Diodes Incorporated DMN3055LFDB-13

Overview

DMN3055LFDB from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, designed for high-efficiency power management with 40 mΩ R_DS(ON) @ V_GS = 4.5 V, 30 V V_DSS, and 5.0 A continuous drain current at T_A = +25°C. It serves as a synchronous rectifier or load switch in compact DC-DC converters.

For engineers reviewing the DMN3055LFDB datasheet, DMN3055LFDB pinout, DMN3055LFDB application, or DMN3055LFDB equivalent, key selection criteria include low-voltage gate drive compatibility (2.5 V threshold), dual-channel integration in 2 mm × 2 mm footprint, thermal performance on FR-4 with 1-inch copper pad (R_θJA = 83 °C/W), and body diode recovery characteristics (t_RR = 7.0 ns).

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection-each channel operates independently with separate drain, source, and gate terminals. Its low R_DS(ON) at 2.5 V gate drive enables operation with modern controller ICs in battery-powered systems.

The device features low input capacitance (C_iss = 458 pF) and fast switching (t_D(ON) = 1.8 ns, t_F = 2.1 ns), minimizing conduction and switching losses in high-frequency buck regulators. The U-DFN2020-6 package provides low thermal resistance to ambient (R_θJA = 83 °C/W) under optimized PCB layout.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type B) is a 2.0 mm × 2.0 mm, 0.65 mm height, leadless surface-mount package with exposed thermal pad. It features six terminals arranged in dual-source configuration for compact dual-switch implementation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3055LFDB, DMN3025LFD-7 offers lower on-resistance but doubles component count and board area, while AOB2036L trades package miniaturization for slightly better R_DS(ON) and established manufacturability-neither matches the integrated dual-channel, 2 mm × 2 mm, 2.5 V–compatible performance envelope.

Availability

DMN3055LFDB is available at Aetrix Electronics and suitable for battery charging circuits, portable power adaptors, and industrial DC-DC converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for DMN3055LFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3055LFDB belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power conversion in portable and industrial equipment where low-voltage gate drive and thermal density are critical.

FAQ

What is the maximum safe operating junction temperature for DMN3055LFDB?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Continuous operation above this limit risks permanent degradation of the silicon die and bond wires. Derating is required above +125°C ambient, with thermal design targeting ≤130°C junction under worst-case load and airflow conditions.

Can DMN3055LFDB be used in automotive applications?

DMN3055LFDB is not AEC-Q101 qualified and lacks PPAP documentation or IATF 16949-certified manufacturing traceability. While its -55°C to +150°C operating range meets automotive ambient requirements, Diodes Incorporated explicitly states that automotive-grade variants require direct consultation and custom qualification-this part is intended for industrial and consumer power management only.

Is the thermal pad on the U-DFN2020-6 package electrically connected?

No-the exposed thermal pad is electrically isolated and must be soldered to a dedicated PCB thermal plane or ground pour. It is not internally connected to any pin; its sole function is heat conduction from the die to the board. Solder mask opening and thermal via placement beneath the pad are required for optimal R_θJA performance.

What is the recommended gate resistor value for 1 MHz switching?

A 6 Ω gate resistor is used in the datasheet's dynamic test conditions (V_GS = 10 V, R_g = 6 Ω), yielding t_R = 2.6 ns and t_F = 2.1 ns. For 1 MHz operation, 4.7–10 Ω balances switching speed against ringing and EMI; values below 3 Ω increase overshoot risk due to the device's 2.1 Ω intrinsic gate resistance and 44 pF Crss.