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Diodes Incorporated DMN3135LVTQ-7
- Part No.:
- DMN3135LVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3135LVTQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 3.5A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:8,532
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Product details
Overview
DMN3135LVTQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 30V drain-source voltage, with RDS(ON) of 60 mΩ at VGS = 10 V and 100 mΩ at VGS = 4.5 V, delivering 3.5 A continuous drain current at 25°C. It is AEC-Q101 qualified and designed for automotive backlighting, DC-DC converters, and power-management functions.
For engineers reviewing the DMN3135LVTQ datasheet, DMN3135LVTQ pinout, DMN3135LVTQ application, or DMN3135LVTQ equivalent, key selection criteria include its TSOT26 dual-die package, low gate charge (9.0 nC at VGS = 10 V), fast switching (tD(OFF) = 13.1 ns), AEC-Q101 qualification, and thermal resistance (RθJA = 102 °C/W on 1-inch² copper).
Technical Context
This dual N-channel MOSFET integrates two independent enhancement-mode silicon devices in a single TSOT26 package, sharing no internal connection between channels. Each channel features a gate threshold voltage of 1.3–2.2 V and supports logic-level drive down to 4.5 V.
Its dynamic characteristics include Ciss = 305 pF, Coss = 40 pF, and Crss = 40 pF at VDS = 15 V, enabling efficient high-frequency switching in synchronous buck topologies and LED driver circuits where low Qg and fast tr/tf reduce conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage per channel; suitable for 12 V automotive rail and 24 V industrial supply interfaces. |
| RDS(ON) @ VGS = 10 V | 60 mΩ - Enables ≤210 mW conduction loss at 3.1 A; supports thermally constrained PCB layouts. |
| RDS(ON) @ VGS = 4.5 V | 100 mΩ - Ensures reliable turn-on with standard 5 V logic or microcontroller GPIO without level-shifting. |
| Qg @ VGS = 10 V | 9.0 nC - Reduces gate-drive power and enables >1 MHz switching in compact DC-DC regulators. |
| tD(OFF) | 13.1 ns - Limits dead-time requirements in half-bridge configurations and improves efficiency in synchronous rectification. |
| RθJA (1″² Cu) | 102 °C/W - Allows 0.84 W steady-state dissipation at +70°C ambient with minimal heatsinking. |
| AEC-Q101 Qualified | Yes - Validated for automotive temperature range (−55°C to +150°C) and PPAP-capable manufacturing under IATF 16949. |
Pinout & Package
Package: TSOT26 - 6-pin, surface-mount, lead-free, halogen-free molded plastic package (UL 94V-0), 2.9 mm × 2.8 mm × 1.0 mm profile, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to load or input rail. |
| S1 | Source of Channel 1 | Reference node for Channel 1; ties to ground or return path; used with G1 to define VGS1. |
| G1 | Gate of Channel 1 | Control terminal for Channel 1; requires <2.2 V threshold; driven by dedicated logic or PWM controller. |
| D2 | Drain of Channel 2 | Independent switch node; no internal connection to D1; supports dual-path or redundant power routing. |
| S2 | Source of Channel 2 | Reference node for Channel 2; separate from S1; enables floating or independently referenced operation. |
| G2 | Gate of Channel 2 | Independent control input; identical threshold and drive requirements as G1; supports asynchronous or synchronized switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 100 mΩ ensures full enhancement with 5 V microcontrollers and eliminates need for gate drivers in space-constrained modules. |
| Low Ciss and Crss | 305 pF input capacitance and 40 pF reverse transfer capacitance minimize Miller effect and improve noise immunity in high-dv/dt environments. |
| Fast switching speed | 13.1 ns turn-off delay and 2.5 ns fall time enable stable operation above 500 kHz in automotive DC-DC converters. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD (HBM ≥2 kV), with full PPAP documentation support. |
| Green packaging | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb); compliant with RoHS 3 and IATF 16949 manufacturing. |
Applications
| Automotive LCD Backlighting | 12 V Automotive DC-DC Converter |
|---|---|
|
Use Scenario: Driving parallel strings of white LEDs in instrument cluster or infotainment display backlight systems. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling LED current paths; each channel independently modulated via PWM. Use Value: 100 mΩ RDS(ON) at 4.5 V allows direct MCU PWM control; low Qg minimizes switching loss during 200–500 Hz dimming. |
Use Scenario: Synchronous rectification stage in 12 V to 5 V/3.3 V buck converter for ADAS camera or telematics module. IC Role / Device Role / Timing Role: Low-side FET in synchronous buck topology; paired with external high-side switch or integrated controller. Use Value: 13.1 ns tD(OFF) and 2.5 ns tF reduce shoot-through risk and support >1 MHz operation with tight dead-time control. |
| Automotive Power Management Unit (PMU) | Redundant Load Switch for Safety-Critical Sensors |
|
Use Scenario: Independent channel control of multiple sub-system rails (e.g., radar SoC core, I/O, and interface supplies) within a centralized PMU. IC Role / Device Role / Timing Role: Dual discrete load switch providing overcurrent protection and sequencing capability per rail. Use Value: Separate S1/S2 terminals allow independent grounding and current sensing; AEC-Q101 rating ensures functional safety compliance up to ASIL-B. |
Use Scenario: Dual-path power delivery to critical sensors (e.g., airbag accelerometers or brake pressure transducers) requiring fault-isolated redundancy. IC Role / Device Role / Timing Role: Two independent N-channel switches enabling active failover and diagnostic monitoring of each path. Use Value: Electrically isolated channels prevent single-point failure propagation; low leakage (<1 µA IDSS) maintains standby integrity over 15-year vehicle life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3061SVTQ | Lower RDS(ON) (40 mΩ @ 10 V), higher ID (4.5 A), same TSOT26 package and AEC-Q101 qualification. | Direct replacement with improved conduction efficiency; recommended for new designs per Diodes' notice. | Select when upgrading thermal margin or reducing conduction loss in high-current (>3 A) automotive rails. |
| DMN3025LVTQ | Higher RDS(ON) (120 mΩ @ 4.5 V), lower Qg (5.5 nC), same voltage rating and package. | Better suited for ultra-low-power wake-up circuits or always-on sensor biasing where gate drive energy is critical. | Prefer when minimizing gate-drive power dominates over RDS(ON) in battery-backed subsystems. |
Compared with DMN3135LVTQ, DMN3061SVTQ delivers 33% lower conduction loss at 10 V drive and extends safe operating area, while DMN3025LVTQ trades higher on-resistance for reduced gate charge-making it optimal for low-duty-cycle, low-IQ applications rather than continuous power switching.
Availability
DMN3135LVTQ is available at Aetrix Electronics and suitable for automotive backlighting, 12 V DC-DC conversion, and power-management functions requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3135LVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN3135LVTQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power switching in harsh-environment vehicle systems including body electronics, lighting, and ADAS subsystems.
FAQ
Is DMN3135LVTQ pin-compatible with DMN3061SVTQ?
Yes, both devices use the TSOT26 package with identical pinout (D1/S1/G1/D2/S2/G2). The DMN3061SVTQ is explicitly designated by Diodes as the recommended replacement, maintaining mechanical and electrical compatibility while improving RDS(ON) and current rating.
What is the maximum junction temperature for continuous operation?
The DMN3135LVTQ has a specified operating junction temperature range of −55°C to +150°C. For continuous DC operation at 3.5 A, thermal design must ensure TJ remains ≤150°C using the RθJA = 102 °C/W value (with 1-inch² copper) and ambient temperature constraints.
Does this device include integrated ESD protection?
Yes, the DMN3135LVTQ is rated for HBM ESD ≥2 kV per AEC-Q101 stress test requirements. Its gate oxide structure and layout incorporate robust protection against handling and system-level transients without requiring external TVS diodes in typical automotive board environments.
Can both channels be paralleled to increase current capacity?
No-channels are electrically isolated but not matched for current sharing. Diodes does not characterize or guarantee balanced conduction between D1/S1/G1 and D2/S2/G2. Paralleling is not recommended; use a single-channel part rated for higher current instead.
DMN3135LVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 305pF @ 15V
- Power - Max:
- 840mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3135LVTQ-7 FAQ
1.How can I place an order for DMN3135LVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3135LVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3135LVTQ-7 reliable?
The price and inventory of DMN3135LVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3135LVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN3135LVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3135LVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3135LVTQ-7?
DMN3135LVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3135LVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3135LVTQ-7?
For technical support, including DMN3135LVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3135LVTQ-7 requirements.
6.How does Aetrix verify that DMN3135LVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN3135LVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3135LVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN3135LVTQ-7?
All DMN3135LVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3135LVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3135LVTQ-7 part is unused and in its original packaging.
Return procedure for DMN3135LVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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