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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3061S-7

Name: DMN3061S-7
Brand: Diodes Incorporated
SKU: DMN3061S-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3061S-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3061S-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

Quantity:: RFQ Add To RFQ list

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Inventory:5,796

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Product details

Overview

DMN3061S-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT23 package, featuring 59 mΩ R_DS(ON) at V_GS = 10V and 98 mΩ at V_GS = 4.5V, rated for 2.3A continuous drain current at +25°C. It delivers low input capacitance (233 pF), fast switching (t_D(ON) = 0.9 ns), and operates across –55°C to +150°C junction temperature range - deployed in power management and general-purpose load switching circuits.

For engineers reviewing the DMN3061S-7 datasheet, DMN3061S-7 pinout, DMN3061S-7 application, or DMN3061S-7 equivalent, this page provides verified electrical parameters, thermal performance data, SOT23 terminal mapping, real-world use scenarios, and validated alternative parts with documented functional differences.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low R_DS(ON) while preserving gate charge (Q_g = 5.5 nC at V_GS = 10V) and dynamic capacitance (C_iss = 233 pF, C_oss = 45 pF). Its V_GS(TH) of 0.5–1.8 V enables reliable turn-on with 3.3V logic-level drive.

Thermal design is supported by R_θJA = 161°C/W on FR-4 (2 oz Cu, minimum pad) and 101°C/W with 1-inch² copper plate. The body diode exhibits V_SD = 0.7–1.0 V at I_S = 1 A, suitable for synchronous rectification and reverse polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 24V systems.
R_DS(ON)	59 mΩ @ V_GS = 10V - Enables ≤180 mW conduction loss at 2.3A; critical for thermally constrained PCB layouts.
I_D (max)	2.3 A @ T_A = +25°C - Continuous current rating under standard mounting; derates to 1.8 A at +70°C ambient.
C_iss	233 pF - Low input capacitance reduces gate drive power and speeds up switching transitions.
t_D(ON)	0.9 ns - Ultra-fast turn-on delay supports high-frequency PWM control in DC-DC converters.
Q_g	5.5 nC @ V_GS = 10V - Total gate charge determines driver strength requirement and switching energy loss.
T_J Range	–55°C to +150°C - Extended junction temperature capability supports automotive under-hood and industrial motor control environments.

Pinout & Package

Package: SOT23 - surface-mount plastic package with matte tin annealed terminals, UL 94V-0 rated, moisture sensitivity level 1 per J-STD-020, weight ≈ 0.008 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms cathode of intrinsic body diode.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <±100 nA leakage; driven by logic-level or dedicated gate driver.
3 (Drain)	High-side current output node	Carries switched load current; connects to positive rail or inductive load; withstands 30V breakdown.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V drive	98 mΩ - Enables direct interfacing with 3.3V/5V microcontrollers without level-shifting circuitry.
Fast switching speed	t_F = 2.4 ns - Minimizes transition losses in high-frequency (>1 MHz) buck regulators and LED drivers.
Low gate charge	Q_gd = 0.9 nC - Reduces Miller effect-induced shoot-through risk in half-bridge configurations.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb) - Meets EU environmental compliance mandates.
Robust thermal performance	R_θJA = 101°C/W with enhanced copper pad - Supports sustained 1.23 W power dissipation in compact space-constrained designs.

Applications

USB Power Switching

Load Switch in IoT Sensors

Use Scenario: Selective power gating of USB peripheral ports to reduce standby current and meet USB-IF power budget limits.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS delivery; activated/deactivated via MCU GPIO.

Use Value: 98 mΩ R_DS(ON) at 4.5V ensures <100 mV drop at 1A load, preserving USB 5V tolerance while enabling sub-µA off-state leakage.

Use Scenario: Power cycling of BLE/Wi-Fi modules during sleep/wake cycles in battery-powered edge nodes.

IC Role / Device Role / Timing Role: High-efficiency enable switch placed between battery and RF subsystem; controlled by system PMIC or host MCU.

Use Value: 2.3A rating and 150°C max T_J allow reliable operation under peak transmit bursts; low Q_g minimizes wake-up latency.

Reverse Polarity Protection

Motor Driver Half-Bridge Leg

Use Scenario: Preventing damage from incorrect battery insertion in portable medical devices and handheld tools.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used in active reverse-voltage clamp configuration with gate driven by Zener-biased resistor network.

Use Value: Body diode forward voltage (V_SD = 0.7 V) and low R_DS(ON) limit reverse-current power loss to <100 mW at 2A fault condition.

Use Scenario: Low-side switch in brushed DC motor H-bridge for robotics and actuator control.

IC Role / Device Role / Timing Role: Synchronized switching element in PWM-driven leg; paired with complementary high-side device.

Use Value: Fast t_D(OFF) = 10.0 ns and low C_oss = 45 pF reduce dead-time requirements and improve efficiency at 20–50 kHz switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(ON) = 25 mΩ @ V_GS = 10V (lower), but SOT26 package (6-pin); higher Q_g = 10.5 nC.	Requires larger board area and higher gate drive current; better suited for higher-current, lower-frequency applications.	Select when R_DS(ON) reduction outweighs size and drive complexity; not drop-in compatible due to pin count and layout.
AO3400	R_DS(ON) = 44 mΩ @ V_GS = 10V; same SOT23-3 package; Q_g = 17 nC (higher); TJ max = +150°C (same).	Higher switching losses due to elevated Q_g and C_iss = 490 pF; less efficient in >500 kHz applications.	Acceptable for cost-sensitive, lower-frequency (<200 kHz) load switches where thermal margin exists.

Compared with DMN3061S-7, DMN3025LSD-13 offers lower conduction loss but demands more board space and gate drive capability, while AO3400 trades higher switching losses for broader distributor availability - making DMN3061S-7 optimal for space-constrained, high-efficiency 3.3V/5V logic-driven power switches.

Availability

DMN3061S-7 is available at Aetrix Electronics and suitable for USB power switching, IoT sensor load control, reverse polarity protection, and motor driver half-bridge legs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMN3061S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3061S-7 belongs to Diodes' logic-level N-channel MOSFET product line, engineered for high-efficiency, low-voltage power switching in portable, battery-powered, and space-constrained applications.

FAQ

What is the maximum continuous drain current for DMN3061S-7 at +70°C ambient?

The DMN3061S-7 supports 1.8 A continuous drain current at T_A = +70°C with standard FR-4 mounting (2 oz Cu, minimum pad layout). This derating reflects its 161°C/W thermal resistance and 150°C maximum junction temperature, ensuring safe operation without forced cooling.

Can DMN3061S-7 be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(TH)) ranges from 0.5 V to 1.8 V, and it achieves 98 mΩ R_DS(ON) at V_GS = 4.5 V and 196 mΩ at V_GS = 3.3 V. At 3.3V drive, it delivers ~1.5 A continuous current with acceptable on-resistance for many low-power switching tasks.

Does DMN3061S-7 have AEC-Q101 qualification for automotive use?

No - the official datasheet does not list AEC-Q101 qualification. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing; users must contact Diodes directly for qualified alternatives such as the DMP3025L or DMN3040L.

What is the safe operating area (SOA) limitation for single-pulse operation at V_DS = 15V?

At V_DS = 15V and T_A = +25°C, the DMN3061S-7 supports up to 3.1 A for 100 µs pulses (duty cycle ≤1%), per Figure 12. This is governed by R_DS(ON)-limited conduction and transient thermal resistance, not avalanche rating - avoid repetitive operation beyond SOA boundaries.

DMN3061S-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 3.3V, 10V

Rds On (Max) @ Id, Vgs:: 59mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 233 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 770mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3061S-7 FAQ

1.How can I place an order for DMN3061S-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3061S-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3061S-7 reliable?

The price and inventory of DMN3061S-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061S-7 is usually 5 days.

3.What payment methods are accepted for DMN3061S-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061S-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3061S-7?

DMN3061S-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3061S-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3061S-7?

For technical support, including DMN3061S-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061S-7 requirements.

6.How does Aetrix verify that DMN3061S-7 is sourced from the original manufacturer or authorized distributors?

All DMN3061S-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061S-7 meets industry standards.

7.What is the process for return or replacement of DMN3061S-7?

All DMN3061S-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061S-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3061S-7 part is unused and in its original packaging.

Return procedure for DMN3061S-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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