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Diodes Incorporated DMN3066LVTQ-7
- Part No.:
- DMN3066LVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3066LVTQ-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,188
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Product details
Overview
DMN3066LVTQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 67mΩ RDS(ON) @ 4.5V VGS, and 3.6A continuous drain current at +25°C - designed for automotive backlighting, DC-DC converters, and power-management functions.
For engineers reviewing the DMN3066LVTQ datasheet, DMN3066LVTQ pinout, DMN3066LVTQ application, or DMN3066LVTQ equivalent, key selection criteria include its low RDS(ON) at 2.5–4.5V gate drive, AEC-Q101 qualification, TSOT26 thermal performance (RθJA = 93°C/W with copper pad), and ESD-protected gate for robust automotive deployment.
Technical Context
This MOSFET operates as a low-voltage, logic-level switch optimized for 3.3V/5V control interfaces in automotive subsystems. Its gate threshold voltage (0.5–1.5V) ensures reliable turn-on with standard microcontroller I/O, while low input capacitance (Ciss = 328pF) and fast switching (tD(ON) = 4.7ns, tF = 16.5ns) support high-frequency DC-DC operation up to several hundred kHz.
The device integrates a body diode with VSD = 0.6–1.2V @ 0.6A and exhibits normalized RDS(ON) drift of ≤1.8× over –55°C to +150°C junction range. Thermal design is enabled by its 1.3W power dissipation rating on a 1-inch² copper pad and IATF 16949-certified manufacturing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V automotive rail with 20% margin against transients |
| RDS(ON) | 67mΩ @ 4.5V VGS - enables <150mW conduction loss at 3.6A in compact layout |
| ID (continuous) | 3.6A @ +25°C - sustains full load in LED backlight drivers without forced cooling |
| Ciss | 328pF - reduces gate drive power requirement for 3.3V MCU control |
| Qg | 4.0nC - allows efficient switching at >500kHz in synchronous buck stages |
| TJ range | –55°C to +150°C - meets under-hood temperature requirements per AEC-Q101 |
| VGSS | ±12V - withstands gate drive overshoot in noisy automotive environments |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1, with matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input; ESD-protected; requires ≤12V drive; low Ciss enables fast edge rates |
| 2 (S) | Source | Power return node; internally connected to exposed thermal pad; must be soldered to PCB copper for thermal relief |
| 3 (D) | Drain | Main current path; tied to high-side or low-side switching node; handles 30V transient spikes |
| 4 (S) | Source (duplicate) | Second source terminal for enhanced current sharing and thermal conduction to PCB |
| 5 (D) | Drain (duplicate) | Second drain terminal to reduce package inductance in high-di/dt switching paths |
| 6 (G) | Gate (duplicate) | Redundant gate connection to minimize gate loop inductance and suppress oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V VGS | 98mΩ - enables direct drive from 2.5V logic or low-dropout regulators without level-shifting |
| Fast switching with low Qgd | 1.3nC - minimizes Miller plateau time and improves efficiency in hard-switched topologies |
| ESD-protected gate | HBM ≥2kV - eliminates need for external gate protection in assembly and field operation |
| AEC-Q101 qualification | PPAP-capable, IATF 16949 manufacturing - satisfies automotive OEM change-control and traceability requirements |
| Green compound (UL 94V-0) | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - complies with global automotive material declarations |
Applications
| Automotive LED Backlighting | Automotive DC-DC Converters |
|---|---|
Use Scenario: Driving segmented LED strings in instrument clusters and center displays under wide ambient temperature ranges. IC Role / Device Role / Timing Role: Low-side constant-current switch controlling PWM dimming frequency up to 20kHz. Use Value: 67mΩ RDS(ON) limits power loss to <0.8W at 3.6A, enabling passive thermal management in space-constrained dash modules. | Use Scenario: High-efficiency synchronous rectification in 5V/3.3V buck converters powering ADAS sensors and infotainment SoCs. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–600kHz with tight dead-time control. Use Value: 4.0nC total gate charge and 16.5ns fall time reduce switching losses by ≥18% vs. legacy 100mΩ MOSFETs at 500kHz. |
| Automotive Power Management Units | Engine Control Unit (ECU) Load Switching |
Use Scenario: Selective power gating of sub-systems (e.g., CAN transceivers, LIN buses) during sleep mode to meet ISO 16750 quiescent current targets. IC Role / Device Role / Timing Role: High-side or low-side load switch with controlled inrush and reverse-current blocking. Use Value: 1.5V max VGS(TH) ensures clean turn-on at cold cranking voltages (≥6V battery), while 1μA IDSS prevents leakage-induced wake-up. | Use Scenario: Isolating solenoid drivers, fuel injector circuits, and HVAC actuators from main ECU power rails. IC Role / Device Role / Timing Role: Protected high-current switch with integrated gate ESD clamp and thermal foldback. Use Value: 21A pulsed rating (10μs) supports peak inductive kickback suppression; RθJA = 93°C/W enables 3.5A sustained current without derating in sealed ECU housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LVTQ-7 | Lower RDS(ON) (25mΩ @ 4.5V), higher Qg (6.5nC), same TSOT26 package | Better conduction loss but slower switching; less suitable for >300kHz DC-DC | Select when thermal budget dominates over switching frequency constraints |
| NVMFS5C426NLT1G | Higher VDSS (40V), lower RDS(ON) (3.2mΩ @ 10V), SO-8FL package, not logic-level | Requires gate driver for 3.3V control; superior for 12V/24V primary-side switching | Choose only if system uses dedicated gate drivers and needs higher voltage margin |
Compared with DMN3025LVTQ-7 and NVMFS5C426NLT1G, the DMN3066LVTQ uniquely balances low gate-charge (4.0nC), logic-level compatibility (VGS(TH) ≤1.5V), and AEC-Q101 compliance in TSOT26 - making it optimal for cost- and space-sensitive automotive loads where 30V rating suffices and MCU-direct drive is required.
Availability
DMN3066LVTQ is available at Aetrix Electronics and suitable for automotive LED backlighting, DC-DC converters, and power-management units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3066LVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certification.
The DMN3066LVTQ belongs to Diodes' Automotive Logic-Level MOSFET product line, engineered specifically for AEC-Q101 compliance, low-voltage gate drive, and thermal resilience in engine bay and cabin electronics.
FAQ
What is the maximum continuous drain current for DMN3066LVTQ at +70°C ambient?
The DMN3066LVTQ supports 2.9A continuous drain current at +70°C ambient temperature with standard FR-4 PCB mounting (2oz copper, minimum pad layout). This derating reflects thermal resistance (RθJA = 129°C/W) and junction temperature limit of +150°C. For higher current at elevated ambient, use the 1-inch² copper plate layout which improves RθJA to 93°C/W and enables 3.5A at +70°C.
Does DMN3066LVTQ require external gate resistors in automotive applications?
No external gate resistor is required for basic switching, as the device's low gate resistance (5.1Ω) and 4.0nC total charge enable clean turn-on/turn-off with typical 3.3V MCU GPIOs. However, a 5–10Ω series resistor is recommended to dampen potential gate ringing in high-di/dt layouts (e.g., solenoid drivers), especially when routing exceeds 2cm or shares traces with noisy systems like ignition coils.
How does the body diode performance impact synchronous rectifier use?
The DMN3066LVTQ's body diode has VSD = 0.6–1.2V at 0.6A and exhibits soft recovery characteristics, making it usable for asynchronous flyback or freewheeling in low-frequency (<100kHz) converters. For synchronous rectification above 200kHz, external Schottky bypass is advised due to reverse recovery time limitations - the datasheet does not specify trr, and Crss = 42pF indicates moderate Miller coupling that may cause shoot-through if not carefully timed.
Is the TSOT26 package thermally adequate for 3.6A continuous operation?
Yes, when mounted on a 1-inch² copper pad (2oz), the TSOT26 package achieves RθJA = 93°C/W, limiting junction temperature rise to ~340°C at 3.6A - but this exceeds the 150°C absolute max. In practice, 3.6A is rated only at +25°C ambient; at +70°C, derated current is 3.5A. For sustained 3.6A, forced airflow or thermal vias under the exposed pad are required to maintain TJ ≤150°C.
DMN3066LVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 328 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3066LVTQ-7 FAQ
1.How can I place an order for DMN3066LVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3066LVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3066LVTQ-7 reliable?
The price and inventory of DMN3066LVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3066LVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3066LVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3066LVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3066LVTQ-7?
DMN3066LVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3066LVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3066LVTQ-7?
For technical support, including DMN3066LVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3066LVTQ-7 requirements.
6.How does Aetrix verify that DMN3066LVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3066LVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3066LVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3066LVTQ-7?
All DMN3066LVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3066LVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3066LVTQ-7 part is unused and in its original packaging.
Return procedure for DMN3066LVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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