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Diodes Incorporated DMN3071LFR4-7
- Part No.:
- DMN3071LFR4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN3071LFR4-7.pdf
- Description:
- MOSFET N-CH 30V 3.4A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,509
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Product details
Overview
DMN3071LFR4 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-RDS(ON) and fast switching in compact power-management circuits. It delivers 3.4 A continuous drain current at VGS = 10 V, 65 mΩ on-resistance, and operates up to 30 V VDSS, making it suitable for load switching in portable LED backlighting and USB power delivery paths.
For engineers reviewing the DMN3071LFR4 datasheet, DMN3071LFR4 pinout, DMN3071LFR4 application, or DMN3071LFR4 equivalent, key selection criteria include its 107 °C/W thermal resistance on 1"×1" PCB, 4.5 V gate drive compatibility, X2-DFN1010-3 footprint, and body diode forward voltage of 0.8–1.2 V at 1 A.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low conduction loss while maintaining controlled gate charge (Qg = 4.5 nC at VGS = 10 V) and fast switching (tF = 1.6 ns). Its RDS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.8× at 150°C.
The device integrates a monolithic body diode with reverse recovery time tRR = 4.2 ns and QRR = 0.5 nC under 100 A/μs di/dt, enabling efficient synchronous rectification and bidirectional current handling in low-voltage DC-DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown |
| RDS(ON) | 65 mΩ @ VGS = 10 V, ID = 3.2 A - Enables <100 mW conduction loss at 3 A, critical for thermally constrained PCBs |
| ID (TA = 25°C) | 3.4 A - Continuous current rating on standard FR-4 with 2 oz copper, defining safe steady-state load capacity |
| Qg | 4.5 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time in PWM control loops |
| RθJA | 107 °C/W - Measured on 1"×1" FR-4 board; sets maximum power dissipation limit before exceeding 150°C junction temperature |
| VGS(TH) | 1.0–2.5 V - Low threshold enables reliable turn-on from 3.3 V logic-level drivers without level-shifting circuitry |
| Ciss | 190 pF - Input capacitance affecting gate drive loop stability and EMI generation during hard-switching events |
Pinout & Package
Package: X2-DFN1010-3 - 1.0 mm × 1.0 mm × 0.39 mm ultra-thin leadless package with exposed drain pad for thermal relief; RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0–10 V logic signal; requires <4.5 nC charge for full enhancement |
| S | Source | Reference node for gate drive and current return path; tied to ground in low-side switch topology |
| D | Drain | High-current output node connected to load or supply rail; electrically and thermally coupled to exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 75 mΩ - Supports direct interface with 4.5 V microcontroller GPIOs without external gate boosting |
| Fast switching speed | tF = 1.6 ns - Reduces switching losses in >1 MHz DC-DC converters and minimizes dead-time requirements |
| Low gate leakage | IGSS ≤ ±100 nA - Ensures stable gate bias in battery-powered systems with multi-week standby duration |
| Green compound packaging | Halogen- and antimony-free, UL 94V-0 rated - Meets IPC-1752A material declaration and automotive PPAP documentation requirements |
| Moisture sensitivity | Level 1 per J-STD-020 - Eliminates bake preconditioning prior to reflow, reducing manufacturing cycle time |
Applications
| LED Backlight Control | USB Power Switch |
|---|---|
|
Use Scenario: Driving white LED strings in smartphone or tablet displays using PWM dimming at 200 Hz–20 kHz. IC Role / Device Role / Timing Role: Low-side constant-current switch synchronizing with display controller timing signals. Use Value: 65 mΩ RDS(ON) limits voltage drop to <200 mV at 3 A, preserving headroom for boost converter output regulation. |
Use Scenario: Enabling/disabling 5 V power to USB peripherals in portable docking stations with overcurrent protection. IC Role / Device Role / Timing Role: Load switch responding to USB PD controller enable signals with <10 μs turn-on delay. Use Value: 4.5 V gate threshold ensures clean turn-on from 3.3 V logic rails, eliminating need for discrete level shifters. |
| Power Bank Output Stage | IoT Sensor Node Power Gating |
|
Use Scenario: Isolating lithium-ion battery output from system loads during deep sleep or fault conditions in portable chargers. IC Role / Device Role / Timing Role: High-efficiency pass element in battery protection IC-controlled power path management. Use Value: 107 °C/W thermal resistance allows 0.5 W dissipation on minimal PCB area, avoiding heatsink requirements. |
Use Scenario: Cycling power to BLE transceivers and environmental sensors in battery-operated smart meters. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch activated by MCU GPIO to extend 10-year battery life. Use Value: Gate leakage <100 nA prevents measurable self-discharge during 30-day sleep cycles between sensor readings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | RDS(ON) = 25 mΩ @ 10 V, but larger X2-DFN2020-6 package (2.0 mm × 2.0 mm) | Higher current capability (6.5 A), unsuitable for space-constrained 1 mm × 1 mm layouts | Select when higher current and lower conduction loss outweigh footprint constraints |
| AO3400 | RDS(ON) = 40 mΩ @ 10 V, SOT-23 package, no halogen-free certification | Larger thermal resistance (200 °C/W), limited to <1.5 A continuous operation on same PCB | Choose only for cost-sensitive non-automotive designs where green compliance is not required |
Compared with DMN3071LFR4, DMN3025LFD-7 offers lower RDS(ON) but doubles footprint area, while AO3400 sacrifices thermal performance and environmental compliance for legacy package compatibility and lower unit cost.
Availability
DMN3071LFR4 is available at Aetrix Electronics and suitable for LED backlighting, USB power delivery, and IoT sensor node power gating requiring stable component supply across production lifecycles.
Supply support for DMN3071LFR4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions and signal integrity components for consumer, industrial, and automotive markets.
This MOSFET belongs to Diodes' "X2-DFN" ultra-compact power switch product line, engineered specifically for space-constrained battery-powered devices needing low gate charge and guaranteed green material compliance.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN3071LFR4 supports continuous operation up to +150°C junction temperature, verified per JEDEC JESD22-A108. At this limit, RDS(ON) increases by ≤80% versus room-temperature value, and safe operating area curves confirm no secondary breakdown risk under DC or pulsed conditions.
Can this MOSFET be used in a high-side configuration?
Yes, the DMN3071LFR4 supports high-side switching when paired with a gate driver capable of providing ≥10 V above the source potential. Its ±20 V VGS rating and 30 V VDSS allow use in 24 V bus applications with appropriate bootstrap or isolated gate drive.
Is the body diode suitable for reverse current conduction?
The integrated body diode has VSD = 0.8–1.2 V at 1 A and tRR = 4.2 ns, making it suitable for low-loss freewheeling in buck converters and reverse-polarity protection. However, it is not rated for continuous reverse conduction beyond 1.5 A per maximum ratings table.
Does this part meet AEC-Q101 qualification?
No - the DMN3071LFR4 is not AEC-Q101 qualified. Diodes Incorporated offers automotive-grade variants (e.g., DMN3071LQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening; contact Diodes directly for qualified alternatives.
DMN3071LFR4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1010-3
DMN3071LFR4-7 FAQ
1.How can I place an order for DMN3071LFR4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3071LFR4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3071LFR4-7 reliable?
The price and inventory of DMN3071LFR4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3071LFR4-7 is usually 5 days.
3.What payment methods are accepted for DMN3071LFR4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3071LFR4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3071LFR4-7?
DMN3071LFR4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3071LFR4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3071LFR4-7?
For technical support, including DMN3071LFR4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3071LFR4-7 requirements.
6.How does Aetrix verify that DMN3071LFR4-7 is sourced from the original manufacturer or authorized distributors?
All DMN3071LFR4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3071LFR4-7 meets industry standards.
7.What is the process for return or replacement of DMN3071LFR4-7?
All DMN3071LFR4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3071LFR4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3071LFR4-7 part is unused and in its original packaging.
Return procedure for DMN3071LFR4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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