My Inquiry
My Account
Diodes Incorporated DMN3112SSS-13
- Part No.:
- DMN3112SSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3112SSS-13.pdf
- Description:
- MOSFET N-CH 30V 6A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,843
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN3112SSS-13 from Diodes Incorporated is a single N-channel enhancement-mode MOSFET in SOP-8L package, rated for 30V VDS, 57 mΩ RDS(on) at VGS = 10 V, and 6.0 A continuous drain current at TA = +25°C. It delivers low gate threshold (1–2.2 V), fast switching, and AEC-Q101 qualification for automotive-grade reliability in DC-DC converter power stages.
For engineers reviewing the DMN3112SSS-13 datasheet, DMN3112SSS-13 pinout, DMN3112SSS-13 application, or DMN3112SSS-13 equivalent, key selection criteria include RDS(on) @ 4.5 V (112 mΩ), thermal resistance (50 °C/W), input capacitance (268 pF), and SOP-8L footprint compatibility with space-constrained power management layouts.
Technical Context
This MOSFET operates as a synchronous rectifier or high-side/low-side switch in buck and boost converters, leveraging its low 1.0–2.2 V gate threshold to ensure robust turn-on with 3.3 V or 5 V logic-level drive. Its 268 pF input capacitance and 50 pF reverse transfer capacitance support clean gate drive and reduced Miller-induced shoot-through risk.
The device integrates an intrinsic body diode with 0.5–1.2 V forward voltage at 2.1 A, enabling freewheeling operation without external diodes in non-synchronous topologies. Thermal design is anchored to its 50 °C/W junction-to-ambient rating on standard 2 oz copper pad layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V - Supports 24 V nominal input rails with 25% margin for transients |
| RDS(on) @ 10 V | 57 mΩ - Enables ≤0.33 W conduction loss at 6 A continuous load |
| RDS(on) @ 4.5 V | 112 mΩ - Ensures functional switching with 3.3 V microcontroller GPIOs |
| ID Continuous | 6.0 A @ TA = +25°C - Sustains typical mid-power DC-DC output stages |
| Ciss | 268 pF - Matches standard gate drivers with ≤1 Ω source impedance |
| RθJA | 50 °C/W - Requires ≥25 mm² 2 oz copper pour for full 2.5 W power dissipation |
| VGS(th) | 1.0–2.2 V - Guarantees turn-on with logic-level control signals |
Pinout & Package
SOP-8L (Small Outline Package, 8-lead, exposed drain pad) with gull-wing leads, 1.27 mm pitch, and thermally enhanced construction featuring an internal drain-connected copper slug for improved heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; tied internally to exposed pad for low-inductance return path |
| 5, 6, 7, 8 | Drain (D) | Power output node; connected to exposed pad for thermal and current handling |
| 3 (center) | Gate (G) | Control input; isolated by oxide layer; requires <2.2 V to fully enhance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) @ 4.5 V | 112 mΩ enables use with 3.3 V controllers without level-shifting circuitry |
| AEC-Q101 Qualified | Validated for automotive temperature range (−55°C to +150°C) and vibration stress |
| Lead-Free & Halogen-Free | Meets RoHS 2 and JEDEC J-STD-020D Level 1 moisture sensitivity requirements |
| Low Ciss/Crss Ratio | 268 pF / 50 pF = 5.4 - Reduces gate drive energy and improves EMI performance |
| Body Diode VSD | 0.5–1.2 V at 2.1 A - Supports non-synchronous operation with predictable recovery |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving parallel LED strings in automotive instrument clusters with PWM dimming up to 20 kHz. IC Role / Device Role: Low-side switching element controlling current flow through LED cathodes. Use Value: 112 mΩ RDS(on) at 4.5 V ensures minimal voltage drop and thermal rise during 3.5 A peak pulses. | Use Scenario: Enabling/disabling 20 V / 3 A power path in portable USB-C PD sink adapters. IC Role / Device Role: High-efficiency power switch placed between input connector and DC-DC controller. Use Value: 30 V rating and 57 mΩ RDS(on) at 10 V minimize insertion loss and self-heating under full load. |
| Automotive Body Control Module | Industrial 24 V DC-DC Converter |
Use Scenario: Controlling solenoid valves and small motors in BCM sub-units operating across −40°C to +125°C ambient. IC Role / Device Role: Logic-level driven load switch with integrated protection against inductive kickback. Use Value: AEC-Q101 qualification and 150°C max junction temperature ensure field reliability in engine bay proximity. | Use Scenario: Synchronous rectification in 24 V input, 5 V/10 A isolated flyback secondary side. IC Role / Device Role: Secondary-side MOSFET replacing Schottky diode to improve efficiency above 85%. Use Value: 268 pF Ciss and fast switching enable >500 kHz operation with low gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(on) (25 mΩ @ 10 V), same SOP-8L, higher Ciss (490 pF) | Better conduction loss but demands stronger gate driver for 500 kHz+ switching | Prefer when thermal budget is tight and gate drive capability supports higher Ciss |
| SI2302DS-T1-GE3 | Higher RDS(on) (90 mΩ @ 4.5 V), SOT-23 package, lower ID (2.6 A) | Limited to sub-2 A loads; unsuitable for 6 A DC-DC primary switches | Select only for space-constrained, low-current bias or signal-switching roles |
Compared with DMN3112SSS-13, DMN3025LSD-13 offers superior conduction efficiency but increases gate drive demand, while SI2302DS-T1-GE3 sacrifices current capacity and thermal headroom for footprint reduction-neither is pin-compatible, requiring layout revision.
Availability
DMN3112SSS-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and automotive body control modules requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN3112SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN3112SSS belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, medium-current switching in 12 V/24 V vehicle subsystems and industrial power supplies.
FAQ
Is DMN3112SSS-13 suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage range of 1.0–2.2 V and guaranteed RDS(on) of 112 mΩ at VGS = 4.5 V, it fully enhances using standard 3.3 V microcontroller outputs. Gate charge is 7.5 nC, compatible with most GPIOs driving ≤100 pF load.
What is the maximum continuous power dissipation for DMN3112SSS-13 on a standard PCB?
At TA = +25°C with a 2 oz copper pad layout, the device supports 2.5 W continuous power dissipation, corresponding to RθJA = 50 °C/W. Derating is required above +25°C ambient; at +70°C, max power drops to ~1.25 W.
Does DMN3112SSS-13 include an integrated ESD protection diode?
No. The device does not integrate dedicated ESD protection structures. Its gate oxide withstands ±20 V VGS, but external TVS or RC snubbers are recommended for board-level ESD immunity per IEC 61000-4-2 Level 4 (±15 kV air).
Can DMN3112SSS-13 be used in synchronous rectification for isolated DC-DC converters?
Yes. Its low RDS(on), fast switching (ton/toff < 20 ns typical), and body diode recovery characteristics make it suitable for secondary-side synchronous rectification in flyback and forward converters up to 500 kHz, provided gate timing avoids cross-conduction.
DMN3112SSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 268 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMN3112SSS-13 FAQ
1.How can I place an order for DMN3112SSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3112SSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3112SSS-13 reliable?
The price and inventory of DMN3112SSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3112SSS-13 is usually 5 days.
3.What payment methods are accepted for DMN3112SSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3112SSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3112SSS-13?
DMN3112SSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3112SSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3112SSS-13?
For technical support, including DMN3112SSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3112SSS-13 requirements.
6.How does Aetrix verify that DMN3112SSS-13 is sourced from the original manufacturer or authorized distributors?
All DMN3112SSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3112SSS-13 meets industry standards.
7.What is the process for return or replacement of DMN3112SSS-13?
All DMN3112SSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3112SSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3112SSS-13 part is unused and in its original packaging.
Return procedure for DMN3112SSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3112SSS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
