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Diodes Incorporated DMN3055LFDB-7
- Part No.:
- DMN3055LFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3055LFDB-7.pdf
- Description:
- MOSFET 2N-CH 5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,945
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Product details
Overview
DMN3055LFDB from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, designed for high-efficiency power management with 40 mΩ RDS(ON) @ VGS = 4.5 V, 30 V VDSS, and 5.0 A continuous drain current at TA = +25°C; used in portable power adaptors and DC-DC converters.
For engineers reviewing the DMN3055LFDB datasheet, DMN3055LFDB pinout, DMN3055LFDB application, or DMN3055LFDB equivalent, key selection criteria include low-voltage gate drive compatibility (2.5 V threshold), dual-channel integration for synchronous rectification, thermal performance on FR-4 PCBs, and RoHS/Green compliance for consumer and industrial designs.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single 2.0 mm × 2.0 mm U-DFN2020-6 (Type B) package with exposed thermal pad. Each channel supports independent switching with identical VGS(TH) (0.5–1.5 V), RDS(ON) (32–40 mΩ @ 4.5 V), and fast switching (tr = 2.6 ns, tf = 2.1 ns).
The device operates across –55°C to +150°C junction temperature, with thermal resistance RθJA = 83°C/W (with 1-inch² copper pad) and RθJC = 10°C/W. Its low Ciss (458 pF) and Qg (5.3 nC @ 4.5 V) enable efficient operation in 1–3 MHz DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 5 V–12 V input rail applications without derating. |
| RDS(ON) @ VGS = 4.5 V | 40 mΩ max - Enables <100 mW conduction loss at 5 A, suitable for USB PD and buck converter high-side switches. |
| ID Continuous @ 25°C | 5.0 A - Sustains full load in compact 2A–5A portable power stages with minimal heatsinking. |
| Ciss | 458 pF - Low input capacitance reduces gate drive power and improves efficiency above 1 MHz switching. |
| Qg @ VGS = 4.5 V | 5.3 nC - Minimizes gate charge requirement for low-power microcontroller-driven gate drivers. |
| TJ Range | –55°C to +150°C - Validated for automotive cabin and industrial ambient environments without derating. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm, thermally enhanced with exposed copper pad (D2 = 0.60 mm), RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-current output node; connected to input rail in high-side switch or to inductor in synchronous buck low-side position. |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to ground or SW node depending on topology; electrically isolated from S2. |
| G1 | Gate of Channel 1 | CMOS-compatible control input; requires 2.5 V minimum for partial turn-on, 4.5 V for full RDS(ON) spec. |
| D2 | Drain of Channel 2 | Independent high-current output; enables dual-phase or redundant power path without external isolation. |
| S2 | Source of Channel 2 | Separate return for Channel 2; allows independent current sensing or floating bias configurations. |
| G2 | Gate of Channel 2 | Independent control terminal; supports asynchronous or interleaved switching with separate timing control. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Reduces board area by >40% vs. discrete dual-MOSFET solutions while maintaining channel independence and thermal separation. |
| Low RDS(ON) @ 2.5 V VGS | 75 mΩ max enables operation from 3.3 V logic rails or battery voltages down to 2.8 V without gate boosting. |
| Low Coss and Crss | 50 pF Coss and 44 pF Crss minimize switching losses and EMI in high-frequency synchronous rectifiers. |
| Thermally optimized U-DFN2020-6 | RθJC = 10°C/W enables direct heat transfer to PCB ground plane, supporting 1.36 W dissipation with 1-inch² copper. |
Applications
| Battery Charging Circuit | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Dual-path charging for 2-cell Li-ion packs with independent current regulation per cell. IC Role / Device Role / Timing Role: Dual N-channel switch controlling charge current direction and isolation between input source and parallel battery cells. Use Value: 40 mΩ RDS(ON) limits conduction loss to <1 W at 5 A, extending thermal headroom in sealed portable enclosures. |
Use Scenario: Synchronous rectification in 20–45 W USB-C buck-boost PD sink circuits. IC Role / Device Role / Timing Role: Low-side switch pair in interleaved topology, driven by dedicated PD controller PWM outputs. Use Value: 5.3 nC Qg @ 4.5 V allows clean 3-MHz switching with standard 1-A gate drivers, reducing transformer size. |
| Portable Power Adaptor | Industrial DC-DC Point-of-Load Converter |
|
Use Scenario: Compact 12 V/5 A wall adapter using active clamp flyback with synchronous rectification. IC Role / Device Role / Timing Role: Dual-channel secondary-side rectifier replacing Schottky diodes, controlled by transformer auxiliary winding. Use Value: 0.8 V VSD body diode drop enables >94% efficiency at full load, exceeding DOE VI requirements. |
Use Scenario: 3.3 V/4 A point-of-load regulator in programmable logic controller I/O modules. IC Role / Device Role / Timing Role: High-efficiency buck converter power stage operating at 1.2 MHz with forced PWM mode. Use Value: –55°C to +150°C TJ rating ensures stable RDS(ON) over industrial temperature cycling without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | Lower RDS(ON) (25 mΩ @ 4.5 V) but higher Qg (12.5 nC); same U-DFN2020-6 package. | Better conduction loss at high current, but gate drive power doubles; less suitable for ultra-low-power controllers. | Select when efficiency at >4 A dominates over gate driver capability and cost. |
| AOB2036L | Higher voltage rating (40 V), larger SO-8 package, higher RDS(ON) (36 mΩ @ 4.5 V), no 2.5 V drive support. | Requires PCB redesign; suited for 24 V industrial inputs where 30 V margin is insufficient. | Select only if system input exceeds 30 V or legacy SO-8 footprint must be retained. |
Compared with DMN3055LFDB, DMN3025LFD-7 trades higher gate charge for lower conduction loss, while AOB2036L sacrifices miniaturization and low-voltage drive for wider input voltage range-making DMN3055LFDB optimal for space-constrained, battery-fed 5–12 V systems.
Availability
DMN3055LFDB is available at Aetrix Electronics and suitable for battery charging circuits, USB-C power delivery modules, and portable power adaptors requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMN3055LFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, high-efficiency power conversion in portable and industrial applications where thermal performance and low-voltage gate drive are critical.
FAQ
What is the maximum safe operating temperature for DMN3055LFDB?
The DMN3055LFDB has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal shutdown is not integrated; designers must ensure steady-state power dissipation stays within the derated PD curve (e.g., 0.87 W at TA = +70°C with 1-inch² copper) using layout and airflow analysis.
Can DMN3055LFDB be used in a synchronous buck converter's high-side position?
No-DMN3055LFDB is a dual N-channel MOSFET with no integrated level-shifting or bootstrap circuitry. It lacks the gate drive architecture required for high-side N-channel operation; it is intended for low-side switching, synchronous rectification, or dual low-side configurations where both sources are referenced to ground or common nodes.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes-the U-DFN2020-6 (Type B) package is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1. Recommended peak temperature is 260°C for ≤30 seconds, and the NiPdAu finish ensures reliable solderability using standard SnAgCu pastes and stencil-defined thermal pad patterns.
Does DMN3055LFDB support 2.5 V logic-level gate drive across its full temperature range?
Yes-VGS(TH) is specified from 0.5 V to 1.5 V at 25°C and remains functional down to –55°C (Figure 8 shows VGS(TH) ≈ 0.7 V at –55°C). At 2.5 V VGS, RDS(ON) is guaranteed ≤75 mΩ up to +125°C, enabling robust operation across industrial and automotive cabin environments.
DMN3055LFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 458pF @ 15V
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3055LFDB-7 FAQ
1.How can I place an order for DMN3055LFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3055LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3055LFDB-7 reliable?
The price and inventory of DMN3055LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3055LFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN3055LFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3055LFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3055LFDB-7?
DMN3055LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3055LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3055LFDB-7?
For technical support, including DMN3055LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3055LFDB-7 requirements.
6.How does Aetrix verify that DMN3055LFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN3055LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3055LFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN3055LFDB-7?
All DMN3055LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3055LFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3055LFDB-7 part is unused and in its original packaging.
Return procedure for DMN3055LFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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