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Diodes Incorporated DMN3052LSS-13
- Part No.:
- DMN3052LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3052LSS-13.pdf
- Description:
- MOSFET N-CH 30V 7.1A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:724
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Product details
Overview
DMN3052LSS from Diodes Incorporated is a single N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30 V V(BR)DSS, 30 mΩ RDS(ON) @ 10 V VGS, 7.1 A ID max at 25°C, and SO-8 package - deployed in DC-DC converters, LED backlighting, and load switching circuits.
For engineers reviewing the DMN3052LSS datasheet, DMN3052LSS pinout, DMN3052LSS application, or DMN3052LSS equivalent, key selection criteria include gate threshold voltage (0.62–1.2 V), low RDS(ON) at 4.5 V (40 mΩ), thermal resistance (50 °C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching speed (Crss = 82 pF, Ciss = 555 pF) and low gate charge - enabling efficient operation in synchronous buck converters and PWM-controlled power rails.
Its 0.9 V typical VGS(th) enables direct drive from 3.3 V microcontrollers; the body diode exhibits VF = 0.78 V at 2.1 A, supporting freewheeling in inductive loads without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30 V - Maximum drain-source blocking voltage before avalanche conduction; defines safe operating range in 24 V systems. |
| RDS(ON) | 30 mΩ @ 10 V VGS - Enables <150 mW conduction loss at 7.1 A, critical for thermally constrained PCB layouts. |
| ID max | 7.1 A @ 25°C - Continuous current rating under standard SO-8 thermal pad conditions; derates to 5.7 A at 70°C ambient. |
| VGS(th) | 0.62–1.2 V - Low threshold supports logic-level drive from 1.8 V/3.3 V controllers without level-shifting circuitry. |
| Ciss / Crss | 555 pF / 82 pF - Low input and reverse transfer capacitance reduce gate drive power and improve EMI performance in high-frequency switching. |
| RθJA | 50 °C/W - Junction-to-ambient thermal resistance measured on 2 oz copper pad; sets maximum power dissipation limit at 2.5 W. |
Pinout & Package
Package: SO-8 (Surface-Mount Small Outline, 8-pin), molded green plastic housing with matte tin-plated copper leadframe; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel FET die; low-inductance multi-pin layout minimizes source inductance in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Power output node tied to internal drain metallization; pins 5–8 are internally connected and serve as primary heat-sinking path to PCB copper. |
| 3 | Gate (G) | Control terminal accepting TTL/CMOS-compatible voltage; gate input capacitance (Ciss = 555 pF) determines required driver strength for <100 ns turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 40 mΩ - Enables full-load operation from 5 V supply rails without gate boosting, reducing BOM count in USB-powered systems. |
| AEC-Q101 qualified | Qualified for automotive applications including infotainment power supplies and body control modules requiring extended temperature (-55 to +150°C) reliability. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); meets RoHS 2 and ELV compliance for global automotive OEMs. |
| Fast switching capability | Crss = 82 pF and gfs = 10 S - Supports >500 kHz switching in DC-DC regulators while limiting cross-conduction losses in synchronous rectification. |
Applications
| LED Backlighting | DC-DC Buck Converter |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters and LCD displays. IC Role / Device Role / Timing Role: High-side or low-side PWM switch controlling LED current with 100–1000 Hz dimming frequency. Use Value: 30 mΩ RDS(ON) limits conduction loss to <1.5 W at 7 A, enabling compact thermal design without heatsinks. |
Use Scenario: Synchronous rectifier in 12 V to 3.3 V step-down converter for microcontroller power rails. IC Role / Device Role / Timing Role: Low-side switch in continuous conduction mode (CCM) buck topology, driven by controller's complementary output. Use Value: 40 mΩ RDS(ON) at 4.5 V gate drive ensures >92% efficiency at 5 A load, outperforming discrete diode solutions. |
| Automotive Body Control | USB Power Switching |
|
Use Scenario: Load switching for solenoids, relays, and lamps in door module and lighting control units. IC Role / Device Role / Timing Role: Protected high-current switch with integrated gate protection; operates under ISO 7637-2 pulse load dump conditions. Use Value: AEC-Q101 qualification and 30 V V(BR)DSS ensure robustness against 24 V battery transients up to ±100 V. |
Use Scenario: Inrush current limiting and overcurrent protection in USB-C PD power delivery paths. IC Role / Device Role / Timing Role: Hot-swap MOSFET placed between upstream power source and downstream port controller IC. Use Value: 0.9 V typical VGS(th) allows direct control from USB PD controller GPIO, eliminating need for dedicated gate driver IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSS | Lower RDS(ON): 25 mΩ @ 10 V (vs. 30 mΩ), but same SO-8 package and 30 V rating. | Higher current handling (8.5 A vs. 7.1 A) suits higher-power buck stages where thermal margin is tight. | Select when lower conduction loss is prioritized and gate drive capability supports 10 V swing. |
| NTMFS4C09NT1G | Higher V(BR)DSS (40 V), lower RDS(ON) (2.9 mΩ @ 10 V), but PowerSO-8 package with exposed drain pad. | Supports 36 V industrial input rails and delivers >95% efficiency in 12 V → 5 V converters at 10 A. | Choose for new designs needing higher voltage headroom and superior thermal performance; not drop-in compatible due to footprint difference. |
Compared with DMN3025LSS and NTMFS4C09NT1G, the DMN3052LSS offers balanced RDS(ON)/drive-voltage trade-off for 3.3–5 V logic-driven systems, whereas DMN3025LSS improves conduction loss at cost of slightly higher gate charge, and NTMFS4C09NT1G targets higher-voltage, higher-current applications with enhanced thermal dissipation.
Availability
DMN3052LSS is available at Aetrix Electronics and suitable for LED backlighting, DC-DC power conversion, and automotive body control applications requiring stable component supply and long-term lifecycle support.
Supply support for DMN3052LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN3052LSS belongs to Diodes' high-performance power MOSFET product line, engineered specifically for efficiency-critical, space-constrained power management in automotive, industrial, and consumer electronics.
FAQ
Is DMN3052LSS suitable for automotive applications?
Yes - it is qualified to AEC-Q101 standards and rated for operation from −55°C to +150°C junction temperature. Its 30 V V(BR)DSS, low RDS(ON), and green packaging meet Tier-1 automotive requirements for body control modules and display power supplies.
What is the maximum continuous drain current at 85°C ambient?
At TA = 85°C, the maximum continuous drain current is approximately 4.3 A, derived from thermal derating using RθJA = 50 °C/W and PD = 2.5 W maximum. This assumes standard SO-8 mounting on 2 oz copper with adequate airflow or thermal vias.
Can DMN3052LSS be driven directly from a 3.3 V microcontroller GPIO?
Yes - its 0.62–1.2 V gate threshold voltage ensures reliable turn-on with 3.3 V logic, and RDS(ON) remains 40 mΩ at VGS = 4.5 V. For optimal efficiency, ensure gate drive rise time <50 ns to minimize switching losses.
Why is DMN3052LSS marked "NOT RECOMMENDED FOR NEW DESIGN"?
Diodes Incorporated issued this notice because newer-generation MOSFETs (e.g., DMN3025LSS) offer improved RDS(ON) and gate charge. However, DMN3052LSS remains fully supported for legacy production, repair, and long-lifecycle programs with no obsolescence timeline announced.
DMN3052LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 555 pF @ 5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN3052LSS-13 FAQ
1.How can I place an order for DMN3052LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3052LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3052LSS-13 reliable?
The price and inventory of DMN3052LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3052LSS-13 is usually 5 days.
3.What payment methods are accepted for DMN3052LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3052LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3052LSS-13?
DMN3052LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3052LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3052LSS-13?
For technical support, including DMN3052LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3052LSS-13 requirements.
6.How does Aetrix verify that DMN3052LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMN3052LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3052LSS-13 meets industry standards.
7.What is the process for return or replacement of DMN3052LSS-13?
All DMN3052LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3052LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3052LSS-13 part is unused and in its original packaging.
Return procedure for DMN3052LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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