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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3069L-7

Name: DMN3069L-7
Brand: Diodes Incorporated
SKU: DMN3069L-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3069L-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3069L-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN3069L-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 30 mΩ R_DS(ON) @ 10V V_GS, and 5.3A continuous drain current at +25°C - optimized for high-efficiency load switching and DC-DC converter power stages.

For engineers reviewing the DMN3069L-7 datasheet, DMN3069L-7 pinout, DMN3069L-7 application, or DMN3069L-7 equivalent, key selection criteria include low gate threshold (1.0–1.8V), fast switching (t_D(ON) = 1.6 ns), ESD-protected gate, and thermal resistance of 97.6°C/W under enhanced PCB layout - critical for compact, thermally constrained power management designs.

Technical Context

This MOSFET employs a planar trench-gate structure to achieve low R_DS(ON) while maintaining robust body diode performance (V_SD = 0.7–1.2V) and low input capacitance (C_iss = 309 pF). Its gate threshold voltage (1.0–1.8V) enables direct drive from 3.3V logic without level shifting.

The device supports pulsed drain currents up to 30A (10µs, 1% duty), operates across –55°C to +150°C junction temperature, and features fully lead-free, halogen-free "Green" construction compliant with AEC-Q101 requirements for automotive-grade reliability when qualified per PPAP.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche conduction; suitable for 24V rail and 5V/12V point-of-load systems.
R_DS(ON)	30 mΩ @ V_GS = 10V, ID = 4.0A - Enables <120 mW conduction loss at 2A, reducing thermal stress in space-constrained layouts.
I_D (continuous)	5.3 A @ T_A = +25°C - Supports typical load switch applications up to ~12W with standard FR-4 PCB cooling.
Q_g	8.1 nC @ V_GS = 10V - Low gate charge minimizes driver power and switching losses in high-frequency DC-DC converters.
C_iss	309 pF @ V_DS = 15V - Reduces Miller effect and improves turn-on stability in synchronous buck topologies.
t_D(ON)	1.6 ns - Enables sub-10 MHz switching with minimal dead-time overhead in high-efficiency SMPS designs.
V_GS(TH)	1.0–1.8 V - Ensures reliable turn-on from 3.3V microcontrollers and logic outputs without external biasing.

Pinout & Package

Package: SOT23 - surface-mount plastic case, 0.009 g weight, UL 94V-0 rated molding compound, matte tin annealed terminals solderable per MIL-STD-202.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Current sink node	Connected to high-side or low-side power path; handles full load current and withstands 30V transients.
Gate (G)	Control input	ESD-protected MOS gate requiring ≤±20V drive; low C_iss allows fast edge rates with minimal driver strength.
Source (S)	Reference node / return path	Common reference for gate drive; forms intrinsic body diode anode for reverse-current protection in buck converters.

Key Features

Feature	Design Value
Low R_DS(ON)	30 mΩ @ 10V enables <120 mW conduction loss at 2A - reduces heatsinking needs in portable power switches.
Low V_GS(TH)	1.0–1.8V threshold ensures full enhancement with 3.3V logic - eliminates need for gate drivers in MCU-controlled loads.
Fast switching	1.6 ns turn-on delay + 2.3 ns rise time supports >5 MHz PWM operation - improves efficiency in compact DC-DC modules.
ESD-protected gate	HBM rating ≥2 kV (per AEC-Q101) - enhances manufacturing yield and field reliability in unshielded assembly environments.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant - meets automotive and industrial environmental compliance mandates without derating.

Applications

Battery Load Switch

USB Power Delivery Switch

Use Scenario: Isolating Li-ion battery from system during sleep or fault conditions in wearables and IoT sensors.

IC Role / Device Role: Low-side load switch controlling power domain enablement via GPIO.

Use Value: 30 mΩ R_DS(ON) limits dropout to <60 mV at 2A, preserving battery runtime; 1.0–1.8V V_GS(TH) ensures compatibility with 3.3V MCU I/O.

Use Scenario: Enabling/disabling 5V USB VBUS path in host devices with overcurrent protection.

IC Role / Device Role: High-side power switch with integrated body diode for reverse-current blocking.

Use Value: Fast 1.6 ns t_D(ON) supports dynamic port power control; ESD protection prevents gate damage during hot-plug events.

DC-DC Synchronous Rectifier

Automotive Body Control Module

Use Scenario: Replacing Schottky diode in 12V-to-3.3V buck converter for improved efficiency.

IC Role / Device Role: Low-side synchronous rectifier driven by controller's complementary output.

Use Value: 40 mΩ R_DS(ON) @ 4.5V V_GS cuts conduction loss by >50% vs. 0.4V Schottky, raising light-load efficiency above 92%.

Use Scenario: Driving LED clusters, solenoids, or small motors in door modules and interior lighting.

IC Role / Device Role: General-purpose N-channel switch interfacing with 5V/12V automotive microcontrollers.

Use Value: AEC-Q101 qualification path available; –55°C to +150°C operating range supports under-hood and cabin deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025L-7	Lower R_DS(ON) (18 mΩ @ 10V), higher Q_g (12.5 nC), same SOT23 package	Better conduction loss but slower switching; requires stronger gate driver	Select when thermal margin is critical and switching frequency ≤2 MHz.
AO3400	Higher R_DS(ON) (42 mΩ @ 10V), no ESD protection, same footprint	Lower cost but reduced gate robustness; not qualified for automotive use	Select for cost-sensitive consumer applications where ESD immunity is managed externally.

Compared with DMN3069L-7, DMN3025L-7 trades faster switching for lower conduction loss, while AO3400 sacrifices gate protection and automotive readiness for price - making DMN3069L-7 optimal for balanced performance, reliability, and manufacturability in space-constrained power switches.

Availability

DMN3069L-7 is available at Aetrix Electronics and suitable for battery load switching, USB power delivery, DC-DC synchronous rectification, and automotive body control modules requiring stable component supply and consistent SOT23 tape-and-reel logistics.

Supply support for DMN3069L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

The DMN3069L-7 belongs to Diodes' advanced low-voltage power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in portable, automotive, and industrial systems.

FAQ

What is the maximum safe operating junction temperature for DMN3069L-7?

The absolute maximum junction temperature is +150°C, with continuous operation supported across –55°C to +150°C. Derating begins at +70°C ambient for the 5.3A rating; thermal resistance drops to 97.6°C/W with enhanced copper pad layout, enabling sustained 4A operation at +85°C ambient.

Does DMN3069L-7 require a gate resistor for typical 3.3V MCU drive?

No external gate resistor is required for basic on/off switching with 3.3V MCUs due to its low 1.0–1.8V threshold and 8.1 nC total gate charge. However, a 10–22Ω series resistor is recommended to dampen ringing in high-frequency (>2 MHz) or high-current (>3A) applications.

Is the body diode suitable for reverse-current protection in USB applications?

Yes - the intrinsic body diode has V_SD = 0.7–1.2V at 1A and supports reverse-current blocking up to 1.35A continuous. It meets USB PD 3.0 reverse-voltage protection requirements when used as a high-side switch with proper thermal management.

Can DMN3069L-7 be used in automotive applications out of the box?

DMN3069L-7 is designed to meet AEC-Q101 stress test requirements and is manufactured in IATF 16949-certified facilities. While the base part is not PPAP-submitted, Diodes offers qualified variants (e.g., DMN3069LQ-7) with full automotive documentation - contact Diodes or Aetrix for qualified part numbers and change-control support.

DMN3069L-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 309 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 800mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3069L-7 FAQ

1.How can I place an order for DMN3069L-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3069L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3069L-7 reliable?

The price and inventory of DMN3069L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3069L-7 is usually 5 days.

3.What payment methods are accepted for DMN3069L-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3069L-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3069L-7?

DMN3069L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3069L-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3069L-7?

For technical support, including DMN3069L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3069L-7 requirements.

6.How does Aetrix verify that DMN3069L-7 is sourced from the original manufacturer or authorized distributors?

All DMN3069L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3069L-7 meets industry standards.

7.What is the process for return or replacement of DMN3069L-7?

All DMN3069L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3069L-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3069L-7 part is unused and in its original packaging.

Return procedure for DMN3069L-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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