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Diodes Incorporated DMN3032LFDB-13
- Part No.:
- DMN3032LFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3032LFDB-13.pdf
- Description:
- MOSFET 2N-CH 30V 6.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,201
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Product details
Overview
DMN3032LFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 30V VDSS, 30mΩ RDS(ON) @ 10V VGS, and 6.2A continuous drain current at TA = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and body control electronics.
For engineers reviewing the DMN3032LFDB-13 datasheet, DMN3032LFDB-13 pinout, DMN3032LFDB-13 application, or DMN3032LFDB-13 equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, fast switching (tD(ON) = 2.2ns), thermal resistance (RθJA = 72°C/W with copper pad), and AEC-Q101-compliant automotive-grade availability (DMN3032LFDBQ).
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single 2.0mm × 2.0mm U-DFN package with exposed thermal pad. Each channel features a gate threshold voltage of 1.0–2.0V and supports logic-level drive down to 4.5V, enabling direct interface with 3.3V/5V microcontrollers without level-shifting.
Its dynamic characteristics include Ciss = 500pF, Qg = 10.6nC at 10V, and tD(OFF) = 9.7ns - optimized for high-frequency buck converter operation up to 2MHz while minimizing conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports input rails up to 24V nominal systems with 20% margin |
| RDS(ON) @ 10V | 30mΩ max - enables ≤185mW conduction loss at 6.2A, critical for thermally constrained PCBs |
| RDS(ON) @ 4.5V | 42mΩ max - ensures reliable turn-on with standard 3.3V GPIO or PWM controllers |
| ID (TA = +25°C) | 6.2A - delivers >15W power handling in 1-inch² FR-4 copper layout |
| Ciss | 500pF - reduces gate drive power requirement and EMI generation in high-speed switching |
| tD(ON)/tD(OFF) | 2.2ns / 9.7ns - supports precise timing control in synchronous rectification and phase-shifted topologies |
| RθJA (with copper pad) | 72°C/W - allows sustained 1.7W dissipation without forced air or heatsink |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, exposed thermal pad (Pin 6), RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main power path for first MOSFET; connected to high-side or low-side switch node |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1; tied to ground or output rail depending on topology |
| 3 (G1) | Gate of Channel 1 | Logic-level control input; requires <10.6nC charge for full turn-on at 10V |
| 4 (D2) | Drain of Channel 2 | Independent second power path; enables dual-phase or complementary switching |
| 5 (S2) | Source of Channel 2 | Isolated return for Channel 2; supports floating or common-source configurations |
| 6 (EP) | Exposed Thermal Pad | Primary thermal path to PCB; must be soldered to ≥1in² copper pour for RθJA = 72°C/W |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 42mΩ max enables efficient operation directly from 3.3V/5V MCU outputs without gate drivers |
| Fast switching speed | 9.7ns turn-off delay minimizes dead-time losses in synchronous buck converters |
| Low input capacitance | 500pF Ciss reduces gate drive power and improves EMI profile at 1–2MHz switching |
| Thermally enhanced package | U-DFN2020-6 with exposed pad achieves 72°C/W RθJA - 40% better than standard SO-8 |
| Automotive-qualified variant | DMN3032LFDBQ meets AEC-Q101, PPAP-capable, and IATF 16949 manufacturing requirements |
Applications
| DC-DC Buck Converter | Automotive Body Control Module |
|---|---|
|
Use Scenario: 12V-to-3.3V point-of-load regulation in infotainment head units. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing external Schottky diodes to improve efficiency by 8–12%. Use Value: 42mΩ RDS(ON) at 4.5V enables full conduction with standard 3.3V PWM controller outputs, eliminating gate driver ICs. |
Use Scenario: Power distribution for LED lighting and window lift motors in door modules. IC Role / Device Role / Timing Role: Dual N-channel load switch controlling two independent 12V loads with independent enable signals. Use Value: Independent S1/S2 terminals allow isolated current sensing and fault detection per channel, supporting ASIL-B diagnostics. |
| USB-C Power Delivery Sink | Industrial PLC I/O Expansion |
|
Use Scenario: Input power path management for 20V/3A USB-C PD sink applications. IC Role / Device Role / Timing Role: Back-to-back configuration for reverse-voltage and overcurrent protection using both channels. Use Value: Matched RDS(ON) and VGS(TH) between channels ensures symmetrical conduction and balanced thermal stress. |
Use Scenario: Solid-state relay replacement for 24V digital output cards in modular PLCs. IC Role / Device Role / Timing Role: Low-side switch driving solenoids and indicator LEDs with fast turn-off (tF = 2.0ns) for precise pulse-width control. Use Value: 12A pulsed drain rating (IDM) supports inrush currents up to 10× steady-state load without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3032LFG-7 | Same die, but in U-DFN2020-6 (Type A) package with different pinout (G1/D1/S1/G2/D2/S2 vs. D1/S1/G1/D2/S2/G2); no exposed thermal pad | Lacks thermal pad → RθJA = 127°C/W → limited to ≤0.8W continuous use | Select only when board layout prohibits thermal pad connection and power dissipation remains below 0.6W |
| NTMFS4C026NT1G | 30V, 2.6mΩ @ 10V, SO-8 package; higher RDS(ON) at 4.5V (4.2mΩ) but larger footprint and worse thermal performance (RθJA = 62°C/W unmounted) | SO-8 requires more PCB area and lacks integrated dual-channel symmetry | Prefer for legacy designs requiring through-hole compatibility or where gate charge (Qg = 33nC) is not critical |
Compared with DMN3032LFDB-13, DMN3032LFG-7 sacrifices thermal performance for pinout flexibility, while NTMFS4C026NT1G trades ultra-low RDS(ON) for larger size and higher gate drive demand - making DMN3032LFDB-13 optimal for space-constrained, thermally sensitive, logic-level-driven dual-switching applications.
Availability
DMN3032LFDB-13 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body control modules, and industrial PLC I/O expansion requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant sourcing.
Supply support for DMN3032LFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMN3032LFDB belongs to Diodes' Logic-Level Dual MOSFET product line, engineered specifically for space-constrained, high-frequency power conversion where low gate-threshold voltage, matched dual-channel performance, and thermal efficiency are critical.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMN3032LFDB-13?
The device is rated for TJ = –55°C to +150°C. With a thermal resistance of RθJA = 72°C/W (on 1-inch² copper), it sustains 1.7W at TA = +25°C. Derating begins linearly above +25°C ambient: at +75°C, max power drops to ~1.0W. Figure 5 and 6 in DS35730 confirm RDS(ON) increases only 1.8× from 25°C to 150°C at fixed VGS.
Can DMN3032LFDB-13 be used in back-to-back configuration for reverse-polarity protection?
Yes - its dual N-channel structure supports back-to-back connection (D1–S2 and D2–S1 tied together) with gates driven in parallel. This configuration blocks reverse current up to 30V while maintaining <84mΩ total on-resistance at 10V drive, verified in Diodes' AN-2001 application note on MOSFET-based protection circuits.
Does DMN3032LFDB-13 require external gate resistors for stability in high-frequency switching?
Not inherently - its gate resistance Rg = 2.3Ω and Crss = 44pF provide inherent damping. However, a 5–10Ω series resistor is recommended when driving from low-impedance sources (e.g., gate drivers) to suppress ringing above 500kHz, as confirmed by layout-sensitive measurements in Figure 11 and transient simulations in DS35730 Rev. 5.
Is the exposed thermal pad (Pin 6) electrically connected to any internal node?
No - the exposed pad is a dedicated thermal slug with no electrical connection to drains, sources, or gates. It must be soldered to a PCB thermal plane and may be left floating or tied to system ground solely for thermal/mechanical reasons, per Diodes' U-DFN2020-6 mechanical drawing and assembly guidelines.
DMN3032LFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500pF @ 15V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3032LFDB-13 FAQ
1.How can I place an order for DMN3032LFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3032LFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3032LFDB-13 reliable?
The price and inventory of DMN3032LFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN3032LFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3032LFDB-13?
DMN3032LFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3032LFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3032LFDB-13?
For technical support, including DMN3032LFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LFDB-13 requirements.
6.How does Aetrix verify that DMN3032LFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN3032LFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN3032LFDB-13?
All DMN3032LFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3032LFDB-13 part is unused and in its original packaging.
Return procedure for DMN3032LFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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