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Diodes Incorporated DMN3060LW-13
- Part No.:
- DMN3060LW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN3060LW-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:6,125
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Product details
Overview
DMN3060LW-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 30V VDSS, 60 mΩ RDS(ON) @ VGS = 10V, and 2.6A continuous drain current at TA = +25°C. It serves as a low-voltage power switch in compact DC-DC converters and analog switching circuits where space-constrained board layout and fast switching are critical.
For engineers reviewing the DMN3060LW-13 datasheet, DMN3060LW-13 pinout, DMN3060LW-13 application, or DMN3060LW-13 equivalent, key selection criteria include its 4.5V logic-level gate drive compatibility, 395 pF input capacitance, 5.6 nC total gate charge, and thermal resistance of 195 °C/W on 2 oz copper FR-4 - all essential for optimizing efficiency and thermal margin in portable power rails.
Technical Context
This MOSFET employs planar silicon process technology to achieve low RDS(ON) while maintaining robust body diode performance (VSD = 0.8–1.2 V) and controlled gate charge distribution (Qgd/Qg = 32%). Its threshold voltage range (0.7–1.8 V) ensures reliable turn-on with standard 3.3V/5V logic drivers.
The device is characterized for operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 4.5V. Dynamic parameters - including tr = 30.8 ns and tf = 2.7 ns - reflect optimized channel geometry for high-frequency switching in buck regulators and load switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche; suitable for 24V rail and 5V/3.3V point-of-load applications. |
| RDS(ON) | 60 mΩ @ VGS = 10V - Enables <150 mW conduction loss at 2.6A, critical for thermally constrained SOT323 layouts. |
| ID (continuous) | 2.6 A @ TA = +25°C - Validated under JEDEC-standard FR-4 mounting with 2 oz copper thermal bias; derates to 2.1 A at +70°C. |
| Qg | 5.6 nC - Low gate charge supports efficient 1–2 MHz switching in synchronous buck stages without excessive driver loss. |
| Ciss | 395 pF - Input capacitance impacts gate drive strength requirements and EMI filtering design in high-dV/dt environments. |
| tr/tf | 30.8 ns / 2.7 ns - Fast rise/fall times reduce switching transition losses but require careful PCB layout to suppress ringing. |
| VGS(TH) | 0.7–1.8 V - Ensures full enhancement with 3.3V microcontroller GPIOs while avoiding spurious turn-on from noise. |
Pinout & Package
Package: SOT323 - surface-mount plastic package measuring 2.15 mm × 2.10 mm × 0.95 mm, with matte tin–annealed copper leadframe, UL 94V-0 rating, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±12 V drive; 3.1 Ω gate resistance limits ringing and simplifies driver selection. |
| 2 (D) | Drain | Main current path output; connected to switched rail or inductor node; shares thermal pad with package bottom. |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to ground or low-side return path in most topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 100 mΩ - Enables use with 3.3V logic without level-shifting, reducing BOM count in battery-powered systems. |
| Low Ciss & Coss | 395 pF / 39 pF - Minimizes capacitive loading on gate driver and reduces energy loss per switching cycle (½·C·V²). |
| Fast switching speed | tD(ON) = 5.8 ns, tF = 2.7 ns - Supports high-frequency operation (>1 MHz) while maintaining low transition loss in compact converters. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IEC 61249-2-21 and automotive supply chain requirements. |
| Thermal performance on FR-4 | RθJA = 195 °C/W with 2 oz copper thermal bias - Allows 0.64 W dissipation at TA = +70°C, enabling higher current in small footprints. |
Applications
| Portable USB Power Switching | Low-Voltage DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Selective power routing to USB peripherals in handheld medical monitors with strict thermal budget. IC Role / Device Role: Load switch controlling 5V bus delivery; driven directly by ARM Cortex-M0+ GPIO. Use Value: 100 mΩ RDS(ON) at 4.5V gate drive limits dropout to <210 mV at 2.1A, preserving bus regulation without external driver. |
Use Scenario: High-side switch in 3.3V-to-1.2V synchronous buck converter for FPGA core supply. IC Role / Device Role: Upper MOSFET in buck topology; switched at 1.2 MHz with bootstrap gate drive. Use Value: 5.6 nC Qg and 30.8 ns tr enable >92% efficiency at 1.5A load while minimizing gate driver power loss. |
| IoT Sensor Node Analog Multiplexing | Automotive Body Control Module Load Switch |
|
Use Scenario: Channel-select switch for 12-bit SAR ADC inputs sharing common reference in wireless sensor nodes. IC Role / Device Role: Low-leakage analog switch isolating sensor signals during sampling. Use Value: 1 µA max IDSS and 0.8 V typ VSD ensure minimal signal distortion and offset error below 1 LSB at 3.3V supply. |
Use Scenario: Controlled power delivery to LED interior lighting in automotive BCM with CAN-triggered dimming. IC Role / Device Role: Low-side switch driving 200 mA LED strings; monitored via current-sense resistor. Use Value: –55°C to +150°C operating range and AEC-Q101 qualification readiness support under-hood reliability without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LW-7 | Lower RDS(ON) (25 mΩ @ 10V), higher Qg (8.5 nC), same SOT323 package | Better conduction loss but demands stronger gate driver; less suitable for ultra-low-power sleep modes | Prefer when continuous current exceeds 2.5A and thermal headroom allows higher driver loss. |
| AO3400 | Higher RDS(ON) (44 mΩ @ 10V), larger SOT23 package, 12V VGSS rating | Less compact footprint; higher thermal resistance (220 °C/W); not qualified for automotive temp range | Select only if cost sensitivity outweighs size/thermal constraints and AEC-Q101 compliance is unnecessary. |
Compared with DMN3060LW-13, DMN3025LW-7 trades higher gate drive demand for lower conduction loss, while AO3400 sacrifices thermal performance and automotive suitability for broader distributor availability - making DMN3060LW-13 optimal for space- and efficiency-critical 3.3V/5V load switching.
Availability
DMN3060LW-13 is available at Aetrix Electronics and suitable for portable power management, IoT sensor node analog switching, and automotive body control module load switching requiring stable component supply and consistent SOT323 tape-and-reel logistics.
Supply support for DMN3060LW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
DMN3060LW-13 belongs to Diodes' logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in space-constrained consumer, industrial, and automotive electronics.
FAQ
What is the maximum safe operating voltage for DMN3060LW-13?
The absolute maximum drain-source voltage (VDSS) is 30 V DC, verified per DS41988 Rev. 2–2. Operation above this rating risks avalanche breakdown and irreversible damage. For 24V systems, a 20% derating margin is recommended, limiting steady-state VDS to ≤24 V with transient clamping.
Can DMN3060LW-13 be driven directly by a 3.3V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(TH)) ranges from 0.7 V to 1.8 V, and it delivers 100 mΩ RDS(ON) at VGS = 4.5 V. At 3.3V, typical RDS(ON) is ~140 mΩ (per Figure 4), sufficient for ≤1.5A loads with acceptable conduction loss in intermittent-duty applications.
Is DMN3060LW-13 qualified for automotive applications?
DMN3060LW-13 is not AEC-Q101 qualified out-of-box, but Diodes Incorporated states it is manufactured in IATF 16949-certified facilities and supports PPAP for automotive-grade variants. Customers requiring formal qualification must contact Diodes' automotive team to request AEC-Q101-tested versions (e.g., DMN3060LWQ-13).
What is the thermal resistance of DMN3060LW-13 on standard PCB?
When mounted on FR-4 with 2 oz copper and thermal bias to a 1-inch square copper plate, RθJA is 195 °C/W (DS41988 p.2). On minimal-pad FR-4 (no thermal bias), RθJA rises to 251 °C/W. Layout must include solder mask defined thermal pads under the package body to achieve the lower value.
DMN3060LW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.6 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 395 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN3060LW-13 FAQ
1.How can I place an order for DMN3060LW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3060LW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3060LW-13 reliable?
The price and inventory of DMN3060LW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3060LW-13 is usually 5 days.
3.What payment methods are accepted for DMN3060LW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3060LW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3060LW-13?
DMN3060LW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3060LW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3060LW-13?
For technical support, including DMN3060LW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3060LW-13 requirements.
6.How does Aetrix verify that DMN3060LW-13 is sourced from the original manufacturer or authorized distributors?
All DMN3060LW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3060LW-13 meets industry standards.
7.What is the process for return or replacement of DMN3060LW-13?
All DMN3060LW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3060LW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3060LW-13 part is unused and in its original packaging.
Return procedure for DMN3060LW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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