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Diodes Incorporated DMN3066LVTQ-13

Part No.:
DMN3066LVTQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN3066LVTQ-13.pdf
Description:
MOSFET BVDSS: 25V~30V TSOT26 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,018

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Product details

Overview

DMN3066LVTQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 67mΩ RDS(ON) @ 4.5V VGS, and 3.6A continuous drain current at +25°C - designed for automotive backlighting, DC-DC converters, and power-management functions.

For engineers reviewing the DMN3066LVTQ datasheet, DMN3066LVTQ pinout, DMN3066LVTQ application, or DMN3066LVTQ equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, AEC-Q101 qualification, TSOT26 thermal performance (RθJA = 93°C/W with copper pad), and ESD-protected gate for robust automotive PCB layout.

Technical Context

This MOSFET operates as a low-voltage, logic-level switch optimized for 3.3V/5V control interfaces in automotive subsystems. Its gate threshold voltage (0.5–1.5V) enables reliable turn-on with standard microcontroller GPIOs, while its low input capacitance (Ciss = 328pF) and fast switching (tD(ON) = 4.7ns) support high-frequency DC-DC operation up to several hundred kHz.

The device integrates an intrinsic body diode (VSD = 0.6–1.2V @ 0.6A) and features low gate charge (Qg = 4.0nC), enabling efficient synchronous rectification and minimizing driver losses. Thermal design is supported by IATF 16949-certified manufacturing and validated junction-to-ambient resistance under defined PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - supports 24V automotive rail with margin for transients
RDS(ON)67mΩ @ 4.5V VGS - enables <150mW conduction loss at 3.6A
ID (continuous)3.6A @ +25°C - rated for sustained load in compact TSOT26 footprint
Ciss328pF - reduces gate drive power and improves switching efficiency
Qg4.0nC - allows fast turn-on with low-current gate drivers (e.g., MCU GPIO)
TJ range−55°C to +150°C - meets automotive under-hood temperature requirements
AEC-Q101Qualified - certified for automotive use with PPAP documentation support

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6mm), lead-free, halogen-free, and RoHS-compliant; optimized for high-density automotive PCBs with minimal thermal resistance when mounted on 1-inch² copper pad.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateLogic-level control input; ESD-protected, threshold 0.5–1.5V
2 (S)SourcePower return path; common reference for gate drive and load current
3 (D)DrainMain power output node; connected internally to pins 4 and 5
4 (D)DrainParallel drain terminal for enhanced current handling and thermal spreading
5 (D)DrainAdditional parallel drain terminal - all three D pins share same internal connection
6 (S)SourceSecond source terminal for reduced source inductance and improved stability

Key Features

FeatureDesign Value
Low RDS(ON) at 4.5V67mΩ enables efficient 3.3V/5V-driven switching in battery-powered modules
ESD-protected gateHBM >2kV - eliminates need for external gate protection in automotive assembly
Low Ciss & Qg328pF / 4.0nC - minimizes driver power and propagation delay in high-frequency SMPS
AEC-Q101 qualificationValidated for automotive reliability including HTOL, TC, UHAST, and ESD stress tests
TSOT26 thermal performanceRθJA = 93°C/W with 1-inch² copper - supports >1W dissipation in space-constrained modules

Applications

Automotive LED Backlighting12V-to-5V Buck Converter

Use Scenario: Driving segmented LED strings in instrument clusters and center displays under wide ambient temperature ranges.

IC Role / Device Role: Low-side PWM switch controlling LED current with precise dimming resolution.

Use Value: 67mΩ RDS(ON) limits self-heating during 100% duty-cycle operation; AEC-Q101 ensures lifetime reliability across −40°C to +105°C ambient.

Use Scenario: High-efficiency step-down conversion for infotainment SoC power rails in start-stop vehicles.

IC Role / Device Role: Synchronous rectifier in 500kHz buck topology with 3.3V gate drive from controller.

Use Value: 4.0nC Qg and 328pF Ciss reduce switching losses; TSOT26 footprint saves board area vs. SO-8 alternatives.

Body Control Module Power SwitchUSB-C Power Delivery Load Switch

Use Scenario: Controlled power enable for HVAC actuators and window lift motors in BCM subassemblies.

IC Role / Device Role: Protected high-side or low-side load switch with overcurrent and thermal foldback.

Use Value: −55°C to +150°C TJ rating supports engine-bay proximity; low VGS(TH) ensures turn-on with 3.3V MCU outputs.

Use Scenario: Inrush-limited 5V/9V/15V load switching for USB-C PD sink ports in automotive docking stations.

IC Role / Device Role: Logic-level controlled power path switch with fast fault response.

Use Value: ESD-protected gate withstands repeated hot-plug events; 30V VDSS accommodates 20V PD transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LVTQ-13Lower RDS(ON) (25mΩ @ 4.5V), higher ID (5.2A), same TSOT26 package and AEC-Q101 qualificationBetter suited for higher-current DC-DC stages where thermal headroom is constrainedSelect when conduction loss must be minimized below 100mW at >4A loads
NTMFS4C06NT1GSame 30V rating but 5.8mΩ RDS(ON) @ 10V; requires 10V gate drive; SO-8FL package (larger footprint, lower RθJA)Targeted at high-power industrial SMPS where gate drive voltage ≥8V is availableChoose only if system uses 10V gate drivers and board space permits SO-8FL

Compared with DMN3025LVTQ-13, this part trades lower RDS(ON) for higher cost and identical qualification; versus NTMFS4C06NT1G, it offers superior logic-level compatibility and smaller footprint but higher conduction loss - ideal for space- and voltage-constrained automotive modules.

Availability

DMN3066LVTQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12V DC-DC converters, and body control module power switching requiring stable component supply across extended temperature and long product lifecycles.

Supply support for DMN3066LVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN3066LVTQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for automotive power management where small size, low gate drive voltage, and extended temperature operation are critical.

FAQ

Is DMN3066LVTQ-13 suitable for 3.3V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.5–1.5V and guaranteed RDS(ON) of 67mΩ at 4.5V VGS, the device fully turns on using standard 3.3V GPIO outputs. Its low Ciss (328pF) further ensures fast switching without excessive gate drive current.

What is the maximum continuous drain current at +85°C ambient?

At +85°C ambient temperature and with the recommended 1-inch² copper pad, the DMN3066LVTQ-13 supports 2.9A continuous drain current. This is derived from its 1.3W power dissipation rating and 93°C/W thermal resistance under that layout condition.

Does DMN3066LVTQ-13 include integrated ESD protection?

Yes. The device features an ESD-protected gate structure rated to >2kV HBM per JESD22-A114, eliminating the need for external gate protection diodes in typical automotive PCB environments.

Can DMN3066LVTQ-13 be used in high-frequency switching applications above 1MHz?

No. While its tD(ON) is 4.7ns and Qg is low (4.0nC), the device's RDS(ON) increases significantly above 100kHz due to package parasitics and thermal limitations. It is optimized for DC-DC converters operating up to 500kHz, not RF or MHz-range switching.

DMN3066LVTQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
328 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
900mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMN3066LVTQ-13 FAQ

1.How can I place an order for DMN3066LVTQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3066LVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3066LVTQ-13 reliable?

The price and inventory of DMN3066LVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3066LVTQ-13 is usually 5 days.

3.What payment methods are accepted for DMN3066LVTQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3066LVTQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3066LVTQ-13?

DMN3066LVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3066LVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3066LVTQ-13?

For technical support, including DMN3066LVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3066LVTQ-13 requirements.

6.How does Aetrix verify that DMN3066LVTQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN3066LVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3066LVTQ-13 meets industry standards.

7.What is the process for return or replacement of DMN3066LVTQ-13?

All DMN3066LVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3066LVTQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3066LVTQ-13 part is unused and in its original packaging.

Return procedure for DMN3066LVTQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3066LVTQ-13 Tags

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  • Diodes Incorporated
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