DMN3032L-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032L-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3032L-7?
DMN3032L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3032L-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3032L-7?
For technical support, including DMN3032L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032L-7 requirements.
6.How does Aetrix verify that DMN3032L-7 is sourced from the original manufacturer or authorized distributors?
All DMN3032L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032L-7 meets industry standards.
7.What is the process for return or replacement of DMN3032L-7?
All DMN3032L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032L-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3032L-7 part is unused and in its original packaging.
Return procedure for DMN3032L-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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