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Diodes Incorporated DMN3066LVT-13
- Part No.:
- DMN3066LVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3066LVT-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:6,385
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Product details
Overview
DMN3066LVT-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TSOT26 package, delivering 67mΩ RDS(ON) at VGS = 4.5V and 3.6A continuous drain current at 25°C. It features ESD-protected gate, low input capacitance (328pF), fast switching (tD(ON) = 4.7ns), and is optimized for DC-DC converter power switches.
For engineers reviewing the DMN3066LVT-13 datasheet, DMN3066LVT-13 pinout, DMN3066LVT-13 application, or DMN3066LVT-13 equivalent, key selection criteria include RDS(ON) vs. VGS threshold (0.5–1.5V), thermal resistance (129°C/W on FR-4), safe operating area under pulsed load, and TSOT26 footprint compatibility with space-constrained power stages.
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching. Its 0.6–1.2V diode forward voltage (VSD) supports synchronous rectification, while Crss of 42pF enables stable gate drive under high dV/dt conditions.
The device operates across –55°C to +150°C junction temperature range and maintains RDS(ON) stability up to 150°C (normalized variation <1.8× at VGS = 4.5V). Gate charge profile (Qg = 4.0nC, Qgd = 1.3nC) is optimized for 1–5MHz DC-DC controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche; sets upper limit for buck converter input or load-switch rail voltage. |
| RDS(ON) | 67mΩ @ VGS = 4.5V - Conduction loss of 243mW at 3.6A; determines I²R heating in continuous conduction mode. |
| ID (25°C) | 3.6A - Continuous DC current rating on standard FR-4 PCB; derates to 2.9A at 70°C ambient. |
| Ciss | 328pF - Input capacitance defining gate drive energy requirement; impacts switching loss at 1–3MHz frequencies. |
| tD(ON) | 4.7ns - Turn-on delay time with 10Ω source impedance; critical for minimizing dead-time losses in half-bridge topologies. |
| VGS(TH) | 0.5–1.5V - Gate threshold range enabling logic-level drive from 1.8V/3.3V microcontrollers without level-shifting. |
| Qg | 4.0nC - Total gate charge required for full enhancement; defines minimum driver peak current (e.g., 400mA for 10ns rise). |
Pinout & Package
TSOT26 package: 6-pin ultra-thin surface-mount outline (2.9 × 1.6 × 0.6mm), matte tin-plated copper leadframe, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal management. |
| 2 (Gate) | Control terminal for channel modulation | ESD-protected input requiring <10Ω series resistor to prevent ringing; sensitive to >±12V transients. |
| 3 (Drain) | Main power output node | High-side switch node in buck converters; connects to inductor or load; carries full switched current. |
| 4 (Source) | Redundant source connection | Parallel path to Pin 1; improves current sharing and reduces package inductance in high-frequency operation. |
| 5 (Drain) | Redundant drain connection | Parallel path to Pin 3; lowers RDS(ON) contribution from bond wire resistance and enhances pulse current handling. |
| 6 (Source) | Third source terminal | Provides additional thermal and electrical path to PCB; critical for maintaining RDS(ON) stability above 100°C junction. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 98mΩ enables use with 2.5V GPIOs or low-voltage PMICs without gate boosting. |
| ESD-protected gate | HBM rating >2kV eliminates need for external gate protection diodes in board-level ESD environments. |
| Low Crss / Ciss ratio | Crss/Ciss = 12.8% minimizes Miller effect, enabling robust operation with 10Ω gate resistors at 2MHz. |
| Thermal resistance (RθJA) | 93°C/W with 1-inch² copper pour allows 1.3W dissipation at ≤70°C ambient-sufficient for 3A/5V loads. |
| Halogen- and antimony-free | <900ppm Br+Cl, <1000ppm Sb meets automotive green material compliance without sacrificing reliability. |
Applications
| DC-DC Buck Converter | USB-C Load Switch |
|---|---|
|
Use Scenario: Step-down regulation from 12V to 5V/3.3V in portable power banks and IoT edge nodes. IC Role / Device Role: High-side synchronous rectifier switch controlling inductor current flow during PWM on-time. Use Value: 67mΩ RDS(ON) limits conduction loss to <850mW at 3.6A, enabling >92% efficiency at 1MHz switching. |
Use Scenario: Inrush current limiting and hot-swap protection for USB-C PD ports in docking stations. IC Role / Device Role: Low-side power switch isolating downstream 5V/20V rails during plug insertion or fault events. Use Value: Fast 4.7ns turn-on delay and 16.5ns fall time enable precise 100µs fault response, meeting USB PD 3.1 timing requirements. |
| LED Backlight Driver | Industrial Sensor Power Gate |
|
Use Scenario: PWM dimming control for 3–6 white LED strings in automotive instrument clusters. IC Role / Device Role: Constant-current sink switch modulating LED cathode current at 200Hz–20kHz. Use Value: 0.6–1.2V VSD ensures minimal forward drop across internal body diode during PWM off-cycle, preserving dimming linearity. |
Use Scenario: Remote power gating for RS-485 transceivers and analog sensor front-ends in factory automation PLCs. IC Role / Device Role: Always-on supply switch enabling zero-quiescent-current sleep mode between measurement cycles. Use Value: 1.0µA IDSS leakage at 30V ensures <3µW standby loss per channel-critical for battery-backed field devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LVT-13 | Lower RDS(ON) (25mΩ @ 4.5V) but higher Ciss (520pF); same TSOT26 package and 30V rating. | Better for high-current, low-frequency (<500kHz) applications where conduction loss dominates; less suitable for >1MHz due to increased switching loss. | Select when optimizing for <1A continuous load efficiency over 1–3MHz switching; verify gate driver can source 650mA peak. |
| AO3414 | Higher RDS(ON) (55mΩ @ 4.5V), lower Qg (2.4nC); SOT-23-3 package (3-pin, no thermal pad). | Acceptable for <2A loads with relaxed thermal constraints; lacks redundant pins and thermal pad for sustained 3A operation. | Choose only for cost-sensitive, low-power designs where PCB area is not constrained and thermal margin ≥25°C is available. |
Compared with DMN3066LVT-13, DMN3025LVT-13 trades higher switching loss for lower conduction loss, while AO3414 sacrifices thermal performance and layout flexibility for lower unit cost-making DMN3066LVT-13 the balanced choice for 3A, 1–2MHz industrial power stages.
Availability
DMN3066LVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C load switching, and LED backlighting requiring stable component supply across production lifecycles.
Supply support for DMN3066LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.
This MOSFET belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for high-efficiency, space-constrained power management in consumer, industrial, and computing applications where low gate drive voltage and thermal performance are critical.
FAQ
What is the maximum safe operating junction temperature for DMN3066LVT-13?
The absolute maximum junction temperature is +150°C, verified by transient thermal resistance curves and SOA testing. Operation above 125°C requires derating RDS(ON) by 1.8× and limiting pulse duration to ≤10ms at 21A to avoid thermal runaway.
Can DMN3066LVT-13 be used in a high-side configuration with 12V gate drive?
Yes-its ±12V gate-source rating and 30V VDSS support high-side use with bootstrap gate drivers. However, the 0.5–1.5V VGS(TH) range means full enhancement requires ≥4.5V gate over source; ensure bootstrap capacitor sustains >4.5V during duty cycles >90%.
Does DMN3066LVT-13 require external gate resistors for EMI control?
A 5–10Ω series gate resistor is recommended to dampen ringing caused by Lg–Ciss resonance. The 5.1Ω typical gate resistance and 42pF Crss make it susceptible to oscillation with low-impedance drivers; omitting the resistor risks shoot-through in half-bridge layouts.
Is the TSOT26 package compatible with standard reflow profiles for lead-free assembly?
Yes-the device is fully RoHS-compliant and qualified for JEDEC J-STD-020 Level 1 moisture sensitivity. It withstands peak reflow temperatures up to 260°C for ≤60 seconds, matching IPC-7095B Class 3 requirements for automated SMT lines.
DMN3066LVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 328 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3066LVT-13 FAQ
1.How can I place an order for DMN3066LVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3066LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3066LVT-13 reliable?
The price and inventory of DMN3066LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3066LVT-13 is usually 5 days.
3.What payment methods are accepted for DMN3066LVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3066LVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3066LVT-13?
DMN3066LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3066LVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3066LVT-13?
For technical support, including DMN3066LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3066LVT-13 requirements.
6.How does Aetrix verify that DMN3066LVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN3066LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3066LVT-13 meets industry standards.
7.What is the process for return or replacement of DMN3066LVT-13?
All DMN3066LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3066LVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3066LVT-13 part is unused and in its original packaging.
Return procedure for DMN3066LVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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