Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN3061SW-7

Part No.:
DMN3061SW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixDMN3061SW-7.pdf
Description:
MOSFET BVDSS: 25V~30V SOT323 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,905

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN3061SW-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 30V VDSS, 60 mΩ RDS(ON) @ 10V VGS, and 2.7A continuous drain current at +25°C. It delivers low on-resistance with fast switching (tR = 97 ns, Qg = 3.5 nC), optimized for compact DC-DC converters and power management switches in space-constrained portable electronics.

For engineers reviewing the DMN3061SW-7 datasheet, DMN3061SW-7 pinout, DMN3061SW-7 application, or DMN3061SW-7 equivalent, key selection criteria include its 4.5V gate drive compatibility (RDS(ON) = 100 mΩ), thermal resistance of 254°C/W on FR-4, and AEC-Q101 readiness for automotive-grade power switching where footprint and efficiency are critical.

Technical Context

This MOSFET employs planar silicon technology to balance conduction loss and switching speed, supporting PWM-based regulation in synchronous buck stages and load-switching circuits. Its gate threshold voltage range (0.5–1.8 V) enables reliable turn-on with 3.3V logic-level drivers, while low Ciss (278 pF) and Crss (29 pF) minimize Miller effect and improve gate drive efficiency.

The device operates across –55°C to +150°C junction temperature, with RDS(ON) increasing only 1.8× from 25°C to 125°C at VGS = 10V, ensuring stable performance in thermally demanding environments such as automotive body control modules and industrial sensor interfaces.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage before avalanche; supports 24V rail systems with margin.
RDS(ON) @ 10V 60 mΩ - Conduction loss of 432 mW at 2.7A; enables >92% efficiency in 1A–2A DC-DC stages.
RDS(ON) @ 4.5V 100 mΩ - Fully compatible with 3.3V/5V microcontroller GPIOs without level-shifting.
Qg 3.5 nC - Low gate charge reduces driver power and enables <100 ns switching transitions.
Ciss 278 pF - Limits high-frequency oscillation risk and eases EMI filtering design.
PD (FR-4) 0.49 W - Thermal limit on standard PCB; requires minimal copper area for 1.5A continuous operation.
TJ Range –55°C to +150°C - Qualified for under-hood automotive and industrial ambient conditions.

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
G Gate Control terminal; accepts 0–20V VGS; 4.2 Ω gate resistance limits ringing during fast edge transitions.
S Source Reference node for gate drive and current return path; tied to ground or low-side switch common.
D Drain High-side output node; handles up to 22A pulsed current; connects to input rail or inductor node in buck topology.

Key Features

Feature Design Value
Low RDS(ON) @ 4.5V 100 mΩ enables direct interface with 3.3V logic without external level shifters or gate drivers.
Fast switching speed tR = 97 ns / tF = 51 ns supports >1 MHz DC-DC operation with minimal dead-time loss.
Low input capacitance Ciss = 278 pF reduces gate drive current demand and improves noise immunity in noisy environments.
Thermal robustness RθJA = 254°C/W on FR-4 allows 1.5A continuous current with no heatsink in 25°C ambient.
AEC-Q101 readiness Manufactured in IATF 16949-certified facilities; suitable for automotive body electronics and infotainment power rails.

Applications

USB Power Delivery Switch Automotive LED Driver

Use Scenario: Selective 5V/9V/15V rail enablement in USB-C PD sink applications with strict size constraints.

IC Role / Device Role: Low-side load switch controlling power delivery to downstream port controllers and voltage translators.

Use Value: 100 mΩ RDS(ON) at 4.5V ensures <50 mV drop at 500 mA, preserving PD negotiation voltage margins.

Use Scenario: Dimmable tail-light or interior LED string control in 12V automotive systems.

IC Role / Device Role: High-efficiency PWM-controlled current sink for constant-current LED strings.

Use Value: Fast 97 ns rise time enables precise 1–10 kHz dimming without visible flicker or audible noise.

Portable Device Load Switch Industrial Sensor Interface

Use Scenario: Controlled power-up sequencing of RF transceivers and PMIC subsystems in wearables and IoT nodes.

IC Role / Device Role: Standby-mode isolation switch decoupling battery from non-critical peripherals.

Use Value: 1 µA max IDSS prevents battery drain over months of storage; SOT323 footprint saves board area.

Use Scenario: Isolation and protection of analog front-end inputs in programmable logic controllers (PLCs).

IC Role / Device Role: Overvoltage-protected signal path switch enabling safe hot-swap of sensor modules.

Use Value: 30V VDSS withstands transient surges up to ±24V; body diode supports reverse-polarity protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK-7 RDS(ON) = 45 mΩ @ 4.5V, but larger SOT23-3 package (3.0 × 1.4 mm); higher Ciss (420 pF). Better conduction loss, but less suitable for ultra-dense layouts requiring SOT323 footprint. Select when lower RDS(ON) outweighs board area constraints and thermal budget permits higher Ciss.
AO3400A RDS(ON) = 40 mΩ @ 10V but 120 mΩ @ 4.5V; SOT23-3 package; not AEC-Q101 qualified. Higher gate threshold variation (1.0–2.5 V) risks incomplete turn-on with marginal 3.3V drivers. Acceptable for cost-sensitive consumer designs where automotive qualification and tight VGS(TH) tolerance are not required.

Compared with DMN2004LK-7 and AO3400A, the DMN3061SW-7 uniquely combines SOT323 miniaturization, 100 mΩ RDS(ON) at 4.5V, and AEC-Q101 readiness-making it optimal for automotive and portable systems where footprint, logic-level drive, and reliability must coexist.

Availability

DMN3061SW-7 is available at Aetrix Electronics and suitable for USB-C power delivery switches, automotive LED drivers, and portable device load management requiring stable component supply and long-term lifecycle support.

Supply support for DMN3061SW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

The DMN3061SW-7 belongs to Diodes' logic-level power MOSFET product line, engineered specifically for high-density, low-voltage power switching in automotive, computing, and portable electronics where thermal efficiency and small footprint are essential.

FAQ

What is the maximum continuous drain current at +70°C ambient?

The DMN3061SW-7 supports 2.2 A continuous drain current at TA = +70°C with derating from the +25°C rating of 2.7 A. This is specified in the Absolute Maximum Ratings table and assumes operation on a standard FR-4 PCB with minimum recommended pad layout per datasheet Figure 13 thermal model.

Does this MOSFET include an integrated body diode, and what is its forward voltage?

Yes, the DMN3061SW-7 has an inherent parasitic body diode between source and drain. Its typical forward voltage is 0.7 V at IS = 1 A and VGS = 0 V, as measured in the Electrical Characteristics table under "Diode Forward Voltage (VSD)." This diode supports freewheeling in inductive loads and reverse-polarity protection.

Is the DMN3061SW-7 qualified for automotive applications?

The DMN3061SW-7 is manufactured in IATF 16949-certified facilities and meets AEC-Q101 stress test requirements for discrete semiconductors. While not pre-qualified as a full automotive part, Diodes Incorporated confirms it is suitable for automotive body electronics and infotainment power rails when used within its specified operating conditions.

Can this MOSFET be driven directly by a 3.3V microcontroller GPIO?

Yes-the DMN3061SW-7 has a guaranteed gate threshold voltage (VGS(TH)) of ≤1.8 V and delivers 100 mΩ RDS(ON) at VGS = 4.5 V, ensuring full enhancement with 3.3V logic. Its low Qg (3.5 nC) further minimizes required drive strength, making direct GPIO control feasible without external buffers in low-current switching applications.

DMN3061SW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.5 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
278 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
490mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

DMN3061SW-7 FAQ

1.How can I place an order for DMN3061SW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3061SW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3061SW-7 reliable?

The price and inventory of DMN3061SW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3061SW-7 is usually 5 days.

3.What payment methods are accepted for DMN3061SW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3061SW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3061SW-7?

DMN3061SW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3061SW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3061SW-7?

For technical support, including DMN3061SW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3061SW-7 requirements.

6.How does Aetrix verify that DMN3061SW-7 is sourced from the original manufacturer or authorized distributors?

All DMN3061SW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3061SW-7 meets industry standards.

7.What is the process for return or replacement of DMN3061SW-7?

All DMN3061SW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3061SW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3061SW-7 part is unused and in its original packaging.

Return procedure for DMN3061SW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3061SW-7 Tags

  • DMN3061SW-7
  • DMN3061SW-7 PDF
  • DMN3061SW-7 Datasheet
  • DMN3061SW-7 Specifications
  • DMN3061SW-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN3061SW-7
  • Buy DMN3061SW-7
  • DMN3061SW-7 Price
  • DMN3061SW-7 Distributor
  • DMN3061SW-7 Supplier
  • DMN3061SW-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER