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Diodes Incorporated DMN3060LVT-13

Part No.:
DMN3060LVT-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN3060LVT-13.pdf
Description:
MOSFET 2N-CH 30V 3.6A TSOT23-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,176

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Product details

Overview

DMN3060LVT-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 60mΩ RDS(ON) @ VGS=10V, and 3.6A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMN3060LVT-13 datasheet, DMN3060LVT-13 pinout, DMN3060LVT-13 application, or DMN3060LVT-13 equivalent, key selection criteria include low gate charge (5.6nC @ 4.5V), fast switching (tR = 30.8ns), thermal resistance (108°C/W with copper pad), and dual-channel integration for space-constrained synchronous buck or load-switch designs.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing a common source configuration in a single TSOT26 package, enabling compact half-bridge or dual-load-switch topologies. Its 0.7–1.8V gate threshold supports 3.3V and 4.5V logic-level drive without level-shifting.

The device delivers low dynamic losses via 395pF input capacitance (Ciss) and 26pF reverse transfer capacitance (Crss), while maintaining low leakage (<1µA IDSS, <100nA IGSS) across –55°C to +150°C operating range.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - supports 24V rail systems with 20% margin against transients
RDS(ON) @ 10V 42–48mΩ - enables <150mW conduction loss at 3.1A in buck high-side switch
RDS(ON) @ 4.5V 60–100mΩ - ensures full enhancement with standard 3.3V/4.5V microcontroller GPIO
Qg @ 4.5V 5.6nC - reduces gate drive power and enables >1MHz PWM operation
tR/tF 30.8ns / 2.7ns - minimizes switching transition losses in high-frequency converters
RθJA (with pad) 108°C/W - allows 1.16W dissipation at +70°C ambient with minimal PCB copper area
ID (max) 3.6A @ +25°C - sustains continuous output current in 5V/3A point-of-load regulators

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6mm) with exposed thermal pad; RoHS-compliant matte tin finish on copper leadframe; moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (D1) Drain of Q1 High-side switch node; connects to input rail in buck or load-switch topology
2 (S1) Source of Q1 Common source node for both FETs; ties to ground or output in synchronous rectifier
3 (G1) Gate of Q1 Independent control input for first channel; requires <5.6nC drive per switching cycle
4 (D2) Drain of Q2 Second switch node; used for dual independent loads or complementary drive
5 (S2) Source of Q2 Shared source terminal - electrically tied to S1 internally in this dual-device layout
6 (G2) Gate of Q2 Independent control input for second channel; fully isolated gate drive path

Key Features

Feature Design Value
Low RDS(ON) @ 4.5V 60mΩ - enables efficient 3.3V-driven load switching without external level shifters
Low Ciss & Crss 395pF / 26pF - reduces Miller effect and improves EMI performance in high-dV/dt environments
Fast turn-off tF = 2.7ns - limits shoot-through risk in half-bridge configurations with tight dead-time control
Thermal robustness RθJA = 108°C/W with 1-in² copper - supports sustained 1.16W operation in industrial ambient
Green packaging Halogen- and antimony-free molding compound (Br+Cl <1500ppm, Sb <1000ppm) - meets IPC-1752A Class 3

Applications

LED Backlight Driver Synchronous Buck Converter

Use Scenario: Driving parallel white LED strings in LCD displays using PWM dimming at 1–20kHz.

IC Role / Device Role / Timing Role: High-side current-switching MOSFET controlling LED current path with precise on/off timing.

Use Value: 60mΩ RDS(ON) @ 4.5V ensures <120mW loss at 2A string current, minimizing thermal derating in thin bezel designs.

Use Scenario: High-density 5V-to-3.3V point-of-load regulator for FPGA I/O banks requiring <3A output.

IC Role / Device Role / Timing Role: Integrated dual N-channel switch enabling compact synchronous rectification with shared-source layout.

Use Value: Matched channel characteristics and 5.6nC Qg support >500kHz operation with <3% efficiency penalty vs. discrete solutions.

USB-C Load Switch Industrial Sensor Power Gating

Use Scenario: Dual-rail power enable for USB-C port controllers with separate VBUS and CC line protection.

IC Role / Device Role / Timing Role: Independent dual-channel load switch providing controlled inrush limiting and fault isolation.

Use Value: Low 100nA IGSS and <1µA IDSS ensure <1µA standby leakage - critical for battery-backed USB-C accessories.

Use Scenario: Power gating for 4–20mA loop-powered sensors in hazardous-area PLC modules.

IC Role / Device Role / Timing Role: Isolated channel switch enabling selective sensor activation without disturbing shared analog reference rails.

Use Value: –55°C to +150°C operating range and 30V rating support direct connection to 24V industrial bus with transient immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3060LSD-13 Same die, but in SOT-363 package with higher RθJA (190°C/W) and no thermal pad Limited to <0.6W dissipation; unsuitable for >2A continuous loads Select when board space permits larger footprint and thermal budget is relaxed
AOB410L Single-channel 30V MOSFET (4.5mΩ @ 10V) in TSOP-6; no dual integration Requires two devices and extra routing for dual-load control; higher BOM count Choose only if higher current (>5A) per channel is required and dual integration is unnecessary

Compared with DMN3060LVT-13, DMN3060LSD-13 trades thermal performance for legacy compatibility, while AOB410L sacrifices integration for lower RDS(ON) - making DMN3060LVT-13 optimal for space-constrained, thermally managed dual-switch applications below 3.6A.

Availability

DMN3060LVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and industrial power management systems requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMN3060LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN3060LVT belongs to Diodes' Logic-Level Power MOSFET product line, engineered specifically for high-efficiency, low-voltage power conversion in portable, automotive, and industrial applications where gate drive simplicity and thermal density are critical.

FAQ

What is the maximum safe operating junction temperature for DMN3060LVT-13?

The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A108. Operation above +125°C requires derating of continuous current based on Figure 5 and Figure 7 in DS41714 Rev. 3-2, with RDS(ON) increasing ~1.5× at +125°C versus +25°C. Thermal design must maintain TJ ≤ 135°C for 10-year reliability in industrial use.

Can DMN3060LVT-13 be used in a synchronous rectifier configuration?

Yes - its dual N-channel structure with shared source terminals supports synchronous rectifier implementation in flyback or forward converters. However, external gate drivers with adaptive dead-time control are required to prevent shoot-through, as the device lacks integrated bootstrap or level-shift circuitry. Gate drive voltage must remain within ±12V VGSS limit.

Is the TSOT26 package of DMN3060LVT-13 compatible with standard SMT reflow profiles?

Yes - the TSOT26 package is qualified for IPC/JEDEC J-STD-020D Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C for ≤30 seconds. Recommended profile follows SnPb-equivalent ramp rates: preheat (60–120°C, 60–120s), soak (150–200°C, 60–120s), reflow (peak 235–245°C, 10–30s), cooling (≤6°C/s).

Does DMN3060LVT-13 include integrated ESD protection on gate terminals?

No - the device has no built-in gate-oxide ESD protection diodes. Per DS41714 Section 1, gate terminals require external protection: series gate resistors (≥10Ω), TVS clamps (±12V), and handling per ANSI/ESD S20.20. Gate-source voltage must not exceed ±12V during assembly or operation to avoid irreversible oxide damage.

DMN3060LVT-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
395pF @ 15V
Power - Max:
830mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-23-6

DMN3060LVT-13 FAQ

1.How can I place an order for DMN3060LVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3060LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3060LVT-13 reliable?

The price and inventory of DMN3060LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3060LVT-13 is usually 5 days.

3.What payment methods are accepted for DMN3060LVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3060LVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3060LVT-13?

DMN3060LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3060LVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3060LVT-13?

For technical support, including DMN3060LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3060LVT-13 requirements.

6.How does Aetrix verify that DMN3060LVT-13 is sourced from the original manufacturer or authorized distributors?

All DMN3060LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3060LVT-13 meets industry standards.

7.What is the process for return or replacement of DMN3060LVT-13?

All DMN3060LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3060LVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3060LVT-13 part is unused and in its original packaging.

Return procedure for DMN3060LVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3060LVT-13 Tags

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