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Diodes Incorporated DMN3032LFDBWQ-13

Part No.:
DMN3032LFDBWQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMN3032LFDBWQ-13.pdf
Description:
MOSFET 2N-CH 30V 5.5A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,389

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Product details

Overview

DMN3032LFDBWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, with 30V VDSS, 30mΩ RDS(ON) @ 10VGS, and 5.5A ID at +25°C - deployed in body control modules and DC-DC converters requiring robust unclamped inductive switching capability.

For engineers reviewing the DMN3032LFDBWQ-13 datasheet, DMN3032LFDBWQ-13 pinout, DMN3032LFDBWQ-13 application, or DMN3032LFDBWQ-13 equivalent, this page delivers verified package mapping (U-DFN2020-6), validated thermal resistance (91°C/W with 1-inch copper pad), confirmed gate charge (10.6 nC @ 10VGS), and AEC-Q101 qualification status for automotive power management design.

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single U-DFN2020-6 (SWP) package with sidewall plating for optical inspection. Its low 30mΩ on-resistance at 10VGS and 42mΩ at 4.5VGS enables efficient 12V automotive rail switching under constrained thermal budgets.

The device supports high-reliability operation across –55°C to +150°C junction temperature range and delivers 7.7 mJ avalanche energy (L = 0.1 mH), meeting stringent PPAP requirements for body electronics and power management functions in IATF 16949-certified facilities.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum drain-source blocking voltage compatible with 12V automotive systems with margin.
RDS(ON)30 mΩ @ 10VGS - Enables ≤165 mW conduction loss at 5.5A, critical for thermally limited U-DFN2020-6 footprint.
ID (max)5.5 A @ +25°C - Sustains continuous current in compact body control load switches without external heatsinking.
Qg10.6 nC @ 10VGS - Reduces gate drive power and switching transition time in 200–500 kHz DC-DC controllers.
EAS7.7 mJ - Withstands repetitive inductive turn-off stress in motor driver and solenoid control without derating.
RθJA91 °C/W - Achieved with 1-inch² copper pad; defines maximum power dissipation (1.37 W) in production PCB layouts.
VGS(TH)1.0–2.0 V - Ensures reliable turn-on with standard 3.3V/5V logic-level gate drivers in automotive microcontrollers.

Pinout & Package

Package: U-DFN2020-6 (SWP) Type B - 2.0 mm × 2.0 mm × 0.6 mm low-profile, lead-free, halogen-free molded plastic package with matte tin-plated copper leadframe and sidewall plating for automated optical inspection.

Pin/TerminalCircuit RoleDesign Meaning
D1, D2Drain terminals (Channel 1 & 2)High-current output nodes tied to power rail; electrically isolated but thermally coupled in shared die substrate.
S1, S2Source terminals (Channel 1 & 2)Return paths for respective channels; require separate Kelvin sensing or common-source configuration per layout.
G1, G2Gate terminals (Channel 1 & 2)Independent control inputs enabling synchronous/asynchronous dual-switching; no internal gate coupling.

Key Features

FeatureDesign Value
100% Unclamped Inductive Switching (UIS)Validated 12 A IAS and 7.7 mJ EAS ensure field reliability in solenoid and motor gate drive without snubbers.
Low RDS(ON) at 4.5VGS42 mΩ enables direct drive from 5V microcontroller GPIOs in body control units without level-shifting.
Small Form Factor2.0 mm × 2.0 mm footprint increases board density in space-constrained automotive ECUs and lighting modules.
Sidewall Plated TerminalsEnables AOI detection of solder joint integrity on bottom-surface-mounted leads - critical for zero-defect automotive manufacturing.

Applications

Body Control Module (BCM)Automotive DC-DC Converter

Use Scenario: Driving door lock actuators, mirror heaters, and interior lighting loads in 12V vehicle networks.

IC Role / Device Role / Timing Role: Dual N-channel power switch providing independent load control with integrated body diode reverse recovery.

Use Value: 30mΩ RDS(ON) minimizes resistive heating during sustained 4–5A actuator duty cycles, extending module lifetime.

Use Scenario: High-side synchronous rectification in 12V-to-5V/3.3V buck converters for infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck topology, operating at 300–500 kHz with fast 2.6 ns rise time.

Use Value: 10.6 nC total gate charge reduces driver IC power consumption and improves converter efficiency by >1.2% at full load.

Power Distribution Unit (PDU)LED Headlamp Driver

Use Scenario: Solid-state replacement for mechanical relays in centralized 12V power distribution across chassis domains.

IC Role / Device Role / Timing Role: Dual-channel protected load switch managing fused branch circuits with overcurrent and thermal shutdown.

Use Value: AEC-Q101 qualification and 150°C max TJ rating support continuous operation in under-hood PDU enclosures.

Use Scenario: PWM-controlled current sink for adaptive front-lighting system (AFS) matrix LED arrays.

IC Role / Device Role / Timing Role: Fast-switching current path modulator enabling precise 100–1000 Hz dimming with minimal thermal drift.

Use Value: On-resistance variation <±10% from –40°C to +125°C ensures stable LED current regulation across ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3032LSDWQ-13Same die, different package: U-DFN2020-6 (SWP) Type A - lacks sidewall plating, no AOI support.Not suitable for zero-defect automotive manufacturing lines requiring automated optical inspection.Select only if AOI is not required and cost sensitivity outweighs process traceability needs.
NTMFS4C023NT1GHigher RDS(ON) (3.2 mΩ @ 10VGS but single-channel); larger SO-8 package; 30V rating.Requires two devices for dual-channel function; incompatible footprint; higher board area and thermal resistance.Use only when discrete channel isolation or legacy SO-8 layout compatibility is mandatory.

Compared with DMN3032LFDBWQ-13, DMN3032LSDWQ-13 sacrifices AOI capability for marginal cost reduction, while NTMFS4C023NT1G trades integration density and thermal performance for legacy package familiarity - making the original part optimal for new AEC-Q101-compliant designs prioritizing miniaturization and process control.

Availability

DMN3032LFDBWQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, DC-DC converters, and power distribution units requiring stable component supply with full AEC-Q101 qualification and PPAP documentation support.

Supply support for DMN3032LFDBWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN3032LFDBWQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding power switching in body electronics and distributed power systems.

FAQ

Is DMN3032LFDBWQ-13 qualified for automotive applications?

Yes. The DMN3032LFDBWQ-13 is fully AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and supported by PPAP documentation. It meets automotive-grade requirements for temperature cycling (–55°C to +150°C), humidity, and mechanical shock, with 100% UIS testing performed per JEDEC JESD22-A109.

What is the thermal resistance of DMN3032LFDBWQ-13 on a standard PCB?

With a 1-inch² copper pad (2 oz), RθJA is 91°C/W. On a minimal FR-4 board (2 oz, recommended pad layout only), it rises to 153°C/W. Junction-to-case resistance is 30°C/W, enabling accurate thermal modeling when mounted to metal-core substrates or heat spreaders.

Can DMN3032LFDBWQ-13 be driven directly by a 3.3V microcontroller?

No - its VGS(TH) range is 1.0–2.0 V, but RDS(ON) degrades significantly below 4.5VGS (42 mΩ vs. 30 mΩ). For reliable 5.5A operation, ≥4.5V gate drive is required; a 3.3V MCU must use a gate driver or level shifter to achieve full performance.

Does DMN3032LFDBWQ-13 include integrated ESD protection?

No. The device has no built-in ESD protection circuitry beyond inherent MOSFET gate oxide robustness (±20V VGS rating). External TVS diodes or RC filters are recommended on gate traces in high-noise automotive environments to prevent latch-up or gate oxide damage during assembly or field operation.

DMN3032LFDBWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Rds On (Max) @ Id, Vgs:
30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 15V
Power - Max:
820mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (SWP) Type B

DMN3032LFDBWQ-13 FAQ

1.How can I place an order for DMN3032LFDBWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3032LFDBWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3032LFDBWQ-13 reliable?

The price and inventory of DMN3032LFDBWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LFDBWQ-13 is usually 5 days.

3.What payment methods are accepted for DMN3032LFDBWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LFDBWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3032LFDBWQ-13?

DMN3032LFDBWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3032LFDBWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3032LFDBWQ-13?

For technical support, including DMN3032LFDBWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LFDBWQ-13 requirements.

6.How does Aetrix verify that DMN3032LFDBWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN3032LFDBWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LFDBWQ-13 meets industry standards.

7.What is the process for return or replacement of DMN3032LFDBWQ-13?

All DMN3032LFDBWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LFDBWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3032LFDBWQ-13 part is unused and in its original packaging.

Return procedure for DMN3032LFDBWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3032LFDBWQ-13 Tags

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