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Diodes Incorporated DMN3032LFDB-7
- Part No.:
- DMN3032LFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3032LFDB-7.pdf
- Description:
- MOSFET 2N-CH 30V 6.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,097
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Product details
Overview
DMN3032LFDB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 30V VDSS, 30mΩ RDS(ON) @ VGS = 10V, and 6.2A continuous drain current at TA = +25°C. It delivers low conduction loss and fast switching for compact DC-DC converters and body control electronics.
For engineers reviewing the DMN3032LFDB-7 datasheet, DMN3032LFDB-7 pinout, DMN3032LFDB-7 application, or DMN3032LFDB-7 equivalent, key selection criteria include its dual-channel layout, 4.5V gate drive compatibility, thermal resistance of 72°C/W (with copper pad), and AEC-Q101 readiness via automotive-grade variant DMN3032LFDBQ.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has separate source, gate, and drain terminals. Its low RDS(ON) at 4.5V (42mΩ) enables efficient operation in 5V logic-driven power stages, while Ciss = 500pF and Qg = 5.0nC (at 4.5V) support high-frequency switching up to several MHz.
The device uses a trench-gate process optimized for RDS(ON)/Qg trade-off, with guaranteed VGS(TH) between 1.0V and 2.0V and normalized RDS(ON) drift ≤1.8× over –55°C to +150°C. Thermal design relies on its 9°C/W RθJC and exposed thermal pad tied to PCB ground plane.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage per channel; suitable for 24V rail and 12V automotive systems. |
| RDS(ON) @ VGS = 10V | 30mΩ - Enables <185mW conduction loss at 6.2A; supports high-efficiency synchronous rectification. |
| RDS(ON) @ VGS = 4.5V | 42mΩ - Ensures full enhancement with standard 5V logic or PWM controllers without level-shifting. |
| Qg @ VGS = 4.5V | 5.0nC - Low gate charge reduces driver power and switching transition time in high-frequency DC-DC topologies. |
| Ciss | 500pF - Limits Miller-induced shoot-through risk and eases gate driver sizing for 1–2MHz operation. |
| TJ Range | –55°C to +150°C - Validated junction temperature range supports under-hood automotive and industrial ambient conditions. |
| PD (with 1″² Cu) | 1.7W - Delivers ~2.3A continuous current at 70°C ambient with 72°C/W thermal resistance. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, thermally enhanced with exposed die-pad (Pin 6). Molded green compound, NiPdAu-plated terminals, JEDEC-compliant moisture sensitivity Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to load or input rail. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; ties to ground or floating return; forms half-bridge low-side reference. |
| 3 (G1) | Gate of Channel 1 | Control input for Channel 1; requires 1.0–2.0V threshold; driven by dedicated gate driver or MCU GPIO. |
| 4 (D2) | Drain of Channel 2 | Independent high-side/low-side node; no internal connection to D1; enables dual-switch or phase-split configurations. |
| 5 (S2) | Source of Channel 2 | Separate return path for Channel 2; allows independent current sensing or floating-source topology implementation. |
| 6 (G2) | Gate of Channel 2 | Independent control terminal; identical threshold and drive requirements as G1; supports asynchronous or complementary drive. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel structure | Enables two discrete switching functions in one footprint-e.g., half-bridge leg or dual load switches-without shared source/drain constraints. |
| Low RDS(ON) at 4.5V | 42mΩ ensures <220mW conduction loss at 5.2A, reducing thermal burden in space-constrained 5V-input buck converters. |
| Low Ciss and Qg | 500pF input capacitance and 5.0nC total gate charge minimize driver losses and enable clean 2MHz+ switching transitions. |
| Thermally optimized U-DFN2020-6 | Exposed thermal pad (Pin 6) and 9°C/W RθJC allow direct heat transfer to PCB ground plane, improving power density. |
| AEC-Q101 qualified variant available | DMN3032LFDBQ meets automotive stress testing (HTOL, TC, HTRB) and is PPAP-capable for body control module applications. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Driving LED lighting zones and small solenoids in door modules and interior lighting clusters. IC Role / Device Role / Timing Role: Dual low-side switch controlling two independent 12V loads with independent enable timing. Use Value: 42mΩ RDS(ON) at 4.5V eliminates need for gate drivers; dual-channel layout saves 33% board area vs. discrete MOSFETs. |
Use Scenario: Bidirectional VBUS path switching in USB-C PD 3.0 sink applications requiring reverse-current blocking. IC Role / Device Role / Timing Role: Dual N-channel configured as back-to-back switches to block reverse conduction while minimizing forward drop. Use Value: Matched RDS(ON) channels ensure symmetrical on-resistance (<42mΩ each), limiting forward voltage to <210mV at 5A. |
| Industrial DC-DC Synchronous Rectifier | Portable Device Load Switch |
|
Use Scenario: Secondary-side synchronous rectification in isolated 5V/3.3V flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: Dual-channel used in parallel per output to halve effective RDS(ON) and reduce thermal stress. Use Value: Parallel configuration achieves ~21mΩ effective on-resistance, cutting conduction loss by 50% versus single-device solution. |
Use Scenario: Controlled power-up sequencing for PMIC rails and sensor subsystems in handheld medical monitors. IC Role / Device Role / Timing Role: Independent channel enable for staggered turn-on of 3.3V and 1.8V domains using separate GPIO controls. Use Value: Independent gates eliminate cross-talk risk; 1.0–2.0V VGS(TH) ensures reliable turn-on with 1.8V logic outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LFD-7 | Single-channel, same U-DFN2020-6 package, 29mΩ @ 10V, higher ID (6.8A), but lacks second channel. | Requires two devices for dual-function use; increases layout area and BOM count. | Select when only one switch is needed and lower RDS(ON) is prioritized over integration. |
| NTMFS4C08NT1G | Single N-channel, SO-8 package, 3.2mΩ @ 10V, 100A rating-but larger footprint and higher gate charge (34nC). | Not pin-compatible; unsuitable for space-constrained designs; better for high-current single-switch roles. | Choose for high-power single-channel applications where thermal mass and current handling outweigh size constraints. |
Compared with DMN3032LFDB-7, DMN3029LFD-7 offers marginally lower RDS(ON) but sacrifices dual-channel integration, while NTMFS4C08NT1G trades miniaturization for raw current capacity-making DMN3032LFDB-7 optimal for compact dual-switch power management where board area and gate drive simplicity are critical.
Availability
DMN3032LFDB-7 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and industrial DC-DC synchronous rectifiers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3032LFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
The DMN3032LFDB belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power switching in automotive, industrial, and portable electronics-emphasizing low RDS(ON), fast switching, and robust thermal performance in ultra-small packages.
FAQ
Is DMN3032LFDB-7 suitable for automotive applications?
Yes-the DMN3032LFDB-7 itself is not AEC-Q101 qualified, but its automotive-grade counterpart DMN3032LFDBQ is fully qualified to AEC-Q101, manufactured in IATF 16949-certified facilities, and PPAP-capable. Engineers targeting automotive body control or infotainment power stages should specify the Q-suffix variant for compliance-critical designs.
What is the recommended PCB layout for thermal performance?
Use the manufacturer-recommended U-DFN2020-6 Type B pad layout with a solid 1-inch² copper pour connected to Pin 6 (exposed thermal pad) via ≥4 thermal vias (0.3mm diameter, filled or plated). Maintain minimum 0.25mm solder mask opening around the pad and avoid routing traces under the package to maximize heat dissipation.
Can both channels be paralleled for higher current handling?
Yes-both channels are electrically isolated and matched in RDS(ON) and threshold voltage. When paralleled with balanced gate drive and symmetric PCB routing, they deliver ~4.6A continuous per channel at +75°C ambient (based on 1.7W PD derating), effectively doubling current capability while maintaining thermal symmetry.
Does DMN3032LFDB-7 require a gate resistor for EMI control?
A gate resistor (typically 2.2–10Ω) is recommended to dampen ringing caused by Lg–Ciss resonance during fast switching. The device's low Rg (2.3Ω) and 500pF Ciss make it susceptible to oscillation with strong drivers; adding series resistance improves EMI profile and reduces gate overshoot without significantly impacting tr/tf.
DMN3032LFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500pF @ 15V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3032LFDB-7 FAQ
1.How can I place an order for DMN3032LFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3032LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3032LFDB-7 reliable?
The price and inventory of DMN3032LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN3032LFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3032LFDB-7?
DMN3032LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3032LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3032LFDB-7?
For technical support, including DMN3032LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LFDB-7 requirements.
6.How does Aetrix verify that DMN3032LFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN3032LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN3032LFDB-7?
All DMN3032LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3032LFDB-7 part is unused and in its original packaging.
Return procedure for DMN3032LFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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