My Inquiry
My Account
Diodes Incorporated DMN3035LWN-13
- Part No.:
- DMN3035LWN-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3035LWN-13.pdf
- Description:
- MOSFET 2N-CH 5.5A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,553
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN3035LWN-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an 8-pin V-DFN3020-8 (Type N) package, rated for 30V VDSS, 35mΩ RDS(ON) @ 10V, and 5.5A continuous drain current at +25°C. It serves as a compact, high-efficiency power switch in motor control and DC-AC inverter half-bridge legs.
For engineers reviewing the DMN3035LWN-13 datasheet, DMN3035LWN-13 pinout, DMN3035LWN-13 application, or DMN3035LWN-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V gate drive, AEC-Q101 qualification, thermal resistance of 71°C/W (with copper pad), and low Qg (4.5nC @ 4.5V) for fast switching in space-constrained power stages.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single thermally efficient V-DFN3020-8 package with shared thermal pad and independent gate/drain/source terminals. Its design targets synchronous rectification and half-bridge topologies where channel-to-channel RDS(ON) tracking and low Ciss (399pF) reduce cross-conduction loss and gate drive burden.
The device operates across –55°C to +150°C junction temperature, supports ±20V gate drive, and features low reverse recovery charge (QRR = 2.4nC) and fast turn-off (tF = 2.0ns), enabling high-frequency PWM operation up to 500kHz in compact DC-DC and motor driver designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage for use in 24V nominal systems with transient margin. |
| RDS(ON) @ VGS = 10V | 35mΩ max - Enables ≤180mW conduction loss at 5.5A, suitable for thermally constrained PCB layouts. |
| RDS(ON) @ VGS = 4.5V | 45mΩ max - Ensures reliable turn-on with 5V logic-level gate drivers without level-shifting. |
| Qg @ 4.5V | 4.5nC - Reduces gate drive power and enables <10ns switching transitions with 3Ω series resistance. |
| Ciss | 399pF - Limits Miller-induced shoot-through risk in half-bridge configurations at 15V VDS. |
| TJ Range | –55°C to +150°C - Qualified per AEC-Q101, supporting under-hood automotive and industrial ambient conditions. |
| RθJA (with 1″² Cu) | 71°C/W - Allows 1.1W continuous dissipation at +70°C ambient when using recommended copper pour. |
Pinout & Package
V-DFN3020-8 (Type N) package: 3.0mm × 2.0mm footprint, 0.8mm height, exposed thermal pad (Pin 5), RoHS-compliant NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | High-side or low-side power path node; electrically isolated from Pin 8 (D2) for half-bridge separation. |
| Pin 2 (S1) | Source of Channel 1 | Return path for Channel 1; tied to gate driver reference or shunt resistor for current sensing. |
| Pin 3 (G1) | Gate of Channel 1 | Control input requiring <4.5nC charge; layout must minimize inductance to prevent oscillation. |
| Pin 4 (G2) | Gate of Channel 2 | Independent gate terminal; enables asynchronous or complementary drive of second channel. |
| Pin 5 (Thermal Pad) | Exposed Drain Connection / Thermal Path | Internally connected to both drains (D1/D2); must be soldered to PCB ground plane for thermal and EMI performance. |
| Pin 6 (S2) | Source of Channel 2 | Independent return for Channel 2; allows separate current monitoring or floating source configuration. |
| Pin 7 (G2) | Redundant Gate Label (see Pin 4) | Same signal as Pin 4; datasheet confirms G2 assigned to Pin 4 and Pin 7 - Pin 7 is not functional. |
| Pin 8 (D2) | Drain of Channel 2 | Second power switch node; symmetric layout with D1 enables balanced thermal distribution in dual-switch topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual N-channel topology | Ensures consistent RDS(ON) and switching timing between channels, critical for phase-balanced inverters. |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics applications requiring high reliability and stress testing. |
| Low Qgd/Qg ratio (1.8nC/4.5nC @ 4.5V) | Minimizes Miller plateau duration, reducing switching loss and improving controllability in hard-switched converters. |
| Green, halogen-free construction | Contains <900ppm Br, <900ppm Cl, <1000ppm Sb - meets global environmental compliance without sacrificing thermal performance. |
| 1.1W PD at +70°C (with 1″² Cu) | Supports sustained 4.9A load current in compact motor drivers without forced air cooling. |
Applications
| DC Motor Control | DC-AC Inverters |
|---|---|
|
Use Scenario: Bidirectional 24V brushed DC motor drive in automotive seat/mirror actuators. IC Role / Device Role / Timing Role: Dual-channel power switch implementing H-bridge low-side and high-side legs with synchronized PWM. Use Value: 45mΩ RDS(ON) @ 4.5V enables direct microcontroller GPIO drive; low QRR (2.4nC) suppresses body-diode ringing during direction reversal. |
Use Scenario: Single-phase 24V-to-110V AC inverter for portable medical equipment power supplies. IC Role / Device Role / Timing Role: Half-bridge output stage switching at 20kHz with dead-time controlled by external gate driver. Use Value: Matched RDS(ON) ensures balanced conduction loss; 71°C/W RθJA sustains 1.1W dissipation without heatsink in sealed enclosures. |
| Industrial PLC I/O Modules | LED Driver Power Stages |
|
Use Scenario: Solid-state relay replacement in 24V digital output modules handling inductive loads. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode clamping inductive kickback during load deactivation. Use Value: 13A avalanche current rating (IAS) and 9.0mJ EAS absorb repetitive inductive energy without snubbers. |
Use Scenario: Constant-current buck-boost LED driver for automotive exterior lighting (DRL/position lamps). IC Role / Device Role / Timing Role: Synchronous rectifier in high-efficiency DC-DC converter operating at 300kHz. Use Value: 399pF Ciss and 50pF Crss minimize gate drive losses; low RDS(ON) reduces thermal derating at 100% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-13 | Lower RDS(ON) (25mΩ @ 10V), same 30V rating, but larger V-DFN5045-12 package (5.0×4.5mm). | Better conduction efficiency but requires 2.5× larger PCB area and higher gate charge (12.5nC @ 10V). | Select when thermal budget is tight and board space permits; avoid in ultra-compact motor drivers. |
| SI6926ADQ-T1-GE3 | Same V-DFN3020-8 package, 30V rating, but higher RDS(ON) (50mΩ @ 4.5V) and no AEC-Q101 qualification. | Cost-optimized for consumer-grade inverters; lacks automotive reliability validation and has slower tF (4.5ns). | Acceptable for non-automotive industrial controls where AEC-Q101 is not mandated and 50mΩ RDS(ON) is acceptable. |
Compared with DMN3035LWN-13, DMN3025LFD-13 delivers lower conduction loss in thermally demanding applications but sacrifices board-area efficiency, while SI6926ADQ-T1-GE3 trades automotive qualification and switching speed for cost-making DMN3035LWN-13 optimal for space-constrained AEC-Q101 designs needing balanced RDS(ON), Qg, and package size.
Availability
DMN3035LWN-13 is available at Aetrix Electronics and suitable for DC motor control, DC-AC inverters, industrial PLC I/O modules, and LED driver power stages requiring stable component supply, AEC-Q101 compliance, and compact 3.0mm × 2.0mm packaging.
Supply support for DMN3035LWN-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMN3035LWN belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered for robustness in automotive body electronics and industrial motor drives where thermal efficiency, small footprint, and gate-drive compatibility with 3.3V/5V controllers are essential.
FAQ
What is the maximum continuous drain current for DMN3035LWN-13 at +70°C ambient?
The maximum continuous drain current is 4.4A at +70°C ambient when mounted on a standard FR-4 board with minimum recommended pad layout (RθJA = 162°C/W). With a 1-inch square copper plate, it rises to 4.9A due to improved thermal dissipation (RθJA = 71°C/W).
Is the thermal pad (Pin 5) electrically connected to the drains?
Yes, the exposed thermal pad (Pin 5) is internally connected to both drain terminals (D1 and D2). It must be soldered to a PCB ground or power plane to ensure proper thermal transfer and electrical referencing-floating the pad degrades thermal performance and may cause EMI issues.
Does DMN3035LWN-13 support 3.3V logic-level gate drive?
No-its gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.0V, but RDS(ON) is only specified down to 4.5V gate drive (45mΩ max). At 3.3V, the device operates in weak inversion with uncontrolled RDS(ON); a gate driver or level shifter is required for full enhancement.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 0.75–1.1V at 1A and tRR = 7.9ns, offering faster recovery than standard PN diodes but higher forward drop than Schottky alternatives. It suffices for freewheeling in low-duty-cycle motor drives but is not optimized for high-frequency synchronous rectification where Schottky co-packaging would be preferred.
DMN3035LWN-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 399pF @ 15V
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3020-8
DMN3035LWN-13 FAQ
1.How can I place an order for DMN3035LWN-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3035LWN-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3035LWN-13 reliable?
The price and inventory of DMN3035LWN-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3035LWN-13 is usually 5 days.
3.What payment methods are accepted for DMN3035LWN-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3035LWN-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3035LWN-13?
DMN3035LWN-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3035LWN-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3035LWN-13?
For technical support, including DMN3035LWN-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3035LWN-13 requirements.
6.How does Aetrix verify that DMN3035LWN-13 is sourced from the original manufacturer or authorized distributors?
All DMN3035LWN-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3035LWN-13 meets industry standards.
7.What is the process for return or replacement of DMN3035LWN-13?
All DMN3035LWN-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3035LWN-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3035LWN-13 part is unused and in its original packaging.
Return procedure for DMN3035LWN-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3035LWN-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
