Diodes Incorporated DMN3061LCA3-7

Overview

DMN3061LCA3 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It delivers 4.6 A continuous drain current at V_GS = 8 V, 58 mΩ R_DS(ON) at 4.5 V drive, and operates up to 30 V V_DSS, serving as a compact replacement for legacy small-signal MOSFETs in battery protection circuits.

For engineers reviewing the DMN3061LCA3 datasheet, DMN3061LCA3 pinout, DMN3061LCA3 application, or DMN3061LCA3 equivalent, key selection criteria include its 0.20 mm profile, low gate charge (Q_g = 1.4 nC), and guaranteed R_DS(ON) performance down to 1.8 V gate drive-critical for Li-ion battery management and always-on mobile subsystems.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance with minimal gate charge, enabling fast switching and reduced conduction losses in high-frequency DC-DC and load-switching topologies. Its threshold voltage (V_GS(TH) = 0.65–1.1 V) ensures reliable turn-on from 1.8 V logic rails, while the integrated body diode supports reverse-current paths in bidirectional power control.

The X4-DSN1006-3 (Type C) package provides a thermally efficient, ultra-thin footprint with NiPdAu-plated terminals rated for J-STD-020 Level 1 moisture sensitivity. Thermal resistance R_θJA is 66.4 °C/W under standard FR-4 layout, supporting sustained 3.5 A operation at +70 °C ambient without heatsinking.

Key Specifications

Pinout & Package

Package: X4-DSN1006-3 (Type C), ultra-thin 3-terminal DFN with exposed drain pad. Dimensions: 1.00 mm × 0.60 mm × 0.20 mm (L × W × H), terminal pitch 0.35 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMN3025LFG-7 and AO3400A, the DMN3061LCA3 uniquely balances ultra-thin profile (0.20 mm), competitive R_DS(ON) (58 mΩ), and industry-standard DFN manufacturability-making it optimal for volume production of next-gen compact consumer electronics where Z-height and thermal density are co-constrained.

Availability

DMN3061LCA3 is available at Aetrix Electronics and suitable for battery management systems, handheld power switches, and mobile device protection circuits requiring stable component supply across multi-year product lifecycles.

Supply support for DMN3061LCA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and precision timing solutions for consumer, industrial, and automotive markets.

The DMN3061LCA3 belongs to Diodes' X4-DSN ultra-thin MOSFET product line, engineered specifically for footprint- and height-sensitive portable electronics where traditional SOT-23 or SO-23 packages cannot meet mechanical envelope requirements.

FAQ

What is the maximum safe operating temperature for DMN3061LCA3 in continuous operation?

The DMN3061LCA3 has a junction temperature range of −55 °C to +150 °C. Under standard FR-4 PCB layout (1 in² copper, 2 oz), its thermal resistance is 66.4 °C/W. At 4.4 A and 58 mΩ R_DS(ON), power dissipation is ~1.12 W, resulting in ~75 °C junction rise above ambient-well within safe limits at +70 °C ambient.

Does DMN3061LCA3 require a gate resistor for ESD protection or switching control?

No external gate resistor is required for ESD protection-the device features built-in gate protection diodes. However, a 2–10 Ω series resistor is recommended to dampen ringing and limit peak gate current during fast switching, especially when driven by low-impedance sources like PMIC GPIOs.

Can DMN3061LCA3 be used in automotive cabin applications?

While not AEC-Q101 qualified out-of-box, the DMN3061LCA3 meets core stress-test parameters (T_J = −55 to +150 °C, HBM ESD > 2 kV) and is manufactured in IATF 16949-certified facilities. Diodes offers AEC-Q101-qualified variants (e.g., DMN3061LCA3Q) for production automotive use upon request.

How does the body diode forward voltage affect reverse-current handling in battery backup configurations?

The DMN3061LCA3's body diode exhibits V_SD = 0.7–0.9 V at 0.5 A, enabling controlled reverse conduction during battery switchover. In dual-battery systems, this allows seamless transition without external Schottky diodes-though conduction loss must be accounted for in thermal design at >1 A reverse current.