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Diodes Incorporated DMN3061SVTQ-7
- Part No.:
- DMN3061SVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3061SVTQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 3.4A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:2,588
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Product details
Overview
DMN3061SVTQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 60 mΩ RDS(on) @ 10V VGS, and 3.4A ID at +25°C - designed for automotive-grade power management, backlighting, and DC-DC converter switching stages.
For engineers reviewing the DMN3061SVTQ-7 datasheet, DMN3061SVTQ-7 pinout, DMN3061SVTQ-7 application, or DMN3061SVTQ-7 equivalent, key selection criteria include AEC-Q101 qualification, low RDS(on) at 4.5V (100 mΩ), fast switching (tF = 51 ns), thermal resistance (RθJA = 142 °C/W), and dual-channel integration in a 6-pin surface-mount package.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single TSOT26 package, sharing no internal connection between channels - enabling independent gate control for synchronous buck topologies or dual-load switching. Each channel supports ±20V gate drive and operates across –55°C to +150°C junction temperature.
Its low input capacitance (Ciss = 278 pF) and moderate gate charge (Qg = 6.6 nC @ 10V) support efficient 1–2 MHz switching in space-constrained automotive power rails, while body diode forward voltage (VSD = 0.7 V @ 1A) enables reliable freewheeling in non-synchronous configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12V automotive system compatibility with margin. |
| RDS(on) @ VGS = 10V | 60 mΩ - Enables ≤0.65 W conduction loss at 3.4A continuous current in high-efficiency DC-DC stages. |
| RDS(on) @ VGS = 4.5V | 100 mΩ - Supports logic-level gate drive from 3.3V/5V microcontrollers without level-shifting. |
| ID (TA = +25°C) | 3.4 A - Continuous current rating under standard FR-4 PCB layout (2 oz Cu, minimum pad). |
| tF / tR | 51 ns / 97 ns - Fast turn-off/turn-on times reduce switching losses in PWM-controlled LED drivers. |
| RθJA | 142 °C/W - Thermal performance validated on standard FR-4 board; requires thermal relief for >1W dissipation. |
| Ciss | 278 pF - Low input capacitance minimizes gate drive power and improves EMI behavior at high frequency. |
Pinout & Package
Package: TSOT26 - 6-pin, ultra-thin, lead-free surface-mount package with matte tin annealed terminals; moisture sensitivity level 1 per J-STD-020; UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to load or supply rail. |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to ground or floating node depending on topology (e.g., high-side source). |
| G1 | Gate of Channel 1 | Control input for Channel 1; requires <1.8V threshold activation; driven by dedicated gate driver or MCU GPIO. |
| D2 | Drain of Channel 2 | Independent drain node; enables dual-switch operation (e.g., half-bridge legs or redundant loads). |
| S2 | Source of Channel 2 | Separate return path for Channel 2; not internally connected to S1 - allows floating or grounded configuration. |
| G2 | Gate of Channel 2 | Independent control terminal; identical electrical characteristics to G1; supports asynchronous or synchronized switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements; PPAP-capable with IATF 16949 manufacturing. |
| Low RDS(on) at 4.5V | 100 mΩ enables direct interface with 3.3V/5V logic without gate boosters in infotainment power rails. |
| Low Ciss & Qg | 278 pF Ciss and 3.5 nC Qg @ 4.5V reduce gate drive losses in 500 kHz–2 MHz LED backlight dimming. |
| Green, halogen-free | Meets RoHS 3 (2015/863/EU); <900 ppm Br/Cl, <1000 ppm Sb - compliant for EU and China automotive supply chains. |
| Thermally robust | RθJA = 116 °C/W with 1-inch2 copper plate enables 1.08 W continuous dissipation in compact modules. |
Applications
| Automotive LED Backlighting | USB-C Power Delivery Switching |
|---|---|
|
Use Scenario: Driving segmented LCD backlight arrays in instrument clusters and center displays with PWM dimming up to 20 kHz. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED strings; each channel independently modulated for local dimming zones. Use Value: 100 mΩ RDS(on) at 4.5V ensures <150 mW conduction loss per string at 1.2A, minimizing thermal derating in sealed enclosures. |
Use Scenario: Implementing dual-path load switching in USB-C PD sink applications requiring independent VBUS and VCONN control. IC Role / Device Role / Timing Role: Two independent N-channel switches managing power routing between CC logic, VBUS discharge, and auxiliary power paths. Use Value: Matched channel parameters enable consistent timing and voltage drop across both paths, supporting USB-IF compliance testing. |
| Automotive DC-DC Converter High-Side Switch | Redundant Power Management in ADAS ECUs |
|
Use Scenario: High-side switching in 5V/3.3V buck converters powering camera modules and radar SoCs in ADAS subsystems. IC Role / Device Role / Timing Role: Single-channel used as high-side switch with bootstrap gate drive; second channel reserved for fault isolation or auxiliary rail. Use Value: 30V VDSS and 150°C TJMAX ensure reliability during cold-crank (6.5V) and load-dump (40V) transients per ISO 7637-2. |
Use Scenario: Providing fail-operational redundancy in safety-critical power domains of lane-keeping or automatic emergency braking ECUs. IC Role / Device Role / Timing Role: Dual independent switches delivering power to primary and backup microcontroller domains with independent enable control. Use Value: AEC-Q101 qualification and separate thermal/electrical isolation between channels prevent single-point failure propagation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(on) (25 mΩ @ 10V), but larger SO-8 package; higher Ciss (620 pF); same AEC-Q101 grade. | Requires more PCB area; better suited for lower-frequency, higher-current (>5A) DC-DC outputs. | Select when thermal budget allows SO-8 and lower conduction loss outweighs size constraints. |
| NTMFS4C02NT1G | Single-channel 30V MOSFET (1.9mΩ @ 10V), PowerPAK SO-8; no dual functionality; higher current rating (100A pulsed). | Cannot replace dual-channel topology without redesign; used where space permits discrete channel separation. | Choose only if application requires >5A per channel and dual integration is unnecessary. |
Compared with DMN3061SVTQ-7, DMN3025LSD-13 offers superior conduction efficiency but sacrifices miniaturization, while NTMFS4C02NT1G provides extreme current capability at the cost of channel independence and board footprint - making DMN3061SVTQ-7 optimal for space-limited dual-rail automotive power switching.
Availability
DMN3061SVTQ-7 is available at Aetrix Electronics and suitable for automotive LED backlighting, USB-C PD power routing, and ADAS DC-DC converter designs requiring stable component supply, AEC-Q101 traceability, and TSOT26 footprint compatibility.
Supply support for DMN3061SVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets with IATF 16949-certified facilities.
The DMN3061SVTQ belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for compact, thermally efficient switching in 12V automotive subsystems including infotainment, lighting, and ADAS power management.
FAQ
Is DMN3061SVTQ-7 suitable for high-side switching configurations?
Yes - each channel supports high-side operation when paired with a bootstrap or charge-pump gate driver. The 30V VDSS and 150°C maximum junction temperature meet ISO 7637-2 load-dump immunity requirements. Gate threshold voltage (0.5–1.8V) ensures reliable turn-on with 5V or 3.3V logic-level drive when using appropriate level-shifting or driver ICs.
What is the maximum safe operating frequency for DMN3061SVTQ-7 in PWM applications?
Based on measured switching times (tF = 51 ns, tR = 97 ns) and gate charge (Qg = 6.6 nC @ 10V), the device supports stable operation up to 2 MHz in well-designed layouts with low-inductance gate loops. Efficiency remains above 92% in 12V-to-5V buck converters at 1 MHz when RDS(on) and Coss losses are balanced.
Does DMN3061SVTQ-7 require external gate resistors for stability?
Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 29 pF) and PCB trace inductance. Without it, overshoot exceeding ±20V VGS rating may occur during fast edge transitions, risking long-term gate oxide degradation in automotive life-cycle testing.
How does the TSOT26 package affect thermal performance compared to SO-8 alternatives?
The TSOT26 package delivers 30% smaller footprint than SO-8 but exhibits higher thermal resistance: RθJA = 142 °C/W (FR-4, 2 oz Cu) vs. ~62 °C/W for SO-8. To achieve comparable power handling, designers must use thermal vias under the exposed drain pads and minimize trace length to heatsinking planes - especially critical in ambient temperatures above 85°C.
DMN3061SVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 278pF @ 15V
- Power - Max:
- 880mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3061SVTQ-7 FAQ
1.How can I place an order for DMN3061SVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3061SVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3061SVTQ-7 reliable?
The price and inventory of DMN3061SVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061SVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3061SVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061SVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3061SVTQ-7?
DMN3061SVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3061SVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3061SVTQ-7?
For technical support, including DMN3061SVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061SVTQ-7 requirements.
6.How does Aetrix verify that DMN3061SVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3061SVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061SVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3061SVTQ-7?
All DMN3061SVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061SVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3061SVTQ-7 part is unused and in its original packaging.
Return procedure for DMN3061SVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3061SVTQ-7 Tags
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