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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3066L-7

Name: DMN3066L-7
Brand: Diodes Incorporated
SKU: DMN3066L-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3066L-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3066L-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN3066L-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT23 package, optimized for load switching with R_DS(ON) = 67 mΩ @ V_GS = 4.5V, I_D = 3.6 A (T_A = +25°C), and fast switching (t_r = 19 ns, t_f = 11 ns). It features ESD-protected gate, low V_GS(TH) (0.5–1.5 V), and operates from –55°C to +150°C.

For engineers reviewing the DMN3066L-7 datasheet, DMN3066L-7 pinout, DMN3066L-7 application, or DMN3066L-7 equivalent, key selection criteria include its low-threshold gate drive compatibility with 3.3V logic, thermal resistance (R_θJA = 154 °C/W on FR-4), and suitability for space-constrained DC-DC load switches and battery protection circuits.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining controlled gate charge (Q_g = 4.1 nC) and minimized Crss (42 pF), enabling efficient 1.25A–2.5A switching at 1–10 MHz frequencies. Its V_GS(TH) range (0.5–1.5 V) ensures reliable turn-on with standard GPIOs and supports direct interface with microcontrollers.

The device integrates an intrinsic body diode (V_SD = 0.7–1.2 V @ I_S = 0.6 A) and exhibits normalized R_DS(ON) variation <1.2× across –55°C to +150°C, supporting stable performance in thermally demanding environments without active gate bias compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; suitable for 24V rail and automotive 12V systems with margin.
R_DS(ON)	67 mΩ @ V_GS = 4.5V, I_D = 2.5A - Enables ≤170 mW conduction loss at 3.6A, critical for thermal budget in SOT23.
I_D (max)	3.6 A @ T_A = +25°C - Continuous current rating defined with minimum pad layout; derates to 2.9A at +85°C.
Q_g	4.1 nC - Low total gate charge reduces driver power and enables fast switching with 10Ω source impedance.
t_r/t_f	19 ns / 11 ns - Fast edge rates support high-frequency PWM control in compact DC-DC point-of-load regulators.
V_GS(TH)	0.5–1.5 V - Ensures full enhancement with 1.8V/3.3V logic outputs; eliminates need for level-shifting circuitry.
P_D	0.81 W (FR-4, 2 oz Cu) - Power dissipation limit under standard PCB layout; defines maximum steady-state I²R heating.

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4 mm × 1.3 mm × 1.0 mm), UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms common node with body diode cathode.
2 (Gate)	Control electrode for channel formation	ESD-protected input requiring ≤±12 V drive; low C_iss (353 pF) minimizes driver loading.
3 (Drain)	High-side current output terminal	Carries switched load current; electrically isolated from package tab (no thermal pad).

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(TH) as low as 0.5 V enables robust turn-on with 1.8V microcontroller I/O without external biasing.
Fast switching speed	19 ns rise / 11 ns fall time allows >5 MHz PWM operation while limiting switching losses in portable power rails.
ESD-protected gate	HBM rating ≥2 kV (per JEDEC JESD22-A114) eliminates need for external gate protection in board-level ESD zones.
Green, RoHS-compliant construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 2015/863/EU and IATF 16949 manufacturing.

Applications

USB Power Delivery Switch

Smartphone Battery Protection

Use Scenario: Selective enable/disable of 5V USB VBUS to peripheral ports during hot-plug detection or fault isolation.

IC Role / Device Role: Low-side load switch controlling VBUS path with minimal voltage drop and fast response to fault signals.

Use Value: 67 mΩ R_DS(ON) limits voltage drop to <240 mV at 3.6A, preserving USB 2.0/3.0 compliance margins.

Use Scenario: Isolation of Li-ion cell from system load during overcurrent, short-circuit, or thermal shutdown events.

IC Role / Device Role: Primary discharge FET in battery management IC (BMS) secondary protection circuit.

Use Value: Low V_GS(TH) ensures activation by BMS comparator outputs (typically 1.2–2.5V), eliminating external pull-up resistors.

IoT Sensor Node Power Gating

Industrial PLC Digital Output

Use Scenario: Periodic wake-up and power cycling of BLE/Wi-Fi modules and analog sensors to extend battery life.

IC Role / Device Role: High-efficiency main power switch enabling sub-μA quiescent current in sleep mode.

Use Value: Gate leakage <±10 μA at ±12 V ensures negligible standby current, supporting >5-year coin-cell operation.

Use Scenario: Driving 24V solenoid valves or indicator LEDs in programmable logic controller (PLC) output modules.

IC Role / Device Role: Low-voltage logic-controlled switch interfacing microcontroller GPIO to industrial 24V loads.

Use Value: 30V V_DSS provides 20% margin above 24V nominal supply, accommodating transient spikes per IEC 61000-4-4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 45 mΩ @ V_GS = 4.5V but rated only for 20V V_DSS; higher Q_g (5.2 nC).	Not suitable for 24V systems; limited to 5–12V rails where lower R_DS(ON) justifies reduced voltage rating.	Select when 20V max operating voltage is sufficient and lowest possible conduction loss is prioritized.
AO3400A	R_DS(ON) = 40 mΩ @ V_GS = 10V but 28 mΩ @ V_GS = 4.5V; no specified ESD rating; R_θJA = 120 °C/W (better thermal performance).	Lacks gate ESD protection; requires external TVS or series resistor in high-ESD environments (e.g., handheld devices).	Choose for cost-sensitive industrial applications where gate protection is implemented externally and thermal margin is critical.

Compared with DMN3066L-7, DMN2004LK-7 trades voltage headroom for lower R_DS(ON), while AO3400A offers better thermal resistance and slightly lower on-resistance but lacks integrated ESD protection-requiring additional board-level safeguards.

Availability

DMN3066L-7 is available at Aetrix Electronics and suitable for USB power delivery switches, smartphone battery protection circuits, and IoT sensor node power gating requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.

Supply support for DMN3066L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN3066L-7 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage load switching in space-constrained consumer, computing, and industrial applications.

FAQ

What is the maximum continuous drain current for DMN3066L-7 at 85°C ambient?

The DMN3066L-7 supports 2.9 A continuous drain current at T_A = +85°C with standard FR-4 PCB layout (2 oz copper, minimum pad size). This derating reflects thermal limitations imposed by R_θJA = 154 °C/W and P_D = 0.81 W. Operation above this current requires enhanced thermal management or forced airflow.

Does DMN3066L-7 require external gate protection against ESD?

No. The DMN3066L-7 integrates ESD protection on the gate terminal, rated to ≥2 kV HBM per JEDEC JESD22-A114. This eliminates the need for external TVS diodes or series resistors in typical board-level ESD environments (IEC 61000-4-2 Level 2), provided layout follows recommended trace length and grounding practices.

Can DMN3066L-7 be driven directly by a 1.8V GPIO?

Yes. With a guaranteed V_GS(TH) as low as 0.5 V and typical R_DS(ON) = 31 mΩ @ V_GS = 2.5V, the DMN3066L-7 achieves full enhancement at 1.8V drive. Measured transfer characteristics confirm I_D > 2 A at V_GS = 1.8V and V_DS = 5 V, making it compatible with modern ultra-low-voltage MCUs.

What is the safe operating area (SOA) limitation at DC conditions?

At DC operation, the DMN3066L-7 is limited by R_DS(ON) conduction and thermal dissipation. For T_J ≤ 150°C and T_A = 25°C, the SOA curve (Figure 12) shows maximum DC current is ~2.2 A at V_DS = 10 V, constrained by P_D = 0.81 W. Higher currents require pulsed operation or improved heatsinking.

DMN3066L-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 67mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.1 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 353 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 810mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3066L-7 FAQ

1.How can I place an order for DMN3066L-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3066L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3066L-7 reliable?

The price and inventory of DMN3066L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3066L-7 is usually 5 days.

3.What payment methods are accepted for DMN3066L-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3066L-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3066L-7?

DMN3066L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3066L-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3066L-7?

For technical support, including DMN3066L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3066L-7 requirements.

6.How does Aetrix verify that DMN3066L-7 is sourced from the original manufacturer or authorized distributors?

All DMN3066L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3066L-7 meets industry standards.

7.What is the process for return or replacement of DMN3066L-7?

All DMN3066L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3066L-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3066L-7 part is unused and in its original packaging.

Return procedure for DMN3066L-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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