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Diodes Incorporated DMN3061SW-13
- Part No.:
- DMN3061SW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN3061SW-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:7,983
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Product details
Overview
DMN3061SW-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT323 package, featuring 60mΩ RDS(ON) at VGS = 10V and 100mΩ at VGS = 4.5V, rated for 2.7A continuous drain current at TA = +25°C. It delivers low gate charge (3.5nC), fast switching (tR = 97ns), and optimized capacitance (Ciss = 278pF), enabling high-efficiency operation in compact DC-DC converters and power switches.
For engineers reviewing the DMN3061SW-13 datasheet, DMN3061SW-13 pinout, DMN3061SW-13 application, or DMN3061SW-13 equivalent, key selection criteria include its 30V VDSS, 4.5V logic-level gate drive compatibility, thermal resistance of 254°C/W on FR-4, 0.49W power dissipation limit, and SOT323 footprint suitability for space-constrained PCB layouts.
Technical Context
This MOSFET employs planar silicon technology with optimized channel geometry to achieve low RDS(ON) while maintaining robust safe operating area (SOA) under pulsed conditions up to 22A. Its gate threshold voltage (0.5–1.8V) ensures reliable turn-on with 3.3V and 4.5V microcontroller outputs.
The device integrates a body diode with 0.7V forward voltage at 1A and exhibits low reverse transfer capacitance (Crss = 29pF), supporting stable high-frequency switching in buck regulators and load-switching circuits without significant Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V/24V rail protection and DC-DC primary-side switching |
| RDS(ON) | 60mΩ @ VGS = 10V - Enables ≤160mW conduction loss at 2.1A in 5V logic-driven applications |
| ID (continuous) | 2.7A @ TA = +25°C - Supports sustained loads in portable power management with derating above 70°C |
| Qg | 3.5nC - Reduces gate drive power and enables efficient 1–2MHz switching in synchronous buck topologies |
| Ciss | 278pF @ VDS = 15V - Limits high-frequency input impedance impact and eases gate driver sizing |
| TJ range | −55°C to +150°C - Qualified for industrial and extended-temperature embedded systems with no derating below −40°C |
Pinout & Package
SOT323 surface-mount package: 1.9mm × 2.1mm footprint, 0.95mm height, matte tin-plated copper leadframe, JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0–20V gate-source bias; requires <3.5nC charge for full enhancement |
| S | Source | Reference node for gate drive and current return path; internally connected to substrate and exposed pad (if any) |
| D | Drain | High-side or low-side power path terminal; handles up to 22A pulsed current within SOA limits |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 100mΩ - Enables direct interface with 3.3V/4.5V GPIOs without level-shifting in battery-powered load switches |
| Fast switching speed | tR = 97ns, tF = 51ns - Minimizes transition losses in PWM-controlled power stages operating above 500kHz |
| Low input capacitance | Ciss = 278pF - Reduces gate drive current demand and improves EMI profile in high-density power modules |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements for automotive and medical OEMs |
| Thermal performance | RθJA = 254°C/W (FR-4, min pad) - Allows thermal design margin estimation using standard PCB layout rules without heatsinking |
Applications
| USB Power Delivery Switch | Portable DC-DC Converter |
|---|---|
Use Scenario: Selective 5V/9V/15V rail enablement in USB-C PD sink devices with overcurrent protection. IC Role / Device Role: Low-side load switch controlling VBUS path with fast fault response. Use Value: 100mΩ RDS(ON) at 4.5V gate drive minimizes voltage drop across 2A charging paths, preserving regulation accuracy. |
Use Scenario: High-frequency synchronous rectifier in 1.2V/3A buck converter for FPGA core supply. IC Role / Device Role: Secondary-side power FET in non-isolated step-down regulator. Use Value: 3.5nC Qg and 278pF Ciss reduce gate drive losses and improve efficiency at 1.5MHz switching frequency. |
| IoT Sensor Node Power Gate | Automotive Body Control Module |
Use Scenario: Controlled power sequencing for BLE/Wi-Fi SoCs and analog front-ends in battery-operated edge sensors. IC Role / Device Role: Always-on, low-quiescent-current power switch enabling deep-sleep mode isolation. Use Value: 1µA IDSS leakage at 24V ensures <1µW standby loss, extending coin-cell life beyond 5 years. |
Use Scenario: LED lighting control and small solenoid actuation in 12V vehicle subsystems. IC Role / Device Role: General-purpose N-channel driver for resistive and inductive loads. Use Value: 30V VDSS and 150°C TJ rating support operation in under-hood environments with transient spikes up to ±25V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(ON) (25mΩ @ 4.5V), larger SOT23-6 package, higher Qg (6.8nC) | Requires more PCB area but supports higher current (4.5A) and lower conduction loss in thermally constrained designs | Select when >3A continuous current or <30mΩ RDS(ON) is required; avoid if board space or gate drive strength is limited |
| AO3400 | Same SOT23 package, slightly higher RDS(ON) (43mΩ @ 10V), higher Ciss (420pF), non-AEC-qualified | Cost-optimized alternative for consumer-grade applications where AEC-Q200 compliance is not mandated | Prefer for cost-sensitive, non-automotive designs where 278pF Ciss and 3.5nC Qg provide measurable EMI or efficiency advantage |
Compared with DMN3061SW-13, DMN3025LSD-13 trades package size and gate drive burden for lower conduction loss, while AO3400 offers lower unit cost at the expense of higher switching losses and reduced thermal margin-making DMN3061SW-13 optimal for space-constrained, medium-current, high-efficiency 3.3V/4.5V-driven power switches.
Availability
DMN3061SW-13 is available at Aetrix Electronics and suitable for USB power delivery switches, portable DC-DC converters, and IoT sensor node power gates requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.
Supply support for DMN3061SW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and product qualification per AEC-Q101 for automotive MOSFETs.
The DMN3061SW belongs to Diodes' logic-level N-channel power MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained portable and industrial power systems.
FAQ
Is DMN3061SW-13 suitable for 3.3V microcontroller gate drive?
Yes. With a gate threshold voltage range of 0.5–1.8V and guaranteed RDS(ON) of 100mΩ at VGS = 4.5V, the DMN3061SW-13 fully enhances using standard 3.3V GPIO outputs. Its low 3.5nC total gate charge ensures minimal drive current demand, even at high switching frequencies.
What is the maximum continuous drain current at 85°C ambient?
At TA = +85°C, the DMN3061SW-13 supports 1.7A continuous drain current when mounted on a standard FR-4 PCB with minimum recommended pad layout. This derating follows the 254°C/W junction-to-ambient thermal resistance and 150°C maximum junction temperature limit.
Does DMN3061SW-13 have avalanche rating?
No. The DMN3061SW-13 datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy ratings. It is intended for clamped inductive loads or resistive switching only; external protection (e.g., TVS, snubber) is required for inductive turn-off transients exceeding 30V.
Can DMN3061SW-13 replace Si2302DS in existing designs?
Yes, with verification. Both are SOT323 N-channel MOSFETs rated for 30V and logic-level drive, but DMN3061SW-13 offers lower RDS(ON) (60mΩ vs. 75mΩ @ 10V) and significantly lower Qg (3.5nC vs. 5.5nC). Layout and thermal validation are recommended due to differences in SOA and body diode characteristics.
DMN3061SW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3.3V, 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.5 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 278 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 490mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN3061SW-13 FAQ
1.How can I place an order for DMN3061SW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3061SW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3061SW-13 reliable?
The price and inventory of DMN3061SW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061SW-13 is usually 5 days.
3.What payment methods are accepted for DMN3061SW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061SW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3061SW-13?
DMN3061SW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3061SW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3061SW-13?
For technical support, including DMN3061SW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061SW-13 requirements.
6.How does Aetrix verify that DMN3061SW-13 is sourced from the original manufacturer or authorized distributors?
All DMN3061SW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061SW-13 meets industry standards.
7.What is the process for return or replacement of DMN3061SW-13?
All DMN3061SW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061SW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3061SW-13 part is unused and in its original packaging.
Return procedure for DMN3061SW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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