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Diodes Incorporated DMN3033LSNQ-7
- Part No.:
- DMN3033LSNQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN3033LSNQ-7.pdf
- Description:
- MOSFET N-CH 30V 6A SC59
- Quantity:
- Payment:
- Shipping:
Inventory:2,660
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Product details
Overview
DMN3033LSNQ-7 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SC-59 package, rated for 30V VDSS, 30mΩ RDS(on) @ 10VGS, and 6A continuous drain current at +25°C. It delivers low gate charge (10.5nC) and fast switching for high-efficiency DC-DC converters and motor control circuits.
For engineers reviewing the DMN3033LSNQ-7 datasheet, DMN3033LSNQ-7 pinout, DMN3033LSNQ-7 application, or DMN3033LSNQ-7 equivalent, key selection criteria include its 4.5V logic-level gate drive capability, 90°C/W thermal resistance on FR-4, AEC-Q101 qualification, and SC-59 footprint compatibility with space-constrained automotive and industrial power stages.
Technical Context
This MOSFET employs a planar silicon process optimized for low RDS(on) and minimized gate-to-drain charge (Qgd = 2.9nC), enabling efficient synchronous rectification and PWM-driven load switching. Its 1.0–2.1V gate threshold supports robust noise immunity while remaining compatible with 3.3V and 5V microcontroller outputs.
Thermally, it is characterized with 1.4W power dissipation on a 1"×1" FR-4 board (2 oz Cu), and its normalized RDS(on) variation remains within ±15% across –55°C to +125°C ambient, ensuring stable conduction in automotive under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche; suitable for 24V automotive and 12V industrial bus systems. |
| RDS(on) @ 10VGS | 30mΩ max - Enables ≤180mW conduction loss at 6A, critical for thermally constrained PCB layouts. |
| RDS(on) @ 4.5VGS | 40mΩ max - Ensures full enhancement with standard 3.3V/5V logic-level drivers without gate boosting. |
| Qg | 10.5nC typ - Reduces gate drive power and switching transition time in high-frequency (>500kHz) SMPS designs. |
| tD(off) | 63ns typ - Supports fast turn-off in synchronous buck topologies to minimize shoot-through risk. |
| TJ Range | –55°C to +150°C - Validated operation across full AEC-Q101 temperature grade for engine control and ADAS modules. |
Pinout & Package
SC-59 package: surface-mount, 3-pin, gull-wing leadform; molded green compound (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current-carrying terminal (high-side or low-side switch node) | Connected to power rail or inductive load; requires thermal relief pad per AP02001 layout guidelines. |
| G (Gate) | Control input for channel modulation | High-impedance node; sensitive to ESD and ringing-requires <10mm trace length and local 100nF bypass. |
| S (Source) | Reference terminal for gate drive and current return path | Must be tied directly to power ground plane to minimize common-source inductance in switching paths. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power applications including body control modules and HVAC actuators. |
| Low Qgd/Qg ratio (27%) | Improves hard-switching efficiency and reduces Miller-induced false turn-on in high-dV/dt environments. |
| Green, halogen-free construction | Complies with EU RoHS 2 and automotive ELV directives; no bromine (<900ppm), chlorine (<900ppm), antimony (<1000ppm). |
| 1.4W PD on standard FR-4 | Enables direct replacement of SOT-23 MOSFETs without heatsink or board redesign in space-limited modules. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Driving brushed DC motors in automotive seat adjusters and power window modules. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation. Use Value: 40mΩ RDS(on) @ 4.5VGS ensures full enhancement from MCU GPIO, eliminating external level-shifting circuitry. | Use Scenario: Synchronous rectifier in 12V-to-3.3V buck converter for infotainment SoC power rails. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss. Use Value: 10.5nC total gate charge enables efficient 1MHz operation with minimal driver IC loading. |
| Backlighting | Power Management Functions |
Use Scenario: LED current sink in LCD backlight dimming circuits for instrument clusters. IC Role / Device Role / Timing Role: Constant-current switch modulated via PWM to control luminance. Use Value: Tight VGS(th) distribution (1.0–2.1V) ensures consistent turn-on across temperature and unit-to-unit variance. | Use Scenario: Load switch for USB-C port power delivery sequencing in telematics units. IC Role / Device Role / Timing Role: Controlled hot-swap FET enabling inrush current limiting and fault isolation. Use Value: Body-diode forward voltage (0.7–1.1V) allows reverse-current blocking during hot-plug events without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(on) (25mΩ @ 10V), same SC-70 package but higher capacitance (Ciss = 920pF vs. 755pF) | Better conduction loss, but slower switching due to higher input capacitance | Select when thermal margin is tighter than switching frequency requirements. |
| NTMFS4C06NT1G | SO-8FL package, higher ID (12.5A), lower RDS(on) (5.2mΩ), but requires gate driver for 3.3V logic | Higher power handling, but incompatible SC-59 footprint and not logic-level at 3.3V | Select only if board redesign is permitted and >6A peak current is required. |
Compared with DMN3033LSNQ-7, DMN3025LSD-13 offers lower conduction loss in identical footprint but sacrifices switching speed, while NTMFS4C06NT1G provides superior power density at the cost of layout compatibility and gate drive simplicity.
Availability
DMN3033LSNQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC power supplies, and consumer backlighting systems requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN3033LSNQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
This device belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for reliable, high-efficiency power switching in automotive and industrial environments where space, thermal performance, and qualification rigor are critical.
FAQ
Is DMN3033LSNQ-7 suitable for 3.3V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.0–2.1V and guaranteed RDS(on) of 40mΩ at VGS = 4.5V, it fully enhances using standard 3.3V GPIO outputs. No level shifter is required, though a series gate resistor (10–47Ω) is recommended to dampen ringing.
What is the maximum allowable PCB trace width for the Drain pad in SC-59?
The recommended solder pad layout follows Diodes' AP02001 guideline: Drain pad width should be 2.4mm (min), with thermal relief spokes ≥0.3mm wide and ≥1.5mm long. Exceeding 3.0mm width risks solder bridging during reflow and violates JEDEC MO-178B mechanical limits for SC-59.
Does DMN3033LSNQ-7 support bidirectional current flow?
No. As a unidirectional N-channel MOSFET, it conducts only from Drain to Source when enhanced. Its intrinsic body diode allows reverse current (Source to Drain) only during freewheeling, but this path has higher VSD (0.7–1.1V) and is not rated for continuous bidirectional switching.
How does its thermal resistance compare to SOT-23 equivalents?
At 90°C/W (Junction-to-Ambient, 1"×1" FR-4), DMN3033LSNQ-7 achieves ~20% lower θJA than typical SOT-23 MOSFETs (~110–120°C/W), due to its larger SC-59 copper leadframe area and optimized thermal pad exposure-critical for sustained 4A+ operation without derating.
DMN3033LSNQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.5 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 755 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59-3
DMN3033LSNQ-7 FAQ
1.How can I place an order for DMN3033LSNQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3033LSNQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3033LSNQ-7 reliable?
The price and inventory of DMN3033LSNQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3033LSNQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3033LSNQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3033LSNQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3033LSNQ-7?
DMN3033LSNQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3033LSNQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3033LSNQ-7?
For technical support, including DMN3033LSNQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3033LSNQ-7 requirements.
6.How does Aetrix verify that DMN3033LSNQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3033LSNQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3033LSNQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3033LSNQ-7?
All DMN3033LSNQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3033LSNQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3033LSNQ-7 part is unused and in its original packaging.
Return procedure for DMN3033LSNQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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