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Diodes Incorporated DMN3066LVT-7
- Part No.:
- DMN3066LVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3066LVT-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,443
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Product details
Overview
DMN3066LVT from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30 V VDSS, 67 mΩ RDS(ON) @ 4.5 V VGS, 3.6 A ID at 25°C, ESD-protected gate, and TSOT26 package - deployed in DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN3066LVT datasheet, DMN3066LVT pinout, DMN3066LVT application, or DMN3066LVT equivalent, key selection criteria include low-voltage gate drive compatibility (2.5–4.5 V), junction-to-ambient thermal resistance (93 °C/W with copper pad), and fast switching performance (tF = 16.5 ns, Qg = 4.0 nC).
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 4.0 nC) and low output capacitance (Coss = 58 pF), enabling efficient operation in synchronous buck topologies with 5–15 V input rails.
Its gate threshold voltage range (0.5–1.5 V) ensures reliable turn-on with 3.3 V logic-level drivers, and its 150 °C maximum junction temperature supports operation in thermally constrained portable and automotive interior modules without derating below 2.9 A at 70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports 24 V nominal input systems with 25% margin against transients |
| RDS(ON) | 67 mΩ @ 4.5 V VGS - enables ≤0.3 W conduction loss at 2.5 A continuous current |
| ID (25°C) | 3.6 A - rated for sustained load in compact DC-DC point-of-load regulators |
| Qg | 4.0 nC - allows fast switching with low driver power demand (e.g., <10 mW at 1 MHz) |
| Ciss | 328 pF - minimizes gate drive energy and improves noise immunity in high-dV/dt environments |
| tF | 16.5 ns - reduces switching losses in 500 kHz–2 MHz power stages |
| RθJA | 93 °C/W (with 1-in² copper) - permits >0.8 W dissipation at ΔT = 75°C in space-constrained layouts |
Pinout & Package
Package: TSOT26 - ultra-thin (max 1.0 mm height), 6-pin surface-mount package with exposed drain pad for thermal enhancement; RoHS-compliant matte tin finish on copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to substrate; requires low-impedance PCB ground plane for thermal and EMI control |
| 2 (Gate) | Control terminal for channel modulation | ESD-protected input; driven by 3.3 V/5 V logic; gate resistor ≥10 Ω recommended for ringing suppression |
| 3 (Drain) | Main power output node | Connected to internal die backside; soldered to large copper area for heat dissipation |
| 4 (Source) | Redundant source connection | Parallel path to Pin 1; must be routed to same net to reduce source inductance in high-di/dt switching |
| 5 (Drain) | Redundant drain connection | Parallel path to Pin 3; ties directly to thermal pad; critical for thermal performance and SOA compliance |
| 6 (Gate) | Secondary gate terminal | Electrically identical to Pin 2; used for layout symmetry and reduced gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V VGS | 98 mΩ - enables use with battery-powered microcontrollers lacking dedicated gate drivers |
| Low Ciss/Coss ratio | 328 pF / 58 pF = 5.7 - improves reverse recovery behavior and reduces shoot-through risk in half-bridge configurations |
| Fast tD(OFF) | 26.5 ns - shortens dead-time requirements in synchronous rectification, increasing efficiency above 85% |
| ESD-protected gate | HBM rating ≥2 kV - eliminates need for external gate protection in assembly and field handling |
| Green compound (halogen/antimony-free) | <900 ppm Br+Cl, <1000 ppm Sb - meets IPC-1752A Tier 2 reporting and automotive OEM sustainability mandates |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
|
Use Scenario: 12 V input to 5 V/3 A output in industrial HMIs with tight board area constraints. IC Role / Device Role: Synchronous high-side switch in fixed-frequency 1 MHz buck regulator. Use Value: 67 mΩ RDS(ON) limits conduction loss to 420 mW at full load, enabling passive cooling in sealed enclosures. |
Use Scenario: PWM-controlled white LED string (3×) in automotive center console display. IC Role / Device Role: Low-side current sink switch modulating LED current up to 1.2 A peak. Use Value: Fast 16.5 ns fall time ensures precise dimming resolution at 20 kHz PWM without visible flicker. |
| USB-C Power Delivery Sink | Portable Medical Sensor Power Path |
|
Use Scenario: Input power switch managing 5–20 V USB-C PD negotiation before buck conversion. IC Role / Device Role: Hot-swap FET controlling inrush and reverse-current blocking. Use Value: 30 V VDSS and ±12 V VGSS withstand full PD voltage range; low Qgd/Qgs ratio (2.17) suppresses Miller-induced turn-on. |
Use Scenario: Battery-backed power path in handheld ECG monitor requiring zero-power shutdown mode. IC Role / Device Role: Load switch isolating main Li-ion supply from sensor analog front-end during sleep. Use Value: 1 µA max IDSS and 10 µA max IGSS preserve battery life over multi-week standby periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LVT-7 | Lower RDS(ON) (25 mΩ @ 4.5 V) but higher Qg (6.2 nC); same TSOT26 package | Better conduction loss at high current; less suitable for >1 MHz switching due to increased gate drive loss | Select when thermal budget dominates over switching frequency; verify gate driver slew rate capability. |
| AO3400A | Higher RDS(ON) (43 mΩ @ 4.5 V), no ESD protection, different pinout (S-G-D-S-G-D vs. S-G-D-D-S-G) | Requires external gate protection; incompatible pin mapping prevents drop-in replacement | Choose only for cost-sensitive non-automotive designs where ESD robustness is managed externally. |
Compared with DMN3066LVT, DMN3025LVT-7 delivers lower conduction loss but demands more gate drive power, while AO3400A lacks integrated ESD protection and requires PCB redesign - making DMN3066LVT optimal for space-constrained, reliability-critical 3.3 V–5 V logic-driven power switches.
Availability
DMN3066LVT is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and USB-C power delivery sinks requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.
Supply support for DMN3066LVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
The DMN3066LVT belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered for high-efficiency, low-voltage gate drive in portable, automotive interior, and industrial power conversion systems.
FAQ
What is the maximum safe operating junction temperature for DMN3066LVT?
The absolute maximum junction temperature is +150°C per the datasheet. Operation at this limit requires strict thermal design: 93 °C/W RθJA with 1-inch² copper, ambient ≤75°C, and derated current to 2.9 A at +70°C. Exceeding 150°C risks permanent parametric shift and bond-wire failure.
Can DMN3066LVT be used with 3.3 V GPIO without a level shifter?
Yes - its VGS(TH) range (0.5–1.5 V) and guaranteed RDS(ON) of 98 mΩ at 2.5 V VGS ensure full enhancement with standard 3.3 V CMOS outputs. At 3.3 V, typical RDS(ON) drops to ~45 mΩ, supporting 3.6 A with <500 mW loss.
Does DMN3066LVT require external gate resistors in typical applications?
A series gate resistor (10–22 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Ciss. Omission may cause ringing >2 V overshoot, increasing switching loss and EMI; values >47 Ω unnecessarily slow tR/tF and raise Qg-related losses.
How does the TSOT26 package affect thermal performance compared to SO-8?
TSOT26's smaller footprint (2.9 × 2.8 mm) reduces copper area, raising RθJA to 93 °C/W (vs. ~62 °C/W for SO-8 with same pad). However, its thinner profile (≤1.0 mm) improves airflow access and enables double-sided cooling in stacked PCBs - critical for ultra-thin consumer devices.
DMN3066LVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 328 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3066LVT-7 FAQ
1.How can I place an order for DMN3066LVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3066LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3066LVT-7 reliable?
The price and inventory of DMN3066LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3066LVT-7 is usually 5 days.
3.What payment methods are accepted for DMN3066LVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3066LVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3066LVT-7?
DMN3066LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3066LVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3066LVT-7?
For technical support, including DMN3066LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3066LVT-7 requirements.
6.How does Aetrix verify that DMN3066LVT-7 is sourced from the original manufacturer or authorized distributors?
All DMN3066LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3066LVT-7 meets industry standards.
7.What is the process for return or replacement of DMN3066LVT-7?
All DMN3066LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3066LVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3066LVT-7 part is unused and in its original packaging.
Return procedure for DMN3066LVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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