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Diodes Incorporated DMN3033LSDQ-13
- Part No.:
- DMN3033LSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3033LSDQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 6.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,383
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Product details
Overview
DMN3033LSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 20 mΩ RDS(ON) @ 10V VGS, and 6.9A continuous drain current at +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power management functions including backlighting and DC-DC converters.
For engineers reviewing the DMN3033LSDQ-13 datasheet, DMN3033LSDQ-13 pinout, DMN3033LSDQ-13 application, or DMN3033LSDQ-13 equivalent, key selection criteria include low gate threshold (1–2.1V), fast switching (tD(ON) = 11 ns), low input capacitance (Ciss = 725 pF), and thermal resistance (RθJA = 62.5 °C/W) under FR-4 PCB mounting conditions.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package with independent gate, source, and drain terminals per channel. Its low RDS(ON) at 4.5V VGS (27 mΩ) enables efficient operation in 5V logic-driven automotive subsystems, while its ±20V VGSS rating supports robust gate drive margin.
The device features low gate charge (Qg = 6.4–13 nC), fast turn-off delay (tD(OFF) = 63 ns), and low reverse transfer capacitance (Crss = 92 pF), enabling high-frequency synchronous rectification and PWM control in compact DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12V automotive rail applications with transient margin. |
| RDS(ON) @ 10V | 20 mΩ - Enables ≤138 mW conduction loss at 6.9A, suitable for high-efficiency power stages. |
| RDS(ON) @ 4.5V | 27 mΩ - Ensures reliable switching with standard 5V microcontroller GPIO or PMIC gate drivers. |
| ID (continuous) | 6.9 A @ TA = +25°C - Supports sustained load currents in LED backlight drivers and local point-of-load regulators. |
| Ciss | 725 pF - Low input capacitance reduces gate drive power and improves switching efficiency above 500 kHz. |
| tD(OFF) | 63 ns - Short turn-off delay minimizes shoot-through risk in half-bridge configurations. |
| RθJA | 62.5 °C/W - Thermal performance validated on 2 oz. copper FR-4 PCB, enabling 2 W dissipation without forced cooling. |
Pinout & Package
Package: SO-8, surface-mount, molded green plastic (UL 94V-0), moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel MOSFET; accepts 0–10V logic-level drive. |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1 current; electrically isolated from S2 unless externally tied. |
| 3 (D2) | Drain of Channel 2 | High-side or low-side power switch node for second channel; shares thermal pad with D1. |
| 4 (S2) | Source of Channel 2 | Return path for Channel 2 current; separate from S1 to support floating or differential topologies. |
| 5 (D1) | Drain of Channel 1 | Main power output node for Channel 1; bonded to exposed thermal pad for enhanced heat dissipation. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second N-channel MOSFET; fully decoupled from G1. |
| 7 (S1) | Source of Channel 1 (repeated) | Same as Pin 2 - dual-source configuration confirms common-source layout for Channel 1. |
| 8 (D2) | Drain of Channel 2 (repeated) | Same as Pin 3 - dual-drain configuration confirms shared drain connection for Channel 2 in SO-8 layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) = 1–2.1 V ensures full enhancement with 3.3V/5V logic, reducing need for level shifters. |
| Low input/output leakage | IDSS ≤ 100 nA and IGSS ≤ ±100 nA minimize standby power loss in always-on automotive modules. |
| Fast switching speed | tR = 7 ns and tF = 30 ns enable >1 MHz PWM operation with minimal overlap loss. |
| Thermally optimized SO-8 | Exposed drain pads (Pins 3, 5, 8) provide direct thermal path to PCB copper, lowering junction-to-board RθJB. |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and vibration/shock requirements per IATF 16949. |
Applications
| Automotive LED Backlighting | Automotive DC-DC Converter |
|---|---|
Use Scenario: Driving segmented LCD backlight arrays in instrument clusters and infotainment displays. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED strings with independent dimming via PWM. Use Value: 27 mΩ RDS(ON) @ 4.5V enables precise 0–100% brightness control using MCU GPIO without external gate drivers. |
Use Scenario: Synchronous rectification in 12V-to-5V/3.3V buck converters for ADAS camera modules. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes in continuous conduction mode (CCM). Use Value: 20 mΩ RDS(ON) @ 10V reduces conduction loss by >60% vs. 40V/1A Schottky, improving converter efficiency from 88% to ≥93%. |
| Automotive Power Management Unit | Body Control Module Load Switching |
Use Scenario: Local voltage regulation and sequencing for microcontrollers, sensors, and CAN transceivers. IC Role / Device Role / Timing Role: Dual N-channel load switch providing controlled power-up/down sequencing and overcurrent protection. Use Value: Independent gate control allows staggered turn-on to limit inrush current; 30V rating accommodates load dump transients up to ISO 7637-2 Pulse 5a. |
Use Scenario: Driving solenoids, relays, and small motors in door lock actuators and seat position controls. IC Role / Device Role / Timing Role: Robust low-side driver with integrated body diode for inductive kickback clamping. Use Value: VSD = 0.5–1.2 V forward voltage limits clamp energy dissipation; 30A pulsed rating handles 100 ms stall currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSDQ-13 | Lower RDS(ON): 13.5 mΩ @ 10V; higher Qg: 14.5 nC; same SO-8 package. | Better conduction efficiency but requires stronger gate drive; less suitable for 3.3V logic interfaces. | Select when thermal budget is tight and gate drive capability ≥20 mA is available. |
| NTMFS4C02NT1G | Higher VDSS: 40V; higher RDS(ON): 32 mΩ @ 4.5V; PowerPAK SO-8 package with enhanced thermal pad. | Supports 24V systems and higher transient immunity but sacrifices efficiency in 12V applications. | Select for mixed-voltage platforms requiring 40V rating and superior thermal performance (RθJA = 45 °C/W). |
Compared with DMN3033LSDQ-13, DMN3025LSDQ-13 offers lower conduction loss at cost of higher gate drive demand, while NTMFS4C02NT1G trades efficiency for wider voltage range and better thermal handling-making DMN3033LSDQ-13 optimal for cost-sensitive, 12V AEC-Q101-compliant designs where 30V headroom suffices.
Availability
DMN3033LSDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, DC-DC conversion, and body control module load switching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3033LSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN3033LSDQ-13 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power switching in infotainment, lighting, and power management subsystems operating from −40°C to +125°C ambient.
FAQ
Is DMN3033LSDQ-13 suitable for hot-swap applications?
Yes. Its 30V VDSS, low RDS(ON), and AEC-Q101 qualification make it viable for controlled hot-swap insertion in 12V automotive domains. The device supports soft-start via gate resistor tuning and withstands repetitive load-dump transients when used with appropriate TVS clamping and RC snubbing networks.
What is the maximum safe operating junction temperature?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit. Derating begins at +125°C ambient on standard FR-4 PCB; thermal design must ensure TJ ≤ 150°C under worst-case power dissipation (2 W) and ambient conditions.
Does DMN3033LSDQ-13 have integrated ESD protection?
No. The device does not integrate on-chip ESD protection diodes. External TVS devices are recommended on gate and drain lines in automotive environments, especially where human interface or cable-connected nodes are present, to meet ISO 10605 requirements.
Can both channels be paralleled for higher current capacity?
Not recommended. While electrically possible, mismatch in VGS(TH) (±0.3V typical) and RDS(ON) (±20%) between channels causes uneven current sharing. For >6.9A applications, use a single-channel part with higher rated current or implement active current balancing.
DMN3033LSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 725pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN3033LSDQ-13 FAQ
1.How can I place an order for DMN3033LSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3033LSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3033LSDQ-13 reliable?
The price and inventory of DMN3033LSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3033LSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3033LSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3033LSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3033LSDQ-13?
DMN3033LSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3033LSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3033LSDQ-13?
For technical support, including DMN3033LSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3033LSDQ-13 requirements.
6.How does Aetrix verify that DMN3033LSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3033LSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3033LSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3033LSDQ-13?
All DMN3033LSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3033LSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3033LSDQ-13 part is unused and in its original packaging.
Return procedure for DMN3033LSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3033LSDQ-13 Tags
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