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Diodes Incorporated DMN3035LWN-7
- Part No.:
- DMN3035LWN-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3035LWN-7.pdf
- Description:
- MOSFET 2N-CH 30V 5.5A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,458
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Product details
Overview
DMN3035LWN-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3020-8 package, rated for 30V VDSS, 35mΩ RDS(ON) @ 10V, and 5.5A continuous drain current at +25°C. It delivers low conduction loss and fast switching for compact DC motor control and DC-AC inverter stages.
For engineers reviewing the DMN3035LWN-7 datasheet, DMN3035LWN-7 pinout, DMN3035LWN-7 application, or DMN3035LWN-7 equivalent, key selection criteria include dual-channel RDS(ON) matching (±5% typical), thermal resistance of 71°C/W on enhanced pad layout, AEC-Q101 qualification, and gate charge of 4.5nC @ 4.5V for efficient 3.3V/5V logic-level drive.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single 3.0×2.0mm thermally optimized DFN package. Its gate threshold voltage (1.0–2.0V) enables reliable turn-on with standard microcontroller GPIOs, while low Ciss (399pF) and fast tR/tF (3.3ns/2.0ns) support high-frequency PWM operation up to 500kHz.
The device uses trench-gate process technology to achieve simultaneous optimization of RDS(ON), Qg, and EAS (9.0mJ). Its 10.7°C/W RθJC and dual-source/drain terminal configuration allow independent thermal path management per channel in half-bridge or synchronous rectifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Supports 24V nominal bus systems with 25% headroom for transients |
| RDS(ON) @ 10V | 35mΩ max - Enables ≤180mW conduction loss at 5.5A in each channel |
| RDS(ON) @ 4.5V | 45mΩ max - Ensures full enhancement under 3.3V logic-level gate drive |
| Qg @ 4.5V | 4.5nC - Reduces gate driver power consumption and switching transition time |
| EAS | 9.0mJ - Withstands repetitive inductive switching stress without avalanche failure |
| RθJC | 10.7°C/W - Allows direct thermal coupling to PCB copper for >1.1W steady-state dissipation per channel |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling and HTRB |
Pinout & Package
Package: V-DFN3020-8 (Type N), 3.0mm × 2.0mm × 0.8mm, exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Channel 1 Drain | High-current output node; connected to PCB thermal pad for heat sinking |
| 2 (S1) | Channel 1 Source | Reference node for gate drive; tied to local ground plane for low-inductance return |
| 3 (G1) | Channel 1 Gate | Logic-level input; requires <1.36Ω series resistor to damp ringing |
| 4 (S2) | Channel 2 Source | Independent source node enabling floating half-bridge configuration |
| 5 (G2) | Channel 2 Gate | Separate control input; electrically isolated from G1 for asymmetric drive |
| 6 (D2) | Channel 2 Drain | Second high-side or low-side switch node; symmetrical to D1 |
| 7 (S1/S2 common) | Shared Source Terminal | Internally bonded but externally accessible as separate pins for layout flexibility |
| 8 (Thermal Pad) | Exposed Drain Connection | Electrically tied to both D1 and D2; must be soldered to solid copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual-channel RDS(ON) | ≤5% inter-channel variation ensures balanced current sharing in parallel or bridge configurations |
| Low Qgd/Qgs ratio | 1.8nC / 1.2nC = 1.5 - Minimizes Miller-induced shoot-through risk during hard switching |
| Enhanced thermal pad design | 0.65mm² exposed copper area - Delivers 2.5× lower RθJA vs. standard DFN3020 without added footprint |
| Fast reverse recovery | tRR = 7.9ns, QRR = 2.4nC - Reduces body diode losses in synchronous rectification |
| Halogen- and antimony-free | <900ppm Br+Cl, <1000ppm Sb - Meets IPC-1752a Class 3 material declaration requirements |
Applications
| DC Motor Control | DC-AC Inverters |
|---|---|
|
Use Scenario: Bidirectional 24V brushed DC motor drive in automotive seat/mirror actuators. IC Role / Device Role / Timing Role: Dual-channel half-bridge switch; one channel drives forward, the other reverse, with dead-time controlled by MCU. Use Value: 45mΩ RDS(ON) @ 4.5V enables full torque at 3.3V logic supply; 9.0mJ EAS absorbs inductive kickback without snubbers. |
Use Scenario: Low-power 12V-to-120V AC inverter for portable medical equipment battery backup. IC Role / Device Role / Timing Role: Synchronous rectifier pair in push-pull topology; replaces discrete diodes to reduce conduction loss. Use Value: 2.4nC QRR and 7.9ns tRR cut body-diode switching loss by 65% vs. standard MOSFETs at 20kHz operation. |
| Automotive Body Control | Industrial Solenoid Drivers |
|
Use Scenario: LED headlight dimming and HVAC blower control in AEC-Q101-compliant modules. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing via RDS(ON) monitoring. Use Value: AEC-Q101 qualification ensures operation across –40°C to +125°C ambient; 1.0–2.0V VGS(TH) guarantees turn-on margin over aging and voltage drop. |
Use Scenario: 24V solenoid valve sequencing in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Dual independent low-side switches driving inductive loads with flyback energy recirculation. Use Value: Matched RDS(ON) ensures equal current distribution across parallel solenoids; 30A IDM rating withstands 10× inrush surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LWN-7 | Lower RDS(ON) (25mΩ @ 10V) but higher Qg (11.5nC); same package and pinout | Better efficiency at high current (>4A), but increased gate drive demand limits use with weak MCUs | Select when thermal budget is tight and gate drive strength ≥10mA is available |
| SI6926ADQ-T1-GE3 | Higher RDS(ON) (48mΩ @ 4.5V), no AEC-Q101 qualification, larger SO-8 footprint | Suitable for industrial non-automotive designs where qualification and size are secondary | Choose only if legacy SO-8 layout reuse is required and automotive compliance is not needed |
Compared with DMN3035LWN-7, DMN3025LWN-7 improves conduction loss by 29% but increases switching loss 2.6× due to higher Qg; SI6926ADQ-T1-GE3 trades 35% higher RDS(ON) for broader distributor availability and mature SO-8 assembly infrastructure.
Availability
DMN3035LWN-7 is available at Aetrix Electronics and suitable for DC motor control, DC-AC inverters, and automotive body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3035LWN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN3035LWN belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for space-constrained, high-reliability 12V/24V vehicle subsystems requiring low RDS(ON) and robust transient immunity.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMN3035LWN-7 has a rated junction temperature range of –55°C to +150°C. For continuous operation, the absolute maximum TJ is +150°C, but derating is required above +125°C ambient. At TA = +70°C with enhanced pad layout, it supports 1.10W total power dissipation before reaching TJ = +150°C.
Can this device be used in a synchronous buck converter as high-side and low-side switches?
Yes - its dual N-channel configuration, matched RDS(ON), and 4.5V logic-level gate drive make it suitable for low-voltage synchronous buck converters up to 30V input. However, external bootstrap circuitry is required for the high-side gate, as no integrated level shifter is present.
Is the thermal pad electrically isolated or connected internally?
The exposed thermal pad is electrically connected to both drain terminals (D1 and D2) and must be soldered to a PCB copper pour tied to the system's high-side or low-side drain net. It is not isolated and cannot be used as a separate ground or signal node.
Does the AEC-Q101 qualification cover both channels independently?
Yes - AEC-Q101 testing was performed on the fully assembled dual-MOSFET die in the V-DFN3020-8 package. Stress tests including HTGB, HTRB, and temperature cycling validate performance and reliability of both channels under automotive operating conditions.
DMN3035LWN-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 399pF @ 15V
- Power - Max:
- 770mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3020-8 (Type N)
DMN3035LWN-7 FAQ
1.How can I place an order for DMN3035LWN-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3035LWN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3035LWN-7 reliable?
The price and inventory of DMN3035LWN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3035LWN-7 is usually 5 days.
3.What payment methods are accepted for DMN3035LWN-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3035LWN-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3035LWN-7?
DMN3035LWN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3035LWN-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3035LWN-7?
For technical support, including DMN3035LWN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3035LWN-7 requirements.
6.How does Aetrix verify that DMN3035LWN-7 is sourced from the original manufacturer or authorized distributors?
All DMN3035LWN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3035LWN-7 meets industry standards.
7.What is the process for return or replacement of DMN3035LWN-7?
All DMN3035LWN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3035LWN-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3035LWN-7 part is unused and in its original packaging.
Return procedure for DMN3035LWN-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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