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Diodes Incorporated DMN3032LFDBWQ-7
- Part No.:
- DMN3032LFDBWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3032LFDBWQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 5.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,471
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Product details
Overview
DMN3032LFDBWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101, rated for 30V VDSS, 30mΩ RDS(ON) @ 10V VGS, and 5.5A ID at +25°C - designed for automotive body control electronics and DC-DC converters requiring robust unclamped inductive switching capability.
For engineers reviewing the DMN3032LFDBWQ-7 datasheet, DMN3032LFDBWQ-7 pinout, DMN3032LFDBWQ-7 application, or DMN3032LFDBWQ-7 equivalent, this part supports high-density power management in space-constrained automotive modules where low gate charge (10.6nC @ 10V), thermally efficient U-DFN2020-6 packaging, and AEC-Q101 compliance are mandatory selection criteria.
Technical Context
This dual N-channel MOSFET integrates two identical silicon die in a single U-DFN2020-6 (SWP Type B) package with sidewall plating for optical inspection. Each channel features a 30V breakdown voltage, 1.0–2.0V gate threshold, and exhibits 42mΩ RDS(ON) at 4.5V VGS - enabling 4.7A continuous operation under typical 5V logic drive conditions.
Thermal performance is defined by RθJA = 91°C/W (with 1-inch2 copper pad) and RθJC = 30°C/W, supporting operation from –55°C to +150°C junction temperature. Its 100% UIS-rated avalanche energy (EAS = 7.7mJ, L = 0.1mH) ensures reliability in inductive load switching common in automotive solenoid and motor control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage compatible with 24V automotive systems and 12V battery rails. |
| RDS(ON) @ 10V | 30mΩ - Low conduction loss enabling ≤1.7W I²R dissipation at 5.5A, critical for thermal management in sealed ECUs. |
| RDS(ON) @ 4.5V | 42mΩ - Ensures functional switching under degraded 5V supply or logic-level drive without external level shifters. |
| Qg @ 10V | 10.6nC - Reduces gate driver power demand and switching transition time in high-frequency DC-DC topologies. |
| ID (TA = +25°C) | 5.5A - Continuous current rating sufficient for driving medium-power loads such as LED matrix drivers or small BLDC gate drivers. |
| EAS | 7.7mJ - Confirmed avalanche energy rating allows safe operation during inductive turn-off transients without snubbers. |
| TJ Range | –55°C to +150°C - Full specification across automotive under-hood temperature extremes per AEC-Q101 stress testing. |
Pinout & Package
Package: U-DFN2020-6 (SWP Type B), 2.0mm × 2.0mm × 0.6mm profile with exposed thermal pad, matte tin-plated copper leadframe, and sidewall plating for automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain 1 / Drain 2 | High-current output terminals; internally isolated but share common source connection via substrate tie. |
| S1, S2 | Source 1 / Source 2 | Power return paths; electrically tied together at package level and connected to thermal pad for enhanced heat sinking. |
| G1, G2 | Gate 1 / Gate 2 | Independent control inputs; each requires dedicated gate resistor and driver path to prevent cross-talk in dual-switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated EAS = 7.7mJ enables direct replacement of mechanical relays in solenoid drivers without external protection components. |
| Low RDS(ON) @ 4.5V | 42mΩ supports 4.7A continuous current using standard 5V microcontroller GPIOs - eliminates need for gate driver ICs in cost-sensitive modules. |
| U-DFN2020-6 footprint | 2.0×2.0mm area saves >60% PCB space vs. SO-8 while maintaining comparable thermal resistance (RθJA = 91°C/W). |
| AEC-Q101 qualification & PPAP support | Manufactured in IATF 16949-certified facilities with full change control documentation - required for Tier-1 automotive BOM approval. |
Applications
| Body Control Module (BCM) | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: Driving door lock actuators and interior lighting loads in modern vehicle BCMs with space and thermal constraints. IC Role / Device Role: Dual N-channel switch providing independent high-side switching for two 12V resistive/inductive loads. Use Value: 100% UIS rating eliminates need for external flyback diodes; 42mΩ RDS(ON) @ 4.5V enables direct MCU GPIO control without level-shifting. |
Use Scenario: Synchronous rectification stage in 12V-to-5V/3.3V buck converters powering infotainment and ADAS subsystems. IC Role / Device Role: Low-side synchronous FET paired with external high-side controller to replace Schottky diode and reduce conduction losses. Use Value: 30mΩ RDS(ON) @ 10V cuts rectifier losses by >40% vs. 60mΩ alternatives, improving converter efficiency from 88% to 92% at 3A load. |
| Power Distribution Unit (PDU) | LED Headlamp Driver |
|
Use Scenario: Solid-state replacement for fuse-based branch protection in centralized automotive PDUs managing multiple 24V auxiliary loads. IC Role / Device Role: Dual-channel load switch with integrated current sensing and thermal shutdown for overcurrent and short-circuit protection. Use Value: RDS(ON) drift <±15% over –40°C to +125°C ensures stable trip thresholds; AEC-Q101 qualification guarantees field reliability. |
Use Scenario: Matrix-addressed LED headlamp dimming control where individual LED strings require fast, low-loss PWM switching. IC Role / Device Role: High-speed N-channel switch controlling current through LED string segments with minimal voltage drop. Use Value: 10.6nC total gate charge enables clean 2kHz PWM edges without shoot-through risk; 150°C TJ rating sustains operation near hot optics housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3032LSDWQ-7 | Same die, different package: SOT-26 instead of U-DFN2020-6; RθJA = 153°C/W (vs. 91°C/W); no sidewall plating. | Lower power density; suitable only for non-thermal-critical 12V loads below 2.5A; not recommended for under-hood use above 85°C ambient. | Select when legacy SMT placement equipment lacks U-DFN2020-6 capability or when board-level thermal design cannot accommodate exposed pad soldering. |
| NTMFS4C023NT1G | 30V, 2.3mΩ @ 10V, 29A rated; SO-8FL package; higher Qg (24nC); not AEC-Q101 qualified (only PPAP-capable). | Higher current capacity but larger footprint; lacks full AEC-Q101 certification - unsuitable for safety-critical or OEM-specified designs. | Choose only for non-OEM industrial DC-DC designs requiring >10A per channel and where qualification documentation is not mandated. |
Compared with DMN3032LSDWQ-7, the DMN3032LFDBWQ-7 delivers 40% lower thermal resistance and optical inspectability - essential for compact, high-reliability automotive modules. Against NTMFS4C023NT1G, it trades peak current for AEC-Q101 compliance and space savings, making it the only qualified option for production BCM and PDU applications.
Availability
DMN3032LFDBWQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, DC-DC converters, and power distribution units requiring stable component supply with full AEC-Q101 traceability and PPAP documentation support.
Supply support for DMN3032LFDBWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN3032LFDBWQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding vehicle subsystems including body electronics and power conversion stages.
FAQ
Is DMN3032LFDBWQ-7 suitable for high-frequency PWM applications?
Yes - with 10.6nC total gate charge and 2.2ns turn-on delay, it supports clean switching up to 500kHz in synchronous buck converters. Its low Crss (44pF) minimizes Miller-induced shoot-through risk, and the U-DFN2020-6 package's low inductance enhances high-speed gate drive fidelity.
What is the maximum allowable PCB copper area for thermal performance?
For RθJA = 91°C/W, Diodes specifies a 1-inch² (645mm²) 2oz copper pad connected to the exposed thermal pad. Smaller pads increase thermal resistance linearly - e.g., 0.5-inch² raises RθJA to ~120°C/W, limiting max continuous current to ~3.8A at +75°C ambient.
Does DMN3032LFDBWQ-7 include integrated ESD protection?
No - it does not integrate on-die ESD protection beyond standard HBM 2kV (per AEC-Q101). External TVS diodes are required for ISO 10605-compliant 15kV contact discharge protection in automotive harness interfaces, especially when gates connect to long traces or connectors.
Can both channels be paralleled for higher current handling?
No - the device is not characterized for parallel operation. Channel-to-channel parameter matching (e.g., VGS(th) tolerance ±0.5V) and thermal coupling in the shared package create imbalance risks. For >5.5A, use separate discrete MOSFETs with matched RDS(ON) and independent thermal paths.
DMN3032LFDBWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500pF @ 15V
- Power - Max:
- 820mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (SWP) Type B
DMN3032LFDBWQ-7 FAQ
1.How can I place an order for DMN3032LFDBWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3032LFDBWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3032LFDBWQ-7 reliable?
The price and inventory of DMN3032LFDBWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LFDBWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3032LFDBWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LFDBWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3032LFDBWQ-7?
DMN3032LFDBWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3032LFDBWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3032LFDBWQ-7?
For technical support, including DMN3032LFDBWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LFDBWQ-7 requirements.
6.How does Aetrix verify that DMN3032LFDBWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3032LFDBWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LFDBWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3032LFDBWQ-7?
All DMN3032LFDBWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LFDBWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3032LFDBWQ-7 part is unused and in its original packaging.
Return procedure for DMN3032LFDBWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3032LFDBWQ-7 Tags
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