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Diodes Incorporated DMN3135LVT-7
- Part No.:
- DMN3135LVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3135LVT-7.pdf
- Description:
- MOSFET 2N-CH 30V 3.5A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:45,187
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Product details
Overview
DMN3135LVT-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V V(BR)DSS, 60mΩ RDS(on) at VGS = 10V/3.1A, and 100mΩ at VGS = 4.5V/2A. It delivers low on-resistance and fast switching for high-efficiency DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMN3135LVT-7 datasheet, DMN3135LVT-7 pinout, DMN3135LVT-7 application, or DMN3135LVT-7 equivalent, key selection criteria include its dual-channel layout, AEC-Q101 qualification, 155°C/W RθJA (steady-state), 4.1nC Qg at 4.5V, and TSOT26 thermal performance in space-constrained power management designs.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single TSOT26 package with independent source terminals (S1/S2) and shared gate drive capability. Its low RDS(on) and 305pF Ciss enable efficient synchronous rectification and load switching in compact 5–12V input converters.
The device operates across –55°C to +150°C junction temperature, supports ±20V gate drive, and features 1.3–2.2V VGS(th) with tight distribution-enabling robust turn-on control in battery-powered systems where gate voltage headroom is limited to 4.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - Maximum drain-source blocking voltage before avalanche conduction begins; defines safe operating range in 24V rail applications. |
| RDS(on) | 60mΩ @ VGS = 10V/3.1A - Enables <186mW conduction loss at 3.1A, critical for thermally constrained portable DC-DC stages. |
| RDS(on) | 100mΩ @ VGS = 4.5V/2A - Supports logic-level gate drive from 3.3V/5V microcontrollers without level-shifting circuitry. |
| Qg | 4.1nC @ VGS = 4.5V - Low gate charge reduces driver power consumption and enables >1MHz switching in high-frequency buck regulators. |
| Ciss | 305pF @ VDS = 15V - Minimizes Miller effect-induced switching delay and improves EMI profile in hard-switched topologies. |
| PD | 0.84W @ TA = 25°C (FR-4, 2oz Cu) - Sets practical continuous current limit to ~2.8A in standard PCB layouts without heatsinking. |
| TJ Range | –55°C to +150°C - Qualified for automotive cabin and industrial ambient environments per AEC-Q101 stress testing. |
Pinout & Package
Package: TSOT26 - ultra-thin, surface-mount, 6-pin leadless package with exposed thermal pad (not electrically connected), 1.0mm height, 2.9 × 2.8mm footprint, UL 94V-0 molded compound, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first N-MOSFET; requires external gate resistor for dV/dt control during switching. |
| D1 | Drain of Channel 1 | High-side or low-side switching node; connects to input rail or output inverter leg depending on topology. |
| S1 | Source of Channel 1 | Return path for Channel 1; electrically isolated from S2-enables floating half-bridge or dual independent switches. |
| G2 | Gate of Channel 2 | Independent control input for second N-MOSFET; allows asynchronous or synchronized dual-phase operation. |
| D2 | Drain of Channel 2 | Second switching node; used for complementary output stage or redundant load path in fault-tolerant designs. |
| S2 | Source of Channel 2 | Return path for Channel 2; separate from S1-eliminates cross-conduction risk when driving different loads. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5V | 100mΩ enables direct drive from 5V microcontrollers in USB-powered LED drivers and PMICs. |
| Fast switching speed | Turn-on delay 2.6ns + rise time 4.6ns supports >2MHz PWM in compact buck converters. |
| AEC-Q101 qualified | Validated for automotive power modules including infotainment and body electronics subsystems. |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IEC 61249-2-21. |
| Low leakage | IDSS ≤ 1.0µA at 24V ensures minimal standby power loss in always-on battery backup circuits. |
Applications
| LED Backlighting | DC-DC Buck Converter |
|---|---|
Use Scenario: Driving parallel white LED strings in automotive instrument clusters with 12V input and 30–40V forward voltage. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling PWM dimming and current regulation paths independently. Use Value: 100mΩ RDS(on) at 4.5V gate drive enables direct MCU control without external level shifters, reducing BOM count by one IC. | Use Scenario: High-density 5V-to-3.3V point-of-load converter in network router line cards with strict thermal limits. IC Role / Device Role / Timing Role: Synchronous rectifier pair replacing Schottky diodes in continuous conduction mode (CCM) buck stage. Use Value: 60mΩ RDS(on) cuts conduction loss by 65% vs. 150mΩ discrete MOSFETs, lowering junction temperature by 18°C at 3A load. |
| Load Switching | Power Management Unit |
Use Scenario: Dual-rail power sequencing for FPGA core and I/O banks in industrial PLC controllers. IC Role / Device Role / Timing Role: Independent channel control enabling staggered power-up with programmable delay between rails. Use Value: Electrically isolated sources (S1/S2) prevent ground loop coupling and allow flexible rail assignment without isolation components. | Use Scenario: Dual-output power management IC replacement in medical handheld devices requiring low quiescent current and small footprint. IC Role / Device Role / Timing Role: Discrete dual-FET building block for custom LDO bypass and battery charge path switching. Use Value: TSOT26 package occupies 8.12mm²-42% smaller than SO-8 dual MOSFETs-freeing PCB area for RF shielding or sensor integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LVT-7 | Lower RDS(on): 40mΩ @ 10V, but higher Qg (6.5nC); same TSOT26 package and pinout. | Better conduction efficiency above 3A, but increased gate drive loss limits optimal use to <1MHz switching. | Select when thermal margin is tight and gate drive strength supports higher Qg; avoid in 2MHz+ converters. |
| SI6926ADQ-T1-GE3 | Higher V(BR)DSS: 40V; RDS(on) 75mΩ @ 4.5V; different pinout (G1/D1/S1/G2/D2/S2 → G1/S1/D1/G2/S2/D2). | Supports wider input range (e.g., 36V industrial rails), but requires PCB layout revision due to swapped drain/source pins. | Choose for 24–40V systems needing extended voltage margin; re-layout required for pin compatibility. |
Compared with DMN3135LVT-7, DMN3025LVT-7 trades gate charge for lower conduction loss, while SI6926ADQ-T1-GE3 extends voltage rating at the cost of pinout redesign-making DMN3135LVT-7 optimal for cost-sensitive 12–24V applications demanding proven AEC-Q101 reliability and drop-in layout reuse.
Availability
DMN3135LVT-7 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC buck converters, and dual-rail load switching requiring stable component supply, automotive-grade qualification, and TSOT26 footprint consistency.
Supply support for DMN3135LVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The DMN3135LVT-7 belongs to Diodes' "Logic-Level Dual MOSFET" product line, engineered specifically for space-constrained, high-efficiency power conversion in automotive and industrial applications where gate drive voltage is limited to 4.5V.
FAQ
Is DMN3135LVT-7 suitable for automotive under-hood applications?
Yes. It is AEC-Q101 qualified and rated for TJ = –55°C to +150°C. Its 30V V(BR)DSS and 100mΩ RDS(on) at 4.5V make it appropriate for 12V battery-supplied engine control modules and lighting drivers, provided board-level thermal design maintains junction temperature within spec under peak load.
What is the maximum continuous drain current at 70°C ambient?
At TA = 70°C with FR-4 PCB (2oz Cu, minimum pad layout), the steady-state ID is 2.7A at VGS = 10V and 2.1A at VGS = 4.5V. These values derive directly from the derating curves in the datasheet's "Maximum Ratings" table and assume no forced airflow or heatsinking.
Does DMN3135LVT-7 have integrated ESD protection on its gate terminals?
No. The datasheet does not specify on-chip ESD protection structures. External gate resistors (≥10Ω) and TVS diodes are recommended for systems exposed to IEC 61000-4-2 contact discharge, especially in handheld or automotive environments where human interaction or cable coupling may induce transients.
Can both channels be paralleled to increase current handling?
No. The channels share no internal thermal or electrical coupling that guarantees current sharing. Paralleling would cause unequal current division due to VGS(th) mismatch (1.3–2.2V) and RDS(on) variation, risking thermal runaway in one channel. Use a single-channel part rated for higher current instead.
DMN3135LVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 305pF @ 15V
- Power - Max:
- 840mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3135LVT-7 FAQ
1.How can I place an order for DMN3135LVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3135LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3135LVT-7 reliable?
The price and inventory of DMN3135LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3135LVT-7 is usually 5 days.
3.What payment methods are accepted for DMN3135LVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3135LVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3135LVT-7?
DMN3135LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3135LVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3135LVT-7?
For technical support, including DMN3135LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3135LVT-7 requirements.
6.How does Aetrix verify that DMN3135LVT-7 is sourced from the original manufacturer or authorized distributors?
All DMN3135LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3135LVT-7 meets industry standards.
7.What is the process for return or replacement of DMN3135LVT-7?
All DMN3135LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3135LVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3135LVT-7 part is unused and in its original packaging.
Return procedure for DMN3135LVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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