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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3069L-13

Name: DMN3069L-13
Brand: Diodes Incorporated
SKU: DMN3069L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3069L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3069L-13.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN3069L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 30mΩ R_DS(ON) @ 10V V_GS, and 5.3A continuous drain current at +25°C. It features low gate threshold (1.0–1.8V), ESD-protected gate, and fast switching (t_F = 5.2ns), optimized for compact load-switching and DC-DC converter power stages.

For engineers reviewing the DMN3069L-13 datasheet, DMN3069L-13 pinout, DMN3069L-13 application, or DMN3069L-13 equivalent, key selection criteria include R_DS(ON) at 4.5V (40mΩ), thermal resistance (97.6°C/W on 1-in² copper), body diode forward voltage (0.7–1.2V), and gate charge (4.3nC @ 4.5V) for low-loss, high-frequency operation in space-constrained power rails.

Technical Context

This MOSFET employs a planar trench-gate structure to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 30A pulsed current. Its gate threshold voltage range (1.0–1.8V) enables direct drive from 3.3V logic, and its low input capacitance (C_iss = 309pF) supports efficient high-speed switching with minimal driver loss.

The device integrates ESD protection on the gate terminal (±20V HBM), operates across –55°C to +150°C junction temperature, and exhibits normalized R_DS(ON) variation of <1.6× over full temperature range at V_GS = 10V, ensuring stable conduction in thermally demanding environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche; suitable for 24V rail and 5V/3.3V logic-level systems.
R_DS(ON) @ 10V	30mΩ - Conduction loss of 0.84W at 5.3A; enables >95% efficiency in 12V-to-5V buck converters.
R_DS(ON) @ 4.5V	40mΩ - Ensures reliable turn-on with standard 3.3V GPIO or LDO outputs without level-shifting.
Q_g @ 4.5V	4.3nC - Low gate charge reduces driver power dissipation and enables >1MHz PWM operation.
t_F	5.2ns - Fast fall time minimizes switching overlap loss in synchronous rectifiers and half-bridge topologies.
R_θJA (1-in² Cu)	97.6°C/W - Thermal performance allows 1.3W continuous dissipation at ambient ≤70°C with standard PCB layout.
V_GS(TH)	1.0–1.8V - Guaranteed turn-on with 2.5V logic; avoids marginal biasing in battery-powered systems.

Pinout & Package

SOT23-3 package: ultra-compact surface-mount plastic case (2.4mm × 1.3mm × 1.0mm), UL 94V-0 rated, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; serves as reference for gate drive and body diode cathode.
2 (Gate)	Control electrode for channel formation	ESD-protected input requiring <10µA leakage; drives with <4.3nC charge for full enhancement.
3 (Drain)	Main current output terminal	High-side or low-side switch node; handles 30V transients and 30A pulsed current per SOA curve.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	40mΩ enables use with 3.3V microcontrollers without external gate drivers in portable power switches.
Fast switching speed	Combined t_D(ON) + t_R + t_D(OFF) + t_F < 20ns reduces transition losses in high-frequency DC-DC controllers.
ESD-protected gate	HBM ±20V rating eliminates need for external gate protection in assembly and field handling.
Low input leakage	IGSS ≤ ±10µA at ±16V ensures stable gate bias during sleep modes and battery-backed operation.

Applications

Battery-Powered Load Switch

USB Power Delivery Switch

Use Scenario: Enabling/disabling power to peripherals in handheld medical devices with Li-ion battery input (3.0–4.2V).

IC Role / Device Role: Low-side load switch controlling 500mA–2A loads with minimal voltage drop and zero static current draw.

Use Value: 40mΩ R_DS(ON) at 3.3V V_GS limits dropout to <80mV at 2A, preserving battery runtime and enabling true off-state isolation.

Use Scenario: Hot-swap control for USB-C ports delivering up to 3A at 5V in docking stations.

IC Role / Device Role: High-side power switch with controlled inrush limiting via gate slew rate.

Use Value: 30mΩ R_DS(ON) @ 10V and 5.3A rating support full USB PD 3.0 current without derating; fast t_F prevents shoot-through during dynamic load changes.

Point-of-Load DC-DC Converter

Automotive Body Control Module

Use Scenario: Synchronous rectifier in 12V-to-3.3V buck converter for FPGA I/O supply in industrial PLCs.

IC Role / Device Role: Low-side synchronous FET in 500kHz–1MHz switching regulator.

Use Value: 4.3nC Q_g @ 4.5V reduces gate driver loss by >40% vs. comparable 60mΩ parts, improving light-load efficiency.

Use Scenario: LED headlight dimming control and sensor power gating in 12V automotive subsystems.

IC Role / Device Role: Logic-level N-channel switch driven directly by CAN/LIN microcontroller GPIO.

Use Value: AEC-Q101 qualified variant available; 150°C max T_J and <1.6× R_DS(ON) drift ensure stable dimming linearity across under-hood temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025L-7	Lower R_DS(ON) (25mΩ @ 10V), higher Q_g (10.5nC), same SOT23 package	Better conduction loss but slower switching; suited for <500kHz applications where efficiency dominates speed	Select when thermal margin is tight and switching frequency ≤300kHz.
AO3400	Higher R_DS(ON) (44mΩ @ 4.5V), no ESD protection, same footprint	Lacks gate ESD hardening; requires external protection in automated assembly or harsh ESD environments	Choose only for cost-sensitive, non-automotive consumer designs with controlled ESD handling.

Compared with DMN3069L-13, DMN3025L-7 trades faster switching for lower conduction loss, while AO3400 sacrifices gate robustness and R_DS(ON) performance for lower unit cost-making DMN3069L-13 optimal for balanced high-frequency, logic-level, and reliability-critical power switching.

Availability

DMN3069L-13 is available at Aetrix Electronics and suitable for battery-powered load switching, USB-C power delivery, point-of-load DC-DC conversion, and automotive body control modules requiring stable component supply and consistent SOT23-3 form factor.

Supply support for DMN3069L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMN3069L belongs to Diodes' logic-level N-channel MOSFET product line, engineered for low-voltage gate drive compatibility, high-efficiency power switching, and robust operation in thermally constrained and ESD-prone environments.

FAQ

What is the maximum continuous drain current for DMN3069L-13 at +70°C ambient?

At TA = +70°C with standard FR-4 PCB (2oz copper, 1-inch square pad), the maximum continuous drain current is 4.3A. This is derated from the +25°C rating of 5.3A due to thermal resistance (RθJA = 97.6°C/W) and junction temperature limit of +150°C. Actual current capability depends on board layout and airflow.

Does DMN3069L-13 have integrated body diode recovery characteristics suitable for synchronous rectification?

Yes-the DMN3069L-13 includes an intrinsic body diode with typical forward voltage of 0.7–1.2V at 1A and reverse recovery time optimized for synchronous buck operation. Its low Q_rr (implied by Crss = 47pF and fast t_F) supports efficient freewheeling in 500kHz–1MHz converters without external Schottky supplementation.

Can DMN3069L-13 be used in automotive applications?

The DMN3069L-13 is not AEC-Q101 qualified in this standard packaging, but Diodes offers an automotive-grade variant (DMN3069LQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended qualification testing. For non-safety-critical body electronics, the standard part may be used subject to internal stress screening and customer validation.

What is the recommended gate resistor value for driving DMN3069L-13 at 1MHz in a buck converter?

A 6Ω gate resistor is validated in the datasheet for 1MHz operation (t_D(ON) = 1.6ns, t_F = 5.2ns). This value balances switching speed and ringing suppression. For improved EMI, increase to 10–15Ω; for minimal loss in high-efficiency designs, reduce to 3–4Ω with careful layout to avoid gate oscillation.

DMN3069L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 309 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 800mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3069L-13 FAQ

1.How can I place an order for DMN3069L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3069L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3069L-13 reliable?

The price and inventory of DMN3069L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3069L-13 is usually 5 days.

3.What payment methods are accepted for DMN3069L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3069L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3069L-13?

DMN3069L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3069L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3069L-13?

For technical support, including DMN3069L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3069L-13 requirements.

6.How does Aetrix verify that DMN3069L-13 is sourced from the original manufacturer or authorized distributors?

All DMN3069L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3069L-13 meets industry standards.

7.What is the process for return or replacement of DMN3069L-13?

All DMN3069L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3069L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3069L-13 part is unused and in its original packaging.

Return procedure for DMN3069L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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