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Diodes Incorporated DMN30H4D0LFDE-13
- Part No.:
- DMN30H4D0LFDE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN30H4D0LFDE-13.pdf
- Description:
- MOSFET N-CH 300V 550MA 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,404
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Product details
Overview
DMN30H4D0LFDE-13 from Diodes Incorporated is a 300V N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, featuring RDS(ON) = 4 Ω @ VGS = 10V, ID = 0.55A at TA = +25°C, and low gate threshold voltage (1.7V typ), designed for compact, high-efficiency power switching in space-constrained battery-operated systems and solid-state relays.
For engineers reviewing the DMN30H4D0LFDE-13 datasheet, DMN30H4D0LFDE-13 pinout, DMN30H4D0LFDE-13 application, or DMN30H4D0LFDE-13 equivalent, this device offers verified AEC-Q101 qualification, low-profile 0.6mm height, and validated performance across -55°C to +150°C junction temperature range - critical for automotive-grade load switching and industrial control interface design.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching (tD(on) = 4.9 ns, tD(off) = 25.8 ns) and low input capacitance (Ciss = 187.3 pF). Its 300V VDSS rating supports off-line auxiliary supplies and DC-link monitoring circuits where moderate voltage blocking is required with minimal conduction loss.
The device integrates a body diode with VSD = 0.7–1.2 V at IS = 0.3A and supports bidirectional current flow in low-duty-cycle drive applications. Thermal resistance RθJA = 61°C/W (with 2oz copper thermal pad) enables operation up to 1.98W dissipation under optimized PCB layout - essential for thermally dense portable electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 300 V - Supports operation in 240V AC-derived DC rails and industrial 24/48V bus monitoring without derating. |
| RDS(ON) | 4 Ω @ VGS = 10V - Enables ≤2.2 mW conduction loss at 0.55A, suitable for low-power load switching. |
| ID (TA = 25°C) | 0.55 A - Rated continuous drain current for steady-state loads such as LED drivers or sensor biasing. |
| VGS(th) | 1.7 V (typ) - Ensures reliable turn-on with 3.3V logic-level microcontrollers without gate boosting. |
| Ciss | 187.3 pF - Minimizes gate drive energy and reduces switching losses in high-frequency PWM control. |
| PD (with thermal pad) | 1.98 W - Delivers usable power handling on standard FR-4 with 2oz copper, enabling compact heatsink-free designs. |
| TJ Range | -55°C to +150°C - Qualified per AEC-Q101, supporting automotive cabin and under-hood ambient conditions. |
Pinout & Package
Package: U-DFN2020-6 - 2.0 mm × 2.0 mm × 0.6 mm molded plastic case with NiPdAu-plated terminals; UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET die; electrically tied to exposed thermal pad for enhanced heat transfer. |
| 4 | Gate | Control terminal accepting 0–10V logic-level signals; low Ciss reduces drive power requirements. |
| 5, 6 | Drain | High-side switching node; rated for 300V blocking and pulsed currents up to 2A (10μs). |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.6 mm height enables integration into ultra-thin consumer wearables and medical patches. |
| Logic-level gate drive | VGS(th) = 1.7 V (typ) ensures full enhancement with 3.3V MCU GPIOs without level-shifting circuitry. |
| Fast switching speed | tD(off) = 25.8 ns minimizes transition time in PWM dimming and relay emulation circuits. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and lighting drivers. |
| Green RoHS-compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets EU Directive 2011/65/EU. |
Applications
| Battery-Powered IoT Sensors | Automotive Interior Lighting Control |
|---|---|
|
Use Scenario: Power gating of BLE transceivers and environmental sensors during sleep mode to extend coin-cell battery life. IC Role / Device Role / Timing Role: Low-leakage high-side switch enabling <1 µA off-state current (IDSS ≤ 1 µA at 240V). Use Value: Reduces quiescent power by >99% versus mechanical switches; supports 5+ year battery life in wireless sensor nodes. |
Use Scenario: PWM-controlled dimming of LED map lights and footwell illumination in passenger vehicles. IC Role / Device Role / Timing Role: Logic-level N-channel driver interfacing directly with 3.3V automotive microcontrollers. Use Value: Eliminates external level shifters and reduces BOM count; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime. |
| Industrial Solid-State Relays | Portable Medical Device Power Sequencing |
|
Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules for 24V DC loads. IC Role / Device Role / Timing Role: High-voltage, low-RDS(ON) switch controlling solenoids, valves, and indicator lamps. Use Value: Achieves >1 million switching cycles with no contact wear; 4Ω RDS(ON) limits self-heating to <1.2°C/W at 0.5A. |
Use Scenario: Controlled power-up sequencing of analog front-end ICs and RF transceivers in handheld ultrasound probes. IC Role / Device Role / Timing Role: Precision enable switch with tight VGS(th) distribution (1.0–2.8V) ensuring consistent turn-on timing. Use Value: Prevents supply rail contention and latch-up during cold-start; -55°C to +150°C operation supports sterilization and field use. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN30H4D0LQ-7 | Same die, but in leaded SOT-23-6 package; RθJA = 189°C/W (no thermal pad); higher profile (1.3mm). | Preferred for prototyping or low-volume manual assembly where solder-reflow compatibility is not required. | Select when board-level reflow is unavailable or thermal demands are lower than 0.63W. |
| DMN30H4D0LQ-13 | Identical electrical specs and SOT-23-6 package, but supplied in 10,000-piece reels (vs. 3,000 for -7 variant). | Optimized for high-volume production with automated pick-and-place; same thermal limitations as Q-7. | Choose for cost-sensitive, high-throughput manufacturing where U-DFN2020-6 assembly infrastructure is unavailable. |
Compared with DMN30H4D0LFDE-13, the Q-series alternatives trade 0.6mm height and 61°C/W thermal resistance for leaded package ease-of-use and legacy assembly compatibility - making them viable only when PCB space or thermal budget permits higher RθJA.
Availability
DMN30H4D0LFDE-13 is available at Aetrix Electronics and suitable for battery-operated IoT sensors, automotive interior lighting control, and industrial solid-state relays requiring stable component supply, AEC-Q101 compliance, and low-profile surface-mount packaging.
Supply support for DMN30H4D0LFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This MOSFET belongs to Diodes' "Logic-Level PowerFET" product line, engineered specifically for direct interfacing with 3.3V/5V microcontrollers in space- and thermally-constrained applications - emphasizing low VGS(th), fast switching, and AEC-Q101 validation.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN30H4D0LFDE-13 supports 0.43A continuous drain current at TA = +70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under standard FR-4 mounting with 2oz copper; actual current capability improves with enhanced PCB copper area or thermal vias.
Is the body diode suitable for reverse-current freewheeling?
Yes - the integrated body diode has VSD = 0.7–1.2V at IS = 0.3A and supports continuous forward current up to 2A. It is characterized for use in low-duty-cycle inductive load driving (e.g., solenoid control), though external Schottky diodes are recommended for high-frequency or high-current freewheeling.
Does this MOSFET require gate resistors for EMI suppression?
While not mandatory, a 10–47Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-speed switching (e.g., >100 kHz PWM). The device's low Ciss (187.3 pF) and fast tD(off) (25.8 ns) make it susceptible to oscillation without controlled gate drive impedance.
Can DMN30H4D0LFDE-13 be used in linear (analog) regulation mode?
No - this MOSFET is optimized for switching operation only. Its RDS(ON) variation with temperature (±20% over -55°C to +150°C) and lack of SOA curves for linear mode make it unsuitable for pass-element applications; dedicated LDOs or linear regulators should be used instead.
DMN30H4D0LFDE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 10V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 187.3 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 630mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN30H4D0LFDE-13 FAQ
1.How can I place an order for DMN30H4D0LFDE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN30H4D0LFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN30H4D0LFDE-13 reliable?
The price and inventory of DMN30H4D0LFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN30H4D0LFDE-13 is usually 5 days.
3.What payment methods are accepted for DMN30H4D0LFDE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN30H4D0LFDE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN30H4D0LFDE-13?
DMN30H4D0LFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN30H4D0LFDE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN30H4D0LFDE-13?
For technical support, including DMN30H4D0LFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN30H4D0LFDE-13 requirements.
6.How does Aetrix verify that DMN30H4D0LFDE-13 is sourced from the original manufacturer or authorized distributors?
All DMN30H4D0LFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN30H4D0LFDE-13 meets industry standards.
7.What is the process for return or replacement of DMN30H4D0LFDE-13?
All DMN30H4D0LFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN30H4D0LFDE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN30H4D0LFDE-13 part is unused and in its original packaging.
Return procedure for DMN30H4D0LFDE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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