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Diodes Incorporated DMN3061SVT-13
- Part No.:
- DMN3061SVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3061SVT-13.pdf
- Description:
- MOSFET 2N-CH 30V 3.4A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:8,797
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Product details
Overview
DMN3061SVT-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 60mΩ RDS(ON) @ VGS=10V, and 3.4A continuous drain current at TA=+25°C. It serves as a compact, high-efficiency synchronous rectifier or load switch in space-constrained DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN3061SVT-13 datasheet, DMN3061SVT-13 pinout, DMN3061SVT-13 application, or DMN3061SVT-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at low gate drive (4.5V), thermal resistance (142°C/W on FR-4), and TSOT26 footprint compatibility with high-density PCB layouts.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices sharing a common source configuration in a single TSOT26 package. Its design emphasizes low gate charge (Qg = 6.6nC @ 10V) and fast switching (tr = 97ns), enabling high-frequency operation in buck converters without excessive gate-drive power loss.
The device features tightly controlled VGS(TH) (0.5–1.8V), low input capacitance (Ciss = 278pF), and robust body diode performance (VSD = 0.7V @ 1A), supporting efficient synchronous rectification and bidirectional current handling in compact power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage before avalanche conduction begins; sets upper limit for input/output rail voltage in DC-DC topologies. |
| RDS(ON) @ VGS=10V | 60mΩ - On-resistance measured at full gate drive; determines I²R conduction loss at rated 3.4A current in steady-state operation. |
| RDS(ON) @ VGS=4.5V | 100mΩ - Critical for 3.3V/5V logic-level drive applications; defines power loss when driven directly by microcontroller GPIO or low-voltage PWM controllers. |
| Qg @ VGS=10V | 6.6nC - Total gate charge required to fully turn on both channels; directly impacts gate driver sizing and switching loss at high frequencies (e.g., >1MHz). |
| Ciss | 278pF - Input capacitance at VDS=15V; influences gate drive loop stability and Miller effect during hard-switching transitions. |
| TJ Range | −55°C to +150°C - Extended junction temperature capability supports operation in automotive cabin or industrial ambient environments without derating. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), optimized for high thermal efficiency on 2oz copper PCBs with minimal footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Primary high-side or low-side current path for first MOSFET; electrically isolated from D2 but thermally coupled within die. |
| 2 (S1) | Source of Channel 1 | Return node for Channel 1; internally tied to Pin 3 (G1) ground reference in common-source configuration. |
| 3 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires <1.8V threshold to initiate conduction; compatible with 3.3V logic. |
| 4 (D2) | Drain of Channel 2 | Independent drain node for second MOSFET; enables dual-switch topologies (e.g., half-bridge, dual-phase sync rectifier). |
| 5 (S2) | Source of Channel 2 | Return node for Channel 2; separate from S1, allowing independent source referencing or floating configurations. |
| 6 (G2) | Gate of Channel 2 | Independent control input for Channel 2; identical threshold and drive requirements as G1 for matched switching behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual N-channel topology | Two electrically isolated but thermally coupled MOSFETs enable precise timing alignment and current balancing in synchronous rectifiers and dual-phase regulators. |
| Low RDS(ON) at 4.5V | 100mΩ ensures ≤270mW conduction loss at 2.7A, critical for battery-powered systems where 5V gate drive is unavailable. |
| Ultra-low Ciss and Qg | 278pF Ciss and 3.5nC Qg @ 4.5V reduce gate drive power and enable clean 1MHz+ switching without shoot-through risk. |
| Green, halogen-free construction | UL 94V-0 molded compound with <900ppm Br/Cl and <1000ppm Sb meets IPC-1752A Class 2 material declarations for eco-compliant manufacturing. |
Applications
| LED Backlighting | DC-DC Buck Converter |
|---|---|
Use Scenario: Driving parallel white LED strings in LCD panel backlight units with PWM dimming. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling current through two independent LED banks. Use Value: Matched RDS(ON) ensures uniform brightness; low VSD minimizes forward voltage drop across internal body diode during PWM off-cycle. |
Use Scenario: Synchronous rectification stage in 12V-to-3.3V/5V point-of-load converter for FPGA or SoC power rails. IC Role / Device Role / Timing Role: Dual N-MOSFET replacing Schottky diodes in buck output stage to improve efficiency above 85% at 2A load. Use Value: 100mΩ RDS(ON) @ 4.5V allows direct drive from controller's gate driver, eliminating external level-shifting circuitry. |
| USB Power Delivery Switch | Load Switch for Industrial Sensors |
Use Scenario: Dual-path power routing in USB-C PD sink applications requiring independent VBUS and CC line protection. IC Role / Device Role / Timing Role: Independent channel control for hot-swap sequencing and overcurrent isolation between power and data paths. Use Value: Fast tf = 51ns and low Qgd = 1.3nC prevent voltage overshoot during dynamic load insertion, meeting USB PD 3.1 transient specs. |
Use Scenario: Controlled power enable for 4–20mA loop-powered sensors in factory automation PLC modules. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤1µA) high-side switch isolating sensor supply during standby or fault conditions. Use Value: 1.08W power rating with 116°C/W RθJA (with copper pad) sustains 2.7A continuous current without thermal shutdown in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3065LVT-7 | Higher RDS(ON) (75mΩ @ 10V), lower Qg (4.8nC), same TSOT26 package. | Better suited for lower-current (<2A), higher-frequency (>2MHz) applications where gate drive loss dominates conduction loss. | Select when prioritizing switching efficiency over conduction loss in ultralightweight portable designs. |
| AOB2032L | SO-8 package, 28mΩ @ 10V, 12A rating, higher thermal mass (RθJA = 50°C/W). | Requires larger PCB area but delivers 3× current capacity and superior thermal headroom for industrial motor drivers. | Choose for high-reliability 12V systems needing >5A peak current and extended lifetime under thermal cycling. |
Compared with DMN3061SVT-13, DMN3065LVT-7 trades conduction loss for reduced gate energy, while AOB2032L sacrifices miniaturization for higher current and thermal robustness-making DMN3061SVT-13 optimal for space-constrained, medium-current DC-DC and backlighting where footprint and 4.5V drive compatibility are decisive.
Availability
DMN3061SVT-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC buck converters, and USB power delivery switching requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for DMN3061SVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
The DMN3061SVT-13 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for compact, high-efficiency power conversion in consumer, computing, and industrial equipment where low RDS(ON) at logic-level gate drive is essential.
FAQ
What is the maximum continuous drain current for DMN3061SVT-13 at 70°C ambient?
The maximum continuous drain current is 2.7A at TA = +70°C with device mounted on an FR-4 board using minimum recommended pad layout per datasheet Note 5. This reflects thermal derating due to increased RθJA at elevated ambient temperatures, not a change in intrinsic device capability.
Can DMN3061SVT-13 be used in a half-bridge configuration?
Yes-its independent drain (D1/D2) and gate (G1/G2) terminals allow use in half-bridge topologies, provided external gate drivers provide proper dead-time control and voltage isolation between high-side and low-side drive signals to prevent shoot-through.
Is the TSOT26 package lead-free and RoHS compliant?
Yes-the DMN3061SVT-13 uses matte tin annealed over copper leadframe and fully complies with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU, with no purposely added lead, halogen, or antimony compounds per Diodes' green product definition.
What is the safe operating area (SOA) limitation at DC operation?
At DC operation and TC = 25°C, the SOA is limited by RDS(ON) conduction, allowing up to 3.4A at VDS ≤ 10V. Above 10V, thermal limits dominate, reducing maximum current to ~1.2A at 30V due to 0.88W power dissipation ceiling on standard FR-4 layout.
DMN3061SVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 278pF @ 15V
- Power - Max:
- 880mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3061SVT-13 FAQ
1.How can I place an order for DMN3061SVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3061SVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3061SVT-13 reliable?
The price and inventory of DMN3061SVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061SVT-13 is usually 5 days.
3.What payment methods are accepted for DMN3061SVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061SVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3061SVT-13?
DMN3061SVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3061SVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3061SVT-13?
For technical support, including DMN3061SVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061SVT-13 requirements.
6.How does Aetrix verify that DMN3061SVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN3061SVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061SVT-13 meets industry standards.
7.What is the process for return or replacement of DMN3061SVT-13?
All DMN3061SVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061SVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3061SVT-13 part is unused and in its original packaging.
Return procedure for DMN3061SVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3061SVT-13 Tags
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