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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3042LFDF-13

Name: DMN3042LFDF-13
Brand: Diodes Incorporated
SKU: DMN3042LFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3042LFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN3042LFDF-13.pdf

Description:: MOSFET N-CH 30V 7A 6UDFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3042LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 28 mΩ R_DS(ON) @ V_GS = 10 V, 7.0 A continuous drain current at T_A = +25°C, and low 0.6 mm profile. It serves as a high-efficiency power switch in compact DC-DC converters and load switching circuits.

For engineers reviewing the DMN3042LFDF-13 datasheet, DMN3042LFDF-13 pinout, DMN3042LFDF-13 application, or DMN3042LFDF-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V (32 mΩ), thermal resistance (R_θJA = 61 °C/W with 1-inch copper pad), gate charge (Q_g = 13.3 nC @ 10 V), and U-DFN2020-6 footprint compatibility.

Technical Context

This MOSFET employs a trench-gate process optimized for low on-resistance while maintaining fast switching speed (t_D(ON) = 1.5 ns, t_F = 4.9 ns) and low input capacitance (C_iss = 570 pF). Its gate threshold voltage (V_GS(TH) = 0.6–1.4 V) supports direct logic-level drive from 3.3 V and 5 V microcontrollers.

The device integrates a body diode with V_SD = 0.7–1.2 V @ I_S = 1 A and t_RR = 7.8 ns, enabling synchronous rectification and flyback recovery in buck and boost topologies. Thermal design is enabled by R_θJC = 9.3 °C/W and a 0.007 g mass suited for thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in off-state; suitable for 24 V rail and 12 V automotive auxiliary systems.
R_DS(ON) @ 10 V	28 mΩ - Enables ≤196 mW conduction loss at 7 A; critical for efficiency in portable power stages.
R_DS(ON) @ 4.5 V	32 mΩ - Ensures robust turn-on with standard 3.3 V GPIOs without gate boosting.
Q_g @ 10 V	13.3 nC - Determines gate driver power requirement; enables <100 kHz PWM operation with low-drive ICs.
P_D (with 1″ Cu)	2.1 W - Supports 6.5 A continuous current at T_A = +70°C with minimal heatsinking.
C_iss	570 pF - Limits Miller-induced shoot-through risk; simplifies gate drive layout in half-bridge designs.
t_RR	7.8 ns - Reduces reverse recovery loss in synchronous rectifiers and improves light-load efficiency.

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, exposed drain pad for thermal conduction. Molded green compound (UL 94V-0), NiPdAu-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±12 V rating; low C_iss enables fast edge rates with minimal driver strength.
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration.
3 (D)	Drain	High-current output path; connected to exposed thermal pad for heat dissipation to PCB copper.
4 (D)	Drain	Second drain connection; paralleled with Pin 3 to reduce package inductance and improve current sharing.
5 (S)	Source	Secondary source terminal; reduces source inductance in high-di/dt switching applications.
6 (G)	Gate	Redundant gate terminal; used for Kelvin gate sensing or noise immunity in high-noise environments.

Key Features

Feature	Design Value
0.6 mm profile	Enables integration into ultra-thin consumer electronics (e.g., wearables, USB-C PD adapters) where Z-height is constrained.
4 mm² PCB footprint	Reduces board area by >50% vs. SO-8; supports dense multi-phase regulator modules without sacrificing thermal performance.
Low R_DS(ON) @ 4.5 V	Eliminates need for level-shifting gate drivers in 3.3 V MCU-based power management, lowering BOM count and cost.
Fast switching (t_F = 4.9 ns)	Minimizes transition losses in high-frequency (>500 kHz) DC-DC converters, improving efficiency at light loads.
Halogen- & antimony-free	Meets IPC-1752A Class 2 material declarations; required for RoHS-compliant industrial and medical end equipment.

Applications

Battery-Powered Load Switch

USB-C Power Delivery Switch

Use Scenario: Enabling/disabling power to peripherals in portable devices (e.g., Bluetooth earbuds, smartwatches) using a 3.3 V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; operates in linear and saturated regions during inrush limiting.

Use Value: 32 mΩ R_DS(ON) @ 4.5 V ensures <100 mV dropout at 3 A, preserving battery runtime; 0.6 mm height fits under compact battery cells.

Use Scenario: Hot-swap protection and VCONN switching in USB-C receptacles supporting up to 20 V/5 A.

IC Role / Device Role / Timing Role: High-speed power path switch with controlled turn-on; coordinated with CC logic controller for safe insertion detection.

Use Value: 7.0 A ID rating and 30 V V_DSS cover full USB PD 3.0 specification; fast t_F prevents voltage glitches during plug insertion.

DC-DC Synchronous Rectifier

Automotive Body Control Module

Use Scenario: Secondary-side rectification in 5 V/3 A buck converter for FPGA core supply in embedded vision systems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by complementary PWM signal with dead-time control.

Use Value: 7.8 ns t_RR and 1.2 V V_SD reduce reverse recovery loss by >60% vs. discrete diode; 570 pC Q_g minimizes gate drive loss.

Use Scenario: Driving LED lighting loads (e.g., interior map lights, door courtesy lamps) in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Low-side switch interfacing with CAN/LIN microcontroller outputs; handles pulsed 5 A loads with PWM dimming.

Use Value: 150°C max junction temperature and AEC-Q101 readiness (per Diodes' qualification path) support under-hood ambient conditions; 28 mΩ R_DS(ON) limits self-heating at 100% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LFD-7	R_DS(ON) = 25 mΩ @ 10 V (lower), but 3.0 V V_GS(TH) min (higher gate drive requirement).	Requires ≥4.5 V gate drive; less suitable for 3.3 V logic interfaces.	Select when lowest conduction loss is prioritized and gate drive voltage ≥4.5 V is available.
AO3414	R_DS(ON) = 33 mΩ @ 4.5 V (slightly higher), Q_g = 10.5 nC (lower), and SO-8 package (larger footprint).	Larger thermal resistance (R_θJA ≈ 90 °C/W) limits power density in space-constrained designs.	Choose for legacy SO-8 board reuse or where lower gate charge outweighs R_DS(ON) penalty.

Compared with DMN3025LFD-7 and AO3414, DMN3042LFDF-13 uniquely balances 32 mΩ R_DS(ON) @ 4.5 V, 13.3 nC Q_g, and 0.6 mm height-enabling high-efficiency, ultra-compact switching in battery-powered and USB-C systems where both logic-level drive and thermal density matter.

Availability

DMN3042LFDF-13 is available at Aetrix Electronics and suitable for battery-powered load switching, USB-C power delivery routing, and DC-DC synchronous rectification requiring stable component supply across production volumes.

Supply support for DMN3042LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered for high-efficiency, low-profile power conversion in portable, automotive, and industrial applications where R_DS(ON), gate charge, and thermal performance are co-optimized.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN3042LFDF-13 supports 5.6 A continuous drain current at T_A = +70°C with standard FR-4 PCB and 2 oz copper, per Note 6 in the datasheet. This rating assumes use of the recommended 1-inch square copper pad for thermal enhancement and accounts for derating due to junction-to-ambient thermal resistance (R_θJA = 61 °C/W).

Is this MOSFET qualified for automotive applications?

While DMN3042LFDF-13 is not pre-qualified to AEC-Q101, Diodes Incorporated states that automotive-grade versions with AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing are available upon request. Standard units meet industrial temperature range (–55°C to +150°C) and green compliance requirements applicable to many non-safety-critical automotive subsystems.

How does the U-DFN2020-6 (Type F) package affect PCB layout?

The U-DFN2020-6 (Type F) requires precise stencil aperture design for the exposed drain pad (Pb-free NiPdAu plating) and strict solder paste volume control to prevent voiding. Diodes recommends a 0.4 mm × 0.95 mm thermal pad with 0.3 mm solder mask opening and 0.15 mm solder paste thickness to achieve reliable thermal transfer and mechanical adhesion per J-STD-020 Level 1 moisture sensitivity.

Can this MOSFET be used in linear regulation mode?

Yes-the DMN3042LFDF-13 supports linear operation within its Safe Operating Area (SOA), as shown in Figure 12 of the datasheet. At T_C = 25°C, it sustains 1.5 A at 10 V V_DS for DC operation. However, power dissipation must be limited to ≤2.1 W with proper copper thermal relief, and gate drive must remain within ±12 V to avoid oxide damage during extended linear bias.

DMN3042LFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN3042LFDF-13 FAQ

1.How can I place an order for DMN3042LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3042LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3042LFDF-13 reliable?

The price and inventory of DMN3042LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3042LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN3042LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3042LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3042LFDF-13?

DMN3042LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3042LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3042LFDF-13?

For technical support, including DMN3042LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3042LFDF-13 requirements.

6.How does Aetrix verify that DMN3042LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN3042LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3042LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN3042LFDF-13?

All DMN3042LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3042LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3042LFDF-13 part is unused and in its original packaging.

Return procedure for DMN3042LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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