Diodes Incorporated DMN3032LFDBQ-7
- Part No.:
- DMN3032LFDBQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3032LFDBQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 6.2A 6UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:98,939
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Product details
Overview
DMN3032LFDBQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, rated for 30V VDS, 30mΩ RDS(ON) @ 10V VGS, and 6.2A continuous drain current at +25°C - designed for automotive body control electronics and DC-DC converters requiring AEC-Q101 qualification.
For engineers reviewing the DMN3032LFDBQ-7 datasheet, DMN3032LFDBQ-7 pinout, DMN3032LFDBQ-7 application, or DMN3032LFDBQ-7 equivalent, key selection criteria include low gate charge (10.6nC @ 10V), 100% unclamped inductive switching capability, thermal resistance of 72°C/W (with enhanced pad layout), and dual-channel integration in a 2.0×2.0mm footprint.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single compact U-DFN2020-6 package with shared thermal path and independent gate terminals. Its 30V breakdown voltage and 42mΩ RDS(ON) @ 4.5V VGS support 12V automotive rail switching and synchronous rectification in buck converters.
The device features low total gate charge (5.0nC @ 4.5V, 10.6nC @ 10V), fast switching times (tD(ON) = 2.2ns, tF = 2.0ns), and robust avalanche rating (12A IAS, 10mJ EAS) - enabling high-efficiency, space-constrained power management in PPAP-capable automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30V - supports 12V automotive systems with margin for load dump transients |
| RDS(ON) @ 10V | 30mΩ - enables ≤185mW conduction loss at 6.2A, critical for thermally constrained PCBs |
| RDS(ON) @ 4.5V | 42mΩ - ensures reliable operation with 3.3V/5V logic-level gate drive in low-voltage control circuits |
| Qg @ 10V | 10.6nC - reduces gate driver power demand and switching transition time in high-frequency DC-DC stages |
| Avalanche Energy | 10mJ - withstands repetitive inductive turn-off stress without derating in motor driver or solenoid interfaces |
| TJ Range | –55°C to +150°C - meets under-hood temperature requirements per AEC-Q101 Grade 1 |
| Thermal RθJA | 72°C/W (with 1-inch² copper) - enables 1.7W continuous dissipation in automotive ambient conditions |
Pinout & Package
Package: U-DFN2020-6 - 2.0mm × 2.0mm × 0.6mm profile, exposed thermal pad, NiPdAu-plated terminals, JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-current output node; electrically connected to exposed thermal pad for optimal heat transfer |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or low-side return path in half-bridge configurations |
| G1 | Gate of Channel 1 | CMOS-compatible control input; requires <2.0V threshold margin for reliable turn-on at 4.5V drive |
| D2 | Drain of Channel 2 | Independent high-current output; enables dual-switch topologies without cross-coupling |
| S2 | Source of Channel 2 | Isolated return path for Channel 2; supports floating or common-source configurations |
| G2 | Gate of Channel 2 | Separate control terminal; allows asynchronous or complementary switching with dedicated gate drivers |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated to 12A/10mJ - eliminates need for external snubbers in relay replacement and solenoid drive |
| Low Gate Charge | 5.0nC @ 4.5V - cuts gate driver losses by >40% vs. comparable 30V dual MOSFETs, improving efficiency at 500kHz+ |
| AEC-Q101 Qualified | PPAP-capable with full automotive reliability testing - enables direct use in production body control modules without requalification |
| Green, Halogen-Free Construction | <900ppm Br+Cl, <1000ppm Sb - satisfies EU ELV and OEM chemical compliance mandates for Tier 1 automotive supply chains |
| U-DFN2020-6 Footprint | 2.0×2.0mm area - saves >65% board space vs. SO-8 dual MOSFETs while maintaining thermal performance via bottom-side thermal pad |
Applications
| Body Control Module (BCM) | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: Driving door lock actuators, mirror heaters, and interior lighting loads in modern vehicle BCMs. IC Role / Device Role / Timing Role: Dual low-side switch replacing mechanical relays; channels operate independently with separate gate control. Use Value: Eliminates relay coil power draw and contact wear; 42mΩ RDS(ON) @ 4.5V ensures full 5A load capability with microcontroller GPIO drive. |
Use Scenario: Synchronous rectification in 12V-to-5V/3.3V buck converters powering ADAS sensors and infotainment subsystems. IC Role / Device Role / Timing Role: Dual N-channel power stage - one channel as high-side switch, second as low-side synchronous rectifier. Use Value: 30mΩ RDS(ON) @ 10V reduces conduction loss by 35% vs. Schottky diode solution; 2.2ns turn-on delay supports >1MHz switching. |
| LED Headlamp Driver | Power Distribution Unit (PDU) |
|
Use Scenario: PWM dimming and overcurrent protection for adaptive LED headlamps with dynamic beam shaping. IC Role / Device Role / Timing Role: Dual-channel current sink - one channel controls main beam, second manages DRL or position lamp strings. Use Value: Matched RDS(ON) tracking between channels ensures consistent current sharing; 150°C TJ rating survives under-hood thermal cycling. |
Use Scenario: Solid-state replacement for fuses and relays in centralized vehicle power distribution units. IC Role / Device Role / Timing Role: Dual protected switch - each channel includes integrated current sensing and thermal shutdown feedback. Use Value: 100% UIS rating handles inrush currents during hot-plug events; 72°C/W RθJA enables 2×6.2A parallel operation on standard FR-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LFD-7 | Single-channel 30V MOSFET (30mΩ @ 10V, 6.8A); same U-DFN2020-6 package but no dual configuration | Requires two devices for dual-switch functions; increases layout area and gate drive complexity | Select when only one switch is needed or when channel isolation is not required |
| NTMFS4C02NT1G | 30V dual N-MOSFET (2.8mΩ @ 10V, 100A pulsed) in Power56 package; higher RDS(ON) tempco and larger 5.0×6.0mm footprint | Better for high-current (>15A) applications but incompatible with space-constrained U-DFN2020 layouts | Select for industrial DC-DC where thermal mass outweighs size constraints; not drop-in for automotive BCMs |
Compared with DMN3029LFD-7, DMN3032LFDBQ-7 delivers true dual-channel integration in identical footprint - reducing component count and routing complexity. Versus NTMFS4C02NT1G, it trades peak current capability for 65% smaller area and superior thermal response in thin-profile automotive modules.
Availability
DMN3032LFDBQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, DC-DC converters, LED headlamp drivers, and power distribution units requiring stable component supply across extended temperature ranges and AEC-Q101 compliance.
Supply support for DMN3032LFDBQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN3032LFDBQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space- and thermally constrained power switching in body electronics and distributed power architectures.
FAQ
Is DMN3032LFDBQ-7 qualified for automotive use?
Yes - DMN3032LFDBQ-7 is fully AEC-Q101 qualified and PPAP-capable, with test documentation covering HTOL, TC, UHAST, and ESD per JESD22 standards. It operates from –55°C to +150°C junction temperature and is certified for under-hood applications including body control modules and lighting systems.
What is the recommended PCB layout for thermal performance?
For optimal thermal performance, use the recommended 1-inch² copper pad per Diodes AP02001, connecting the exposed thermal pad directly to internal ground planes via ≥4 thermal vias (0.3mm diameter, filled). Maintain minimum 0.2mm solder mask opening around the pad to ensure full solder wetting and thermal transfer.
Can DMN3032LFDBQ-7 be used in synchronous rectification?
Yes - its 30mΩ RDS(ON) @ 10V and 42mΩ @ 4.5V, combined with 10.6nC total gate charge and 2.2ns turn-on delay, make it suitable for synchronous rectification in 300kHz–1MHz buck converters. The dual-channel architecture allows independent control of high-side and low-side switches in half-bridge topologies.
Does DMN3032LFDBQ-7 require external gate resistors?
Gate resistors are recommended for EMI control and oscillation suppression: 5–10Ω series resistance per gate is typical for 4.5V–10V drive. The device's 2.3Ω intrinsic gate resistance and low Crss (44pF) reduce ringing risk, but layout-dependent parasitics may necessitate tuning for specific switching frequencies above 500kHz.
DMN3032LFDBQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500pF @ 15V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3032LFDBQ-7 FAQ
1.How can I place an order for DMN3032LFDBQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3032LFDBQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3032LFDBQ-7 reliable?
The price and inventory of DMN3032LFDBQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LFDBQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3032LFDBQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LFDBQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3032LFDBQ-7?
DMN3032LFDBQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3032LFDBQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3032LFDBQ-7?
For technical support, including DMN3032LFDBQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LFDBQ-7 requirements.
6.How does Aetrix verify that DMN3032LFDBQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3032LFDBQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LFDBQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3032LFDBQ-7?
All DMN3032LFDBQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LFDBQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3032LFDBQ-7 part is unused and in its original packaging.
Return procedure for DMN3032LFDBQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3032LFDBQ-7 Tags

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