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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3060LW-7

Name: DMN3060LW-7
Brand: Diodes Incorporated
SKU: DMN3060LW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3060LW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN3060LW-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT323 T&R

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3060LW-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT323 package, featuring 60mΩ R_DS(ON) at V_GS = 10V and 100mΩ at V_GS = 4.5V, rated for 2.6A continuous drain current at T_A = +25°C, and optimized for high-efficiency DC-DC converters and power management switches.

For engineers reviewing the DMN3060LW-7 datasheet, DMN3060LW-7 pinout, DMN3060LW-7 application, or DMN3060LW-7 equivalent, key selection criteria include low gate charge (5.6nC), fast switching (t_D(ON) = 5.8ns), thermal resistance (R_θJA = 195°C/W on 2oz copper), body diode forward voltage (0.8–1.2V), and AEC-Q101 readiness for automotive-grade designs.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate threshold voltage of 0.7–1.8V, enabling reliable turn-on from standard 3.3V and 5V logic-level drivers. Its low input capacitance (C_iss = 395pF) and 3.1Ω gate resistance support clean, low-overshoot switching waveforms in high-frequency buck regulators.

The device integrates a monolithic body diode with 0.68A maximum forward current and exhibits normalized R_DS(ON) variation ≤1.8× over –55°C to +150°C junction range-critical for thermally constrained portable and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum drain-source blocking voltage; supports 24V rail systems with margin.
R_DS(ON) @ V_GS = 10V	60mΩ - Enables <150mW conduction loss at 2A, reducing thermal load in compact layouts.
R_DS(ON) @ V_GS = 4.5V	100mΩ - Ensures usable on-resistance with 3.3V/5V microcontroller GPIO drive.
Q_g	5.6nC - Low total gate charge minimizes driver power and enables >1MHz PWM operation.
t_D(ON)	5.8ns - Short turn-on delay improves timing control in synchronous rectification and current-sense circuits.
P_D (2oz Cu)	0.64W - Specifies max steady-state dissipation on industry-standard FR-4 PCB with thermal bias.
V_GS(TH)	0.7–1.8V - Threshold range ensures robust logic-level compatibility while avoiding false turn-on from noise.

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), moisture sensitivity level 1, matte tin–annealed leadframe, UL 94V-0 rated molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives voltage to modulate channel conductivity; requires <100nA leakage compliance per datasheet.
Drain (D)	High-side current path	Connected to switched rail or inductive load; handles up to 30V and pulsed 18A.
Source (S)	Reference node / return path	Serves as common reference for gate drive and current sensing; hosts integrated body diode anode.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	100mΩ enables efficient 3.3V-driven load switching without level-shifting circuitry.
Fast switching speed	Combined t_D(ON) + t_R = 36.6ns reduces switching losses in >500kHz DC-DC topologies.
Low input capacitance	C_iss = 395pF limits gate drive current demand and EMI generation during transitions.
Green, halogen-free construction	Meets IEC 61249-2-21 and JEDEC J-STD-020; <900ppm Br/Cl, <1000ppm Sb.
Thermal performance	R_θJA = 195°C/W on 2oz Cu allows 0.64W dissipation without heatsink in space-constrained modules.

Applications

USB Power Delivery Switching

Portable Device Load Switch

Use Scenario: Selective 5V/9V/15V rail enablement in USB-C PD sink applications with tight thermal budgets.

IC Role / Device Role: High-side load switch controlling power delivery to downstream PMICs or battery chargers.

Use Value: 100mΩ R_DS(ON) at 4.5V ensures <200mV dropout at 2A, preserving voltage headroom for sensitive analog rails.

Use Scenario: Controlled power-up sequencing for Bluetooth SoCs, sensors, or display backlights in wearables.

IC Role / Device Role: Logic-controlled power gate isolating subsystems during sleep or fault conditions.

Use Value: Low 5.6nC Q_g permits direct GPIO driving with minimal slew-induced noise on shared supply lines.

Automotive Body Control Module

Industrial Sensor Node Power Switch

Use Scenario: Driving LED indicators, small solenoids, or CAN transceiver bias rails in AEC-Q101–qualified BCMs.

IC Role / Device Role: Robust, temperature-stable switching element operating across –40°C to +125°C ambient.

Use Value: R_DS(ON) drift ≤1.8× over full junction range maintains predictable power loss in unheated enclosures.

Use Scenario: Remote, battery-powered environmental sensor nodes requiring ultra-low quiescent power and long-term reliability.

IC Role / Device Role: Low-leakage (1µA IDSS max) power gate enabling multi-year shelf life and wake-on-event operation.

Use Value: 100nA IGSS at ±12V ensures negligible standby current draw from coin-cell or energy-harvesting sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LW-7	Lower R_DS(ON): 25mΩ @ 10V, 40mΩ @ 4.5V; higher Q_g = 8.5nC	Better conduction efficiency but slower switching; less suitable for >1MHz converters	Select when thermal margin is critical and switching frequency ≤500kHz.
AO3400	Higher R_DS(ON): 42mΩ @ 10V, 55mΩ @ 4.5V; same SOT23 package, not AEC-Q101 qualified	Cost-optimized general-purpose alternative without automotive qualification or green compliance	Choose for non-automotive consumer applications where RoHS3 and halogen-free status are not mandated.

Compared with DMN3060LW-7, DMN3025LW-7 trades higher gate drive demand for lower conduction loss, while AO3400 offers broader availability at the expense of automotive qualification and environmental compliance-making DMN3060LW-7 optimal for space-constrained, thermally sensitive, and regulated industrial or automotive power gates.

Availability

DMN3060LW-7 is available at Aetrix Electronics and suitable for USB Power Delivery switching, portable device load control, and automotive body electronics requiring stable component supply, consistent parametric performance, and full traceability.

Supply support for DMN3060LW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN3060LW belongs to Diodes' logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in space-constrained and thermally demanding applications including portable electronics and automotive sub-systems.

FAQ

What is the maximum safe operating junction temperature for DMN3060LW-7?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of the silicon die and packaging integrity. Derating is required above +125°C ambient, especially under pulsed loads exceeding 10ms duty cycle.

Can DMN3060LW-7 be used in automotive applications?

Yes-DMN3060LW-7 is manufactured in IATF 16949 certified facilities and meets AEC-Q101 stress test requirements for discrete MOSFETs. It is qualified for use in automotive body electronics, infotainment power rails, and lighting controls, provided PPAP documentation is obtained through Diodes Incorporated or authorized distributors.

Is the SOT323 package compatible with standard SOT23 reflow profiles?

Yes-the SOT323 footprint is mechanically compatible with SOT23 land patterns, but its smaller pad dimensions (E1 = 1.15–1.35mm vs. SOT23's 1.4–1.6mm) require precise stencil aperture design. Reflow must follow J-STD-020 Level 1 profile, with peak temperature ≤260°C and time above liquidus ≤60 seconds.

Does DMN3060LW-7 have integrated ESD protection?

No-DMN3060LW-7 does not include on-die ESD protection structures beyond inherent MOSFET gate oxide robustness. External TVS diodes or series resistors are recommended for gate inputs exposed to handling or system-level ESD events, particularly in handheld or connector-accessible designs.

DMN3060LW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.6 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 395 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN3060LW-7 FAQ

1.How can I place an order for DMN3060LW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3060LW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3060LW-7 reliable?

The price and inventory of DMN3060LW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3060LW-7 is usually 5 days.

3.What payment methods are accepted for DMN3060LW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3060LW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3060LW-7?

DMN3060LW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3060LW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3060LW-7?

For technical support, including DMN3060LW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3060LW-7 requirements.

6.How does Aetrix verify that DMN3060LW-7 is sourced from the original manufacturer or authorized distributors?

All DMN3060LW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3060LW-7 meets industry standards.

7.What is the process for return or replacement of DMN3060LW-7?

All DMN3060LW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3060LW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3060LW-7 part is unused and in its original packaging.

Return procedure for DMN3060LW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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