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Diodes Incorporated DMN3055LFDBQ-13
- Part No.:
- DMN3055LFDBQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3055LFDBQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,291
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Product details
Overview
DMN3055LFDBQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 30V VDSS, 40mΩ RDS(ON) @ 4.5V VGS, and 5.0A continuous drain current at +25°C. It is AEC-Q101 qualified and designed for automotive battery charging, DC-DC converters, and portable power adaptors.
For engineers reviewing the DMN3055LFDBQ-13 datasheet, DMN3055LFDBQ-13 pinout, DMN3055LFDBQ-13 application, or DMN3055LFDBQ-13 equivalent, key selection criteria include low RDS(ON) at 2.5V/4.5V gate drive, fast switching (tF = 2.1ns), and thermal performance (RθJA = 83°C/W on enhanced pad layout).
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single compact U-DFN2020-6 (Type B) leadless package with exposed thermal pad. Each channel supports independent gate control and shares common source terminals per channel pair (S1/G1/D1 and S2/G2/D2), enabling half-bridge or dual-switch topologies.
It operates with gate threshold voltage VGS(TH) of 0.5–1.5V and delivers 32mΩ typical RDS(ON) at 4.5V VGS, while maintaining low input capacitance (Ciss = 458pF) and fast turn-off delay (tD(OFF) = 9.5ns), critical for high-frequency synchronous rectification in automotive DC-DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V automotive rail protection and 24V system compatibility. |
| RDS(ON) @ 4.5V | 40mΩ max - Enables <160mW conduction loss at 2A, supporting thermally constrained space-constrained modules. |
| RDS(ON) @ 2.5V | 75mΩ max - Ensures usable on-resistance under low-voltage logic-level drive (e.g., microcontroller GPIO). |
| ID (TA = +25°C) | 5.0A - Continuous current rating with FR-4 board and 1-inch² copper pad, suitable for medium-power buck converter switches. |
| Ciss | 458pF - Low input capacitance reduces gate drive power and enables >1MHz switching without excessive driver stress. |
| tD(OFF) | 9.5ns - Short turn-off delay minimizes cross-conduction risk in synchronous rectifiers and half-bridge drivers. |
| Qg @ 4.5V | 5.3nC - Low total gate charge allows efficient driving with low-side gate drivers like TC4427 or similar. |
| TJ Range | −55°C to +150°C - Full automotive temperature range compliance for under-hood and infotainment power management. |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0mm × 2.0mm × 0.6mm leadless surface-mount package with six terminals and an exposed thermal pad (D1/D2 side). It features NiPdAu-plated copper leads, moisture sensitivity level 1, and UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Main current path for first MOSFET; connected to high-side switch node in dual-phase configurations. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or low-side return in half-bridge layouts. |
| G1 | Gate of Channel 1 | Control input for Channel 1; requires 0.5–1.5V threshold and 5.3nC total charge for full enhancement. |
| D2 | Drain of Channel 2 | Independent drain terminal for second MOSFET; enables dual-load switching or phase interleaving. |
| S2 | Source of Channel 2 | Isolated source node for Channel 2; allows floating or separate reference design (e.g., high-side bootstrap). |
| G2 | Gate of Channel 2 | Independent gate control; supports asynchronous or synchronized dual-channel operation without shared gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V | 75mΩ max enables direct MCU GPIO drive without level-shifting in low-power auxiliary rails. |
| Fast switching speed | tF = 2.1ns and tD(OFF) = 9.5ns support >2MHz PWM in compact DC-DC converters. |
| AEC-Q101 qualification | Validated for automotive use with PPAP documentation and IATF 16949 manufacturing. |
| Green, halogen-free construction | Meets RoHS 3 (2015/863/EU) and contains <900ppm Br/Cl and <1000ppm Sb for eco-compliant vehicle assembly. |
| Thermally optimized package | RθJA = 83°C/W (enhanced layout) enables 1.36W dissipation at +25°C ambient for sustained operation. |
Applications
| Battery Charging Circuit | Automotive DC-DC Converter |
|---|---|
Use Scenario: Dual-MOSFET synchronous rectifier in 12V-to-5V/3.3V buck converter for ADAS camera module power supply. IC Role / Device Role / Timing Role: Dual N-channel switch providing low-loss, high-efficiency power conversion with independent gate timing control. Use Value: 40mΩ RDS(ON) at 4.5V reduces conduction loss by >35% vs. discrete diode solutions, improving thermal margin in sealed enclosures. | Use Scenario: High-side/low-side switch pair in 48V-to-12V bidirectional DC-DC stage for mild-hybrid vehicle energy recovery. IC Role / Device Role / Timing Role: Dual-channel power switch enabling precise dead-time control and zero-voltage switching (ZVS) capability. Use Value: 9.5ns tD(OFF) and 2.1ns tF minimize shoot-through risk during transition, increasing reliability in high-reliability traction subsystems. |
| Portable Power Adaptor | Power Management Unit (PMU) |
Use Scenario: Dual-output synchronous buck controller for USB-C PD adapter supplying 5V/3A and 9V/2A simultaneously. IC Role / Device Role / Timing Role: Independent channel switching for parallel output regulation with minimal cross-talk. Use Value: Matched RDS(ON) and gate charge ensure balanced load sharing and thermal distribution across both outputs. | Use Scenario: Load switch and battery protection circuit in automotive infotainment head unit PMU. IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and overcurrent protection switch with integrated body diode forward conduction. Use Value: 1.2V VSD max at 2A ensures <2.4W dissipation during fault conditions, supporting robust short-circuit withstand capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | Single-channel, 30V, 25mΩ @ 4.5V, same U-DFN2020-6 package but no dual configuration. | Requires two devices for dual functionality; higher board area and gate drive complexity. | Select when independent thermal management per channel is required or when layout constraints favor discrete placement. |
| NTMFS4C02NT1G | Single N-channel, 30V, 2.2mΩ @ 10V, SO-8 package, not AEC-Q101 qualified. | Larger footprint, higher RDS(ON) at 2.5V (not specified), unsuitable for automotive PPAP programs. | Use only in non-automotive industrial or consumer applications where AEC-Q101 is not mandated. |
Compared with DMN3025LFD-7 and NTMFS4C02NT1G, the DMN3055LFDBQ-13 uniquely delivers dual-channel integration, AEC-Q101 qualification, and verified 2.5V logic-level drive in a 2.0×2.0mm footprint-enabling space- and reliability-critical automotive power stages without compromising gate control flexibility.
Availability
DMN3055LFDBQ-13 is available at Aetrix Electronics and suitable for automotive battery charging, DC-DC converter design, and portable power adaptor development requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN3055LFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power conversion in engine control units, ADAS systems, and in-vehicle infotainment power supplies.
FAQ
What is the maximum junction temperature and thermal resistance of DMN3055LFDBQ-13?
The DMN3055LFDBQ-13 has a maximum junction temperature of +150°C and a thermal resistance of RθJA = 83°C/W when mounted on an FR-4 PCB with a 1-inch² copper pad. Its RθJC is 10°C/W, indicating strong thermal coupling to the PCB via the exposed pad. These values are measured per Note 6 in the datasheet and validated under JEDEC JESD51-2 standards.
Does DMN3055LFDBQ-13 support logic-level gate drive at 2.5V?
Yes - the device guarantees RDS(ON) ≤ 75mΩ at VGS = 2.5V and ID = 2A, with a gate threshold voltage VGS(TH) ranging from 0.5V to 1.5V. This enables direct drive from 2.5V/3.3V microcontrollers without external level shifters, confirmed by Figure 4 and Table "Electrical Characteristics" in DS42694 Rev. 2-2.
How is the pin numbering oriented on the U-DFN2020-6 (Type B) package?
Pin 1 (D1) is located at the bottom-left corner when the marking "YWX" is read left-to-right with the date code facing upward. The pinout order is D1–S1–G1–D2–S2–G2 in clockwise sequence, with the thermal pad centered on the underside. This orientation matches the mechanical drawing on page 7 of DS42694 Rev. 2-2 and Diodes' official U-DFN2020-6 Type B outline.
Is DMN3055LFDBQ-13 suitable for synchronous rectification in automotive buck converters?
Yes - its 40mΩ RDS(ON) at 4.5V, 2.1ns fall time, and 9.5ns turn-off delay enable efficient synchronous rectification up to ~2MHz in 12V automotive buck stages. The dual-channel architecture allows independent control of high-side and low-side switches, and AEC-Q101 qualification ensures suitability for safety-critical power rails per ISO 26262 ASIL-B system requirements.
DMN3055LFDBQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 458pF @ 15V
- Power - Max:
- 810mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3055LFDBQ-13 FAQ
1.How can I place an order for DMN3055LFDBQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3055LFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3055LFDBQ-13 reliable?
The price and inventory of DMN3055LFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3055LFDBQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3055LFDBQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3055LFDBQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3055LFDBQ-13?
DMN3055LFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3055LFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3055LFDBQ-13?
For technical support, including DMN3055LFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3055LFDBQ-13 requirements.
6.How does Aetrix verify that DMN3055LFDBQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3055LFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3055LFDBQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3055LFDBQ-13?
All DMN3055LFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3055LFDBQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3055LFDBQ-13 part is unused and in its original packaging.
Return procedure for DMN3055LFDBQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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