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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3061S-13

Name: DMN3061S-13
Brand: Diodes Incorporated
SKU: DMN3061S-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3061S-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3061S-13.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN3061S-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 59 mΩ R_DS(ON) @ 10V V_GS, and 2.9A continuous drain current at T_A = +25°C. It serves as a low-side power switch in compact DC-DC converters, load switches, and battery protection circuits.

For engineers reviewing the DMN3061S-13 datasheet, DMN3061S-13 pinout, DMN3061S-13 application, or DMN3061S-13 equivalent, key selection criteria include its 4.5V gate drive compatibility, 98 mΩ R_DS(ON) at 4.5V, 233 pF C_iss, thermal resistance of 161 °C/W (FR-4), and SOT23 footprint constraints.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching speed (t_D(ON) = 0.9 ns, t_F = 2.4 ns) and low gate charge (Q_g = 2.9 nC @ 4.5V). Its gate threshold voltage (V_GS(TH) = 0.5–1.8 V) enables reliable turn-on with 3.3V logic-level signals.

The device integrates a body diode with V_SD = 0.7–1.0 V at 1A, supporting synchronous rectification and reverse-current blocking. Thermal performance is characterized for two PCB layouts: 0.77 W P_D on standard FR-4 (R_θJA = 161 °C/W) and 1.23 W on enhanced copper (R_θJA = 101 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage before avalanche conduction begins.
R_DS(ON) @ 10V	59 mΩ - On-resistance at full gate drive; determines I²R conduction loss in high-current paths.
R_DS(ON) @ 4.5V	98 mΩ - On-resistance compatible with 4.5V microcontroller GPIOs; critical for 5V/3.3V system integration.
C_iss	233 pF - Input capacitance governing gate drive strength requirements and switching transition time.
Q_g @ 4.5V	2.9 nC - Total gate charge needed to fully turn on; directly impacts driver IC sizing and switching loss.
P_D (FR-4)	0.77 W - Max steady-state power dissipation on standard 2oz copper PCB; sets practical current limit under natural convection.
T_J Range	−55 to +150 °C - Junction temperature operating range; supports industrial and extended-temperature applications.

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.9 mm × 1.3 mm × 1.0 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms body diode cathode.
2 (Gate)	Control terminal for channel formation	High-impedance input requiring <2.9 nC charge to switch; sensitive to ESD.
3 (Drain)	Power output node for switched load	Carries full load current; electrically isolated from Source when off; connects to body diode anode.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	98 mΩ enables efficient operation with 3.3V/5V logic drivers without external level-shifting.
Fast switching speed	t_F = 2.4 ns and t_D(OFF) = 10.0 ns reduce transition losses in high-frequency PWM applications.
Low input capacitance	C_iss = 233 pF minimizes gate drive power and simplifies driver selection for space-constrained designs.
Body diode forward voltage	V_SD = 0.7 V typical at 1A supports bidirectional current handling in back-to-back configurations.
Thermal robustness	R_θJA = 161 °C/W on standard FR-4 allows 0.77W dissipation without forced cooling in ambient ≤50°C.

Applications

Battery Protection Circuit

USB Load Switch

Use Scenario: Preventing over-discharge and short-circuit in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side protection switch controlling discharge path; activated by battery management IC during fault conditions.

Use Value: 98 mΩ R_DS(ON) at 4.5V ensures minimal voltage drop during normal operation, preserving battery runtime.

Use Scenario: Enabling/disabling power to USB peripherals in portable devices.

IC Role / Device Role / Timing Role: Controlled power rail switch responding to USB enumeration status or host control signals.

Use Value: Fast 2.4 ns fall time prevents bus glitches during hot-plug events; low leakage (<1 µA) maintains sleep-mode integrity.

DC-DC Converter Synchronous Rectifier

Microcontroller GPIO Interface Driver

Use Scenario: Replacing Schottky diode in buck converter output stage to improve efficiency.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary PWM signal; conducts during low-side phase.

Use Value: 0.7 V V_SD and 98 mΩ R_DS(ON) reduce conduction loss vs. 0.35 V Schottky at 1A, especially below 100 kHz.

Use Scenario: Driving small solenoids, LEDs, or sensors from MCU GPIO pins with limited current capability.

IC Role / Device Role / Timing Role: Logic-level buffer and current amplifier; isolates MCU from inductive loads.

Use Value: 0.5–1.8 V V_GS(TH) guarantees turn-on with 3.3V outputs; 24 A pulsed rating handles inrush currents safely.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	Lower R_DS(ON) (25 mΩ @ 10V), larger SOT23-6 package, higher Q_g (6.5 nC)	Requires more board area and stronger gate drive; better for high-efficiency, lower-frequency designs	Select when lower conduction loss outweighs layout and drive complexity.
AO3400	Similar R_DS(ON) (42 mΩ @ 10V), same SOT23-3, but higher C_iss (420 pF) and Q_g (12 nC)	Slower switching and higher drive power demand; less suitable for >1 MHz operation	Choose only if cost is primary constraint and switching frequency ≤500 kHz.

Compared with DMN3061S-13, DMN3025LSD-13 delivers lower conduction loss but demands more PCB real estate and gate drive strength, while AO3400 trades higher switching losses and drive burden for lower unit cost-making DMN3061S-13 optimal for space- and efficiency-balanced 3.3V/5V logic-driven power switches.

Availability

DMN3061S-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB load switching, DC-DC synchronous rectification, and microcontroller GPIO interface drivers requiring stable component supply and consistent SOT23 sourcing.

Supply support for DMN3061S-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The DMN3061S belongs to Diodes' logic-level N-channel MOSFET product line, engineered for efficient, low-voltage switching in space-constrained consumer, industrial, and computing applications.

FAQ

What is the maximum continuous drain current for DMN3061S-13 at 70°C ambient?

The maximum continuous drain current is 1.8 A at T_A = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad size). This derating reflects thermal limits imposed by R_θJA = 161 °C/W and T_J(max) = 150°C. Operation above this current requires enhanced heatsinking or reduced ambient temperature.

Is DMN3061S-13 suitable for 3.3V microcontroller GPIO drive without a level shifter?

Yes. With V_GS(TH) ranging from 0.5 V to 1.8 V and R_DS(ON) = 98 mΩ at V_GS = 4.5 V, the device reliably turns on using 3.3V GPIO outputs. At 3.3V V_GS, R_DS(ON) rises to 196 mΩ (ID = 1.5 A), which remains usable for ≤500 mA loads where modest conduction loss is acceptable.

Does DMN3061S-13 have avalanche ruggedness rating?

No avalanche energy rating (E_AS) is specified in the datasheet. The device is rated for V_DSS = 30 V maximum, and operation beyond this voltage-even transiently-may cause irreversible breakdown. External clamping (e.g., TVS diode) is required in inductive-switching applications where V_DS spikes exceed 30 V.

What is the moisture sensitivity level (MSL) and reflow profile compliance for DMN3061S-13?

DMN3061S-13 has MSL Level 1 per J-STD-020, meaning it is not moisture-sensitive and may be stored indefinitely at ≤30°C/85% RH without dry-pack requirements. It is qualified for standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C), compatible with IPC/JEDEC J-STD-020D.2 specifications.

DMN3061S-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 3.3V, 10V

Rds On (Max) @ Id, Vgs:: 59mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 233 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 770mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3061S-13 FAQ

1.How can I place an order for DMN3061S-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3061S-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3061S-13 reliable?

The price and inventory of DMN3061S-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061S-13 is usually 5 days.

3.What payment methods are accepted for DMN3061S-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061S-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3061S-13?

DMN3061S-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3061S-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3061S-13?

For technical support, including DMN3061S-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061S-13 requirements.

6.How does Aetrix verify that DMN3061S-13 is sourced from the original manufacturer or authorized distributors?

All DMN3061S-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061S-13 meets industry standards.

7.What is the process for return or replacement of DMN3061S-13?

All DMN3061S-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061S-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3061S-13 part is unused and in its original packaging.

Return procedure for DMN3061S-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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