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Diodes Incorporated DMN3055LFDBQ-7
- Part No.:
- DMN3055LFDBQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3055LFDBQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,048
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Product details
Overview
DMN3055LFDBQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 30V VDSS, 40mΩ RDS(ON) @ 4.5V VGS, and 5.0A continuous drain current at +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive battery charging, DC-DC converters, and portable power adaptors.
For engineers reviewing the DMN3055LFDBQ-7 datasheet, DMN3055LFDBQ-7 pinout, DMN3055LFDBQ-7 application, or DMN3055LFDBQ-7 equivalent, key selection criteria include low-voltage gate drive compatibility (2.5V/4.5V), dual-channel integration in 2.0×2.0mm footprint, thermal performance on FR-4 with 1-inch copper pad (RθJA = 83°C/W), and automotive-grade reliability under IATF 16949 manufacturing.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single ultra-compact U-DFN2020-6 (Type B) package with exposed thermal pad. Each channel operates independently with identical 30V breakdown voltage, 0.5–1.5V gate threshold, and body diode forward voltage of 0.8–1.2V at 2A.
It supports fast switching (tD(ON) = 1.8ns, tF = 2.1ns) and low dynamic losses via Ciss = 458pF, Qg = 5.3nC @ 4.5V, and Rg = 2.1Ω - optimized for high-frequency synchronous rectification and load switching in space-constrained automotive power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Supports 12V/24V automotive systems with margin against load-dump transients. |
| RDS(ON) | 40mΩ @ 4.5V VGS - Enables <120mW conduction loss at 5A, critical for thermally limited PCB layouts. |
| ID (max) | 5.0A @ +25°C - Sustains peak load currents in USB-C PD adapters and battery protection circuits. |
| Ciss | 458pF - Low input capacitance reduces gate drive power and enables efficient operation with low-side drivers. |
| Qg | 5.3nC @ 4.5V - Minimizes switching energy and allows use with low-current gate drivers in compact DC-DC controllers. |
| RθJA | 83°C/W (with 1"² copper) - Enables 1.36W power dissipation at +70°C ambient without active cooling. |
| TJ range | −55°C to +150°C - Meets extended temperature requirements for under-hood automotive electronics. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, thermally enhanced with exposed copper pad. RoHS-compliant, halogen-free, NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to power rail or load. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or floating return path; shares thermal pad with S2. |
| G1 | Gate of Channel 1 | CMOS-compatible control input; requires 2.5V–12V drive; decoupling capacitor recommended near pin. |
| D2 | Drain of Channel 2 | Independent power switch node; enables dual-phase or redundant switching without cross-talk. |
| S2 | Source of Channel 2 | Separate return path for Channel 2; allows independent current sensing or floating configuration. |
| G2 | Gate of Channel 2 | Isolated control input; identical timing and drive requirements as G1; no internal coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 2.5V | 75mΩ - Enables reliable turn-on from 3.3V logic or microcontroller GPIO in battery-powered systems. |
| Fast switching speed | tF = 2.1ns - Reduces switching losses in >1MHz DC-DC topologies such as buck converters for ADAS sensors. |
| AEC-Q101 qualification | Qualified per stress test standard for automotive discrete semiconductors - ensures reliability in safety-critical subsystems. |
| Thermally optimized package | RθJC = 10°C/W - Direct heat transfer from junction to PCB copper pad improves long-term stability in sealed enclosures. |
| Low leakage | IDSS ≤ 1.0μA @ 30V - Prevents standby current accumulation in always-on vehicle modules (e.g., CAN wake-up circuits). |
Applications
| Battery Charging Circuits | Automotive DC-DC Converters |
|---|---|
|
Use Scenario: Dual-MOSFET synchronous rectification in 12V-to-5V/3.3V buck converters for infotainment head units. IC Role / Device Role / Timing Role: High- and low-side power switches replacing diodes to reduce conduction loss and improve efficiency above 85%. Use Value: 40mΩ RDS(ON) at 4.5V enables <0.5W total conduction loss at 5A output, extending thermal margin in confined dash-mount enclosures. |
Use Scenario: Input-side reverse-polarity and overvoltage protection in 24V commercial vehicle telematics modules. IC Role / Device Role / Timing Role: Back-to-back configured dual N-channel MOSFETs acting as ideal diode controller interface for bidirectional fault blocking. Use Value: Independent gate control (G1/G2) allows precise sequencing during hot-swap events, preventing latch-up during battery disconnect/reconnect cycles. |
| Portable Power Adaptors | Power Management Functions |
|
Use Scenario: Output OR-ing and load sharing in dual-input USB-C PD power banks with Li-ion and external adapter inputs. IC Role / Device Role / Timing Role: Dual-channel load switch managing independent input paths with minimal voltage drop and fast enable/disable response. Use Value: 2.5V gate threshold ensures full enhancement using 3.3V system rails; 75mΩ RDS(ON) limits dropout to <180mV at 2.4A (USB BC 1.2). |
Use Scenario: Smart battery disconnect in automotive body control modules (BCM) for sleep-mode current isolation. IC Role / Device Role / Timing Role: Dual-channel e-fuse replacement providing programmable current limiting and thermal foldback via external sense resistor feedback. Use Value: Matched RDS(ON) between channels ensures balanced current sharing in parallel configurations; 150°C max TJ supports sustained operation during cabin temperature excursions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | Lower RDS(ON) (25mΩ @ 4.5V) but higher Qg (14.5nC); same U-DFN2020-6 package. | Better conduction efficiency at high current; less suitable for high-frequency (>2MHz) switching due to gate charge penalty. | Select when thermal budget dominates over switching frequency constraints - e.g., 12V starter-battery backup systems. |
| NTMFS4C02NT1G | Higher VDSS (40V), lower RDS(ON) (1.9mΩ @ 10V), but larger SO-8FL package and no AEC-Q101 rating. | Not automotive-qualified; unsuitable for PPAP-driven programs; requires larger board area and different layout rules. | Choose only for industrial or consumer designs where 40V margin and ultra-low RDS(ON) outweigh qualification and size requirements. |
Compared with DMN3025LFD-7 and NTMFS4C02NT1G, the DMN3055LFDBQ-7 uniquely balances AEC-Q101 compliance, 2.0×2.0mm footprint, 2.5V gate drive capability, and 40mΩ RDS(ON) - making it optimal for space- and qualification-constrained automotive power management where both efficiency and reliability are non-negotiable.
Availability
DMN3055LFDBQ-7 is available at Aetrix Electronics and suitable for automotive battery charging, DC-DC converter design, and portable power adaptor development requiring stable component supply across production lifecycles.
Supply support for DMN3055LFDBQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN3055LFDBQ-7 belongs to Diodes' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, low-voltage switching in battery management, lighting, and power conversion systems within vehicles.
FAQ
What is the maximum continuous drain current for DMN3055LFDBQ-7 at +70°C ambient?
The maximum continuous drain current is 4.0A at +70°C ambient temperature when mounted on an FR-4 PCB with 2oz copper and minimum recommended pad layout. This derating reflects thermal limitations imposed by RθJA = 132°C/W under baseline conditions; using a 1-inch square copper pad increases the rating to 4.0A at +70°C with RθJA = 83°C/W.
Does DMN3055LFDBQ-7 support 3.3V logic-level gate drive?
Yes - the device has a gate threshold voltage range of 0.5V to 1.5V and achieves 75mΩ RDS(ON) at VGS = 2.5V, ensuring full enhancement with standard 3.3V microcontroller outputs. At 3.3V VGS, typical RDS(ON) is ~50mΩ, enabling robust switching in battery-powered and low-voltage control applications.
How is thermal performance validated for this U-DFN2020-6 package?
Thermal performance is validated per JEDEC JESD51 standards using two test configurations: (1) FR-4 board with minimum pad layout (RθJA = 132°C/W), and (2) FR-4 board with 1-inch square copper plate (RθJA = 83°C/W). The exposed thermal pad must be soldered to a solid copper pour for optimal heat transfer; thermal resistance to case (RθJC) is 10°C/W.
Is DMN3055LFDBQ-7 suitable for reverse polarity protection in automotive systems?
Yes - its dual N-channel structure supports back-to-back configuration for bidirectional reverse-polarity protection. With AEC-Q101 qualification, −55°C to +150°C operating range, and 30V VDSS, it meets ISO 16750-2 transient requirements for 12V systems and provides low-loss, fast-response protection in BCM and telematics modules.
DMN3055LFDBQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 458pF @ 15V
- Power - Max:
- 810mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN3055LFDBQ-7 FAQ
1.How can I place an order for DMN3055LFDBQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3055LFDBQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3055LFDBQ-7 reliable?
The price and inventory of DMN3055LFDBQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3055LFDBQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3055LFDBQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3055LFDBQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3055LFDBQ-7?
DMN3055LFDBQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3055LFDBQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3055LFDBQ-7?
For technical support, including DMN3055LFDBQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3055LFDBQ-7 requirements.
6.How does Aetrix verify that DMN3055LFDBQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3055LFDBQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3055LFDBQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3055LFDBQ-7?
All DMN3055LFDBQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3055LFDBQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3055LFDBQ-7 part is unused and in its original packaging.
Return procedure for DMN3055LFDBQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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