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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3112S-7

Name: DMN3112S-7
Brand: Diodes Incorporated
SKU: DMN3112S-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3112S-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3112S-7.pdf

Description:: MOSFET N-CH 30V 5.8A SOT23-3

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Product details

Overview

DMN3112S-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30 V V_DSS, 5.8 A continuous drain current at 25°C, and featuring R_DS(ON) of 57 mΩ @ V_GS = 10 V and 112 mΩ @ V_GS = 4.5 V. It serves as a low-voltage power switch in load management, battery protection, and DC-DC converter synchronous rectification circuits.

For engineers reviewing the DMN3112S-7 datasheet, DMN3112S-7 pinout, DMN3112S-7 application, or DMN3112S-7 equivalent, key selection criteria include gate threshold voltage (1.3–2.2 V), thermal resistance (90 °C/W), low input capacitance (268 pF), fast switching capability, and JEDEC-qualified reliability for industrial-grade power control designs.

Technical Context

This MOSFET operates in enhancement mode with a nominal gate threshold voltage of 1.9 V, enabling direct drive from 3.3 V and 5 V logic controllers. Its low R_DS(ON) at 4.5 V gate drive supports efficient operation in space-constrained, thermally sensitive applications such as portable electronics and USB power delivery switches.

The device integrates a body diode with forward voltage of 0.78–1.1 V at 2 A, suitable for freewheeling and reverse-current blocking. Its dynamic parameters-C_iss = 268 pF, C_oss = 73 pF, C_rss = 50 pF-support high-frequency switching up to several hundred kHz in buck converters and LED drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage for 24 V rail and automotive 12 V system compatibility
R_DS(ON) @ 10 V	57 mΩ - Enables ≤330 mW conduction loss at 4.2 A, reducing thermal stress on FR-4 PCBs
R_DS(ON) @ 4.5 V	112 mΩ - Supports logic-level drive from microcontrollers without gate boosting
V_GS(TH)	1.3–2.2 V - Ensures turn-on with standard I/O voltages and provides margin against noise-induced false triggering
C_iss	268 pF - Limits gate drive power requirement and enables <100 ns turn-on with 10 Ω driver
P_D	1.4 W - Allows 5.8 A continuous operation at ambient ≤55°C on standard 1-in² FR-4 board
T_J Range	−55 to +150 °C - Qualified for extended industrial and under-hood automotive environments

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3-pin configuration, 0.008 g mass, UL 94V-0 rating, and moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Current return path for channel conduction	Internally connected to substrate; used for Kelvin sensing or low-impedance ground reference in high-side configurations
Pin 2 (Gate)	Control terminal for channel inversion	High-impedance input requiring <800 nA leakage; sensitive to ESD but compatible with standard CMOS drivers
Pin 3 (Drain)	Main current output node	Connected to load or power rail; thermally coupled to package top for heatsinking via PCB copper pour

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	112 mΩ enables direct interface with 3.3 V MCU GPIOs without level-shifting circuitry
Low gate threshold voltage	1.3–2.2 V range ensures reliable turn-on across temperature and process variation
Low input capacitance	268 pF C_iss reduces gate charge (Q_g ≈ 5.2 nC) and switching losses in high-frequency SMPS
JEDEC-qualified reliability	Qualified to AEC-Q101 stress test standards for high-reliability industrial use
Green, halogen-free construction	Meets RoHS 3 and JEDEC J-STD-020 MSL-1 requirements for lead-free reflow compatibility

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Prevents over-discharge and reverse-current flow in single-cell Li-ion packs.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as low-side protection switch with integrated body diode for charging path control.

Use Value: 112 mΩ R_DS(ON) at 4.5 V ensures <500 mW loss during 2 A discharge, minimizing pack self-heating.

Use Scenario: Controls 5 V/3 A power path between USB-C port and system bus.

IC Role / Device Role / Timing Role: Load switch enabling/disabling power with controlled slew rate and reverse-blocking capability.

Use Value: Low gate charge and fast switching (<50 ns t_on) support hot-plug sequencing without voltage droop or overshoot.

DC-DC Synchronous Rectifier

LED Driver Current Switch

Use Scenario: Replaces Schottky diode in 12 V → 3.3 V buck converter for improved efficiency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary output.

Use Value: 57 mΩ R_DS(ON) cuts conduction loss by >60% vs. 0.4 V Schottky, raising efficiency from 88% to 93% at full load.

Use Scenario: PWM-controlled current sink for high-brightness white LEDs in automotive interior lighting.

IC Role / Device Role / Timing Role: Constant-current switch modulated at 1–20 kHz to regulate luminance without flicker.

Use Value: 90 °C/W R_θJA allows 2 A pulsed operation with <15°C junction rise on 2-layer PCB, ensuring stable color point.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3110S-7	R_DS(ON) = 42 mΩ @ 10 V, 85 mΩ @ 4.5 V; slightly lower threshold (1.2–2.0 V)	Higher conduction efficiency at full drive; marginally better gate drive margin at 3.3 V	Select when lowest possible R_DS(ON) at 4.5 V is critical and layout allows same SOT23 footprint
AO3400	R_DS(ON) = 42 mΩ @ 10 V, 55 mΩ @ 4.5 V; higher Q_g (17 nC); not AEC-Q101 qualified	Lower on-resistance at 4.5 V but higher switching loss; no automotive qualification	Prefer for cost-sensitive consumer applications where JEDEC reliability is sufficient and thermal headroom exists

Compared with DMN3112S-7, DMN3110S-7 offers tighter R_DS(ON) tolerance and lower gate charge, while AO3400 trades qualification for marginally better 4.5 V performance-making DMN3112S-7 the balanced choice for industrial designs needing proven reliability and logic-level drive compatibility.

Availability

DMN3112S-7 is available at Aetrix Electronics and suitable for battery protection, USB power delivery, DC-DC synchronous rectification, and LED driver applications requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for DMN3112S-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMN3112S-7 belongs to Diodes' logic-level N-channel MOSFET product line, engineered for high-efficiency, low-voltage power switching in space-constrained industrial and portable systems.

FAQ

Is DMN3112S-7 suitable for automotive applications?

No-DMN3112S-7 is a standard-qualification part. For automotive use, Diodes offers the AEC-Q101-qualified DMN3112SQ variant, manufactured in IATF 16949-certified facilities and supported with PPAP documentation. The -7 suffix indicates tape-and-reel packaging for commercial/industrial use only.

What is the maximum safe operating temperature for continuous 5.8 A drain current?

At 5.8 A continuous ID, the junction temperature must remain ≤150°C. With R_θJA = 90 °C/W and P_D = I² × R_DS(ON) ≈ 1.9 W (using 57 mΩ), ambient must be ≤30°C on standard FR-4. Derating to 4.2 A at 70°C ambient is specified in the datasheet for reliable long-term operation.

Can DMN3112S-7 be used in high-side switching configurations?

Yes-but requires gate drive ≥ V_DS + V_GS(TH). As a single N-channel device, it needs a charge pump or bootstrap circuit to elevate gate voltage above the source. Its 20 V V_GS rating supports such topologies, and the SOT23 package allows compact high-side gate driver integration.

Does DMN3112S-7 have avalanche rating or SOA curves in the datasheet?

No-avalanche energy rating (E_AS) and Safe Operating Area (SOA) curves are not provided in DS31445 Rev. 6-3. The device is characterized for repetitive switching and DC operation only. For ruggedness-critical applications, consult Diodes' application note AN-400 or consider parts explicitly rated for unclamped inductive switching.

DMN3112S-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 57mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 268 pF @ 5 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3112S-7 FAQ

1.How can I place an order for DMN3112S-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3112S-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3112S-7 reliable?

The price and inventory of DMN3112S-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3112S-7 is usually 5 days.

3.What payment methods are accepted for DMN3112S-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3112S-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3112S-7?

DMN3112S-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3112S-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3112S-7?

For technical support, including DMN3112S-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3112S-7 requirements.

6.How does Aetrix verify that DMN3112S-7 is sourced from the original manufacturer or authorized distributors?

All DMN3112S-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3112S-7 meets industry standards.

7.What is the process for return or replacement of DMN3112S-7?

All DMN3112S-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3112S-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3112S-7 part is unused and in its original packaging.

Return procedure for DMN3112S-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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