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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3032LQ-13

Name: DMN3032LQ-13
Brand: Diodes Incorporated
SKU: DMN3032LQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3032LQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3032LQ-13.pdf

Description:: MOSFET BVDSS: 8V~24V SOT23 T&R 1

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Product details

Overview

DMN3032LQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 31 mΩ R_DS(ON) @ 10V V_GS, and 5.4A continuous drain current at +25°C. It serves as a high-efficiency power switch in automotive backlighting and DC-DC converter stages.

For engineers reviewing the DMN3032LQ datasheet, DMN3032LQ pinout, DMN3032LQ application, or DMN3032LQ equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at 4.5V gate drive, fast switching (t_F = 13.4 ns), thermal resistance of 93°C/W under recommended layout, and IATF 16949 manufacturing compliance.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 1.0–2.0 V, enabling reliable turn-on from standard 3.3V and 5V logic. Its low input capacitance (C_iss = 481 pF) and gate charge (Q_g = 10.1 nC @ 10V) support high-frequency switching up to several hundred kHz in synchronous buck converters.

The device features integrated body diode with V_SD = 0.7–1.0 V at 1A, and exhibits normalized R_DS(ON) drift of ≤1.5× over −55°C to +150°C junction range. Thermal performance is validated on FR-4 PCB with 2 oz copper and minimum pad layout per Diodes' recommended footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche conduction in power-switching nodes
R_DS(ON) @ 10V	31 mΩ max - Enables <160 mW conduction loss at 5.4A in compact SOT23 footprint
R_DS(ON) @ 4.5V	45 mΩ max - Supports direct drive from 3.3V/5V microcontrollers without level-shifting
Q_g @ 10V	10.1 nC - Determines gate driver current requirement for 100 ns switching transitions
t_F	13.4 ns - Limits switching energy loss during turn-off in high-frequency DC-DC stages
R_θJA (min layout)	93 °C/W - Sets maximum power dissipation limit of 1.3 W at +25°C ambient
AEC-Q101 Qualified	Yes - Validated for automotive use including temperature cycling, HTRB, and ESD testing

Pinout & Package

Package: SOT23 - Surface-mount plastic package with matte tin-annealed terminals, UL 94V-0 rated molding compound, and moisture sensitivity level 1 (J-STD-020).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms common node with body diode cathode
2 (Gate)	Control electrode for channel formation	Receives logic-level drive; requires <10.1 nC charge for full enhancement
3 (Drain)	Main current output terminal	Connects to load or switching node; withstands up to 30V transient spikes

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	45 mΩ max enables efficient operation directly from 5V MCU GPIOs without gate drivers
Fast switching speed	t_F = 13.4 ns reduces switching losses in >200 kHz DC-DC converters
Low input capacitance	C_iss = 481 pF minimizes gate drive power and improves noise immunity
AEC-Q101 qualification	Validated for automotive underhood and cabin applications per stress test requirements
Green packaging	Halogen- and antimony-free, RoHS 3 compliant with <900 ppm Br/Cl and <1000 ppm Sb

Applications

Automotive LED Backlighting

USB-C Power Delivery Switch

Use Scenario: Driving white LED strings in instrument cluster and infotainment displays requiring PWM dimming at 1–20 kHz.

IC Role / Device Role: Low-side constant-current switch controlling LED cathode path.

Use Value: 45 mΩ R_DS(ON) @ 4.5V ensures <200 mW loss at 2A, minimizing thermal impact in sealed display modules.

Use Scenario: Load switching in USB-C PD sink applications where 5–20V input must be routed to Type-C port with reverse-voltage protection.

IC Role / Device Role: High-side or low-side power-path FET enabling/disabling VBUS connection.

Use Value: 30V rating and 1.0–2.0 V V_GS(TH) allow robust control from PD controller GPIOs across temperature.

Automotive DC-DC Converter

Body Control Module Load Switch

Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converters powering ADAS sensors and CAN transceivers.

IC Role / Device Role: Secondary-side switching element replacing Schottky diode to reduce conduction loss.

Use Value: 31 mΩ R_DS(ON) @ 10V cuts rectifier loss by >60% vs. 0.4V Schottky at 4A, improving efficiency by ~2.5%.

Use Scenario: Controlled power delivery to solenoids, relays, and small motors in door lock, window lift, and mirror adjustment circuits.

IC Role / Device Role: Protected load switch with built-in overcurrent and thermal foldback.

Use Value: AEC-Q101 qualification and 150°C T_J(max) ensure reliability in under-dash environments with ambient up to 105°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LQ-13	Lower R_DS(ON): 25 mΩ @ 10V; same SOT23 package and AEC-Q101 qualification	Better conduction efficiency at high current (>4A), but higher gate charge (12.5 nC)	Select when lower steady-state loss outweighs gate drive capability constraints
NTMFS4C06NT1G	Higher V_DSS: 60V; SO-8FL package; R_DS(ON) = 4.5 mΩ @ 10V	Supports higher bus voltages and higher current (12A), but larger footprint and no SOT23 drop-in fit	Select when system requires >30V tolerance or >5.4A continuous current

Compared with DMN3025LQ-13 and NTMFS4C06NT1G, the DMN3032LQ offers optimal balance of low gate charge (10.1 nC), 4.5V drivability, and AEC-Q101 compliance in the smallest possible footprint-making it preferred for space-constrained automotive modules where 30V operation suffices.

Availability

DMN3032LQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, USB-C power delivery switching, and body control module load switching requiring stable component supply and long-term production continuity.

Supply support for DMN3032LQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMN3032LQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for power management in harsh-environment vehicle subsystems including lighting, infotainment, and body electronics.

FAQ

Is DMN3032LQ-13 pin-compatible with standard SOT23-3 N-channel MOSFETs?

Yes, DMN3032LQ-13 uses the JEDEC-standard SOT23-3 outline with Drain (Pin 3), Gate (Pin 2), and Source (Pin 1) configuration. Its pin assignment matches industry-standard N-channel SOT23 devices such as 2N7002 and DMN2004K, enabling direct PCB footprint reuse where voltage and current ratings align.

What is the maximum allowable junction temperature during continuous operation?

The DMN3032LQ has a specified operating junction temperature range of −55°C to +150°C. Under continuous DC conditions with recommended PCB layout (2 oz copper, minimum pad), the absolute maximum junction temperature is +150°C, corresponding to a maximum power dissipation of 1.3 W at +25°C ambient.

Does DMN3032LQ support logic-level gate drive from 3.3V microcontrollers?

Yes-the gate threshold voltage V_GS(TH) is specified from 1.0 V to 2.0 V, and R_DS(ON) is guaranteed at 45 mΩ max with only 4.5V V_GS. At 3.3V, the device remains partially enhanced and delivers usable current (≥2.5A), though full 5.4A rating requires ≥4.5V drive per datasheet test conditions.

How does the body diode performance compare to external Schottky diodes in flyback or boost topologies?

The integrated body diode has V_SD = 0.7–1.0 V at 1A and reverse recovery time not characterized, making it suitable for non-critical freewheeling paths. For high-efficiency or high-frequency flyback/boost, an external Schottky (e.g., PMEG4005AEH) with lower V_F and faster t_rr is recommended-especially above 500 kHz switching.

DMN3032LQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 481 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 800mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3032LQ-13 FAQ

1.How can I place an order for DMN3032LQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3032LQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3032LQ-13 reliable?

The price and inventory of DMN3032LQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3032LQ-13 is usually 5 days.

3.What payment methods are accepted for DMN3032LQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3032LQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3032LQ-13?

DMN3032LQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3032LQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3032LQ-13?

For technical support, including DMN3032LQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3032LQ-13 requirements.

6.How does Aetrix verify that DMN3032LQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN3032LQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3032LQ-13 meets industry standards.

7.What is the process for return or replacement of DMN3032LQ-13?

All DMN3032LQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3032LQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3032LQ-13 part is unused and in its original packaging.

Return procedure for DMN3032LQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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