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Diodes Incorporated DMN3190LDW-13
- Part No.:
- DMN3190LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN3190LDW-13.pdf
- Description:
- MOSFET 2N-CH 30V 1A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:11,866
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Product details
Overview
DMN3190LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 190mΩ RDS(ON) at VGS = 10V and 335mΩ at 4.5V, with 1A continuous drain current (TA = +25°C). It serves as a compact, low-RDS(ON) load switch or motor drive stage in space-constrained power management circuits.
For engineers reviewing the DMN3190LDW-13 datasheet, DMN3190LDW-13 pinout, DMN3190LDW-13 application, or DMN3190LDW-13 equivalent, key selection criteria include gate threshold voltage (1.5–2.8V), input capacitance (87pF), fast switching times (tD(ON) = 4.5ns), ESD-protected gate, and dual-channel thermal coupling in a single 6-pin SOT363 footprint.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration (S1/S2 tied internally or externally per layout), enabling half-bridge or independent load switching. Its low 122mΩ typical RDS(ON) at 10V and 181mΩ at 4.5V supports efficient operation from 3.3V and 5V logic-level gate drives.
The device features integrated gate protection diodes, 1.2V body diode forward voltage at 250mA, and robust thermal performance (RθJA = 320°C/W on 1"×1" 2oz copper), making it suitable for thermally demanding DC-DC point-of-load and battery-powered motor control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 3.3V/5V system rail switching |
| RDS(ON) @ 10V | 190mΩ max - Enables ≤190mW conduction loss at 1A, critical for thermal budget in SOT363 |
| RDS(ON) @ 4.5V | 335mΩ max - Ensures reliable turn-on from standard 3.3V GPIO without level-shifting |
| ID (continuous) | 1A @ TA = +25°C - Supports moderate-power loads like small fans, LED arrays, or sensor biasing |
| Ciss | 87pF - Low input capacitance reduces gate drive power and speeds up switching transitions |
| Qg @ 10V | 2.0nC - Enables fast, low-energy gate charging with standard microcontroller drivers |
| TJ range | −55°C to +150°C - Qualified for industrial and extended-temperature embedded applications |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, lead-free, green molded plastic case (UL 94V-0), 0.006g weight, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Q1 | Independent control input for first N-channel MOSFET; requires <2.8V VGS(th) turn-on |
| 2 (D1) | Drain of Q1 | High-side or low-side switching node; rated for 30V, 1A pulsed (9.6A) |
| 3 (S1) | Source of Q1 | Reference node for Q1; may be tied to S2 for common-source configuration |
| 4 (S2) | Source of Q2 | Reference node for Q2; electrically isolated from S1 unless externally connected |
| 5 (D2) | Drain of Q2 | Second independent switching node; matched RDS(ON) and dynamic characteristics to Q1 |
| 6 (G2) | Gate of Q2 | Independent control input for second N-channel MOSFET; ESD-protected, ±20V rating |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 335mΩ max enables direct interfacing with 3.3V microcontrollers without gate drivers |
| ESD-protected gate | Integrated protection allows handling in standard assembly environments without special precautions |
| Low Ciss and Qg | 87pF / 2.0nC minimizes switching losses and simplifies gate drive design |
| Thermally enhanced layout | 320°C/W RθJA on 1"×1" 2oz copper supports sustained 1A operation in compact PCBs |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets global environmental standards |
Applications
| Motor Control | Power Management Functions |
|---|---|
Use Scenario: Driving small brushed DC motors (e.g., cooling fans, actuator modules) in portable medical devices and IoT edge nodes. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling direction and enable via independent G1/G2 inputs. Use Value: Matched RDS(ON) ensures balanced current sharing; 1.2V body diode supports freewheeling during PWM decay. | Use Scenario: Sequenced power-up/down of multiple subsystems (e.g., sensor array, RF transceiver, MCU core) in battery-powered wearables. IC Role / Device Role / Timing Role: Independent load switch for each rail, controlled by system PMIC or GPIO. Use Value: Low 335mΩ RDS(ON) at 4.5V eliminates need for external level shifters; fast tF = 15.6ns limits shoot-through risk. |
| Load Switch | Industrial Sensor Interface |
Use Scenario: Hot-swap protection and inrush limiting for USB-C peripheral ports and modular I/O expansion boards. IC Role / Device Role / Timing Role: Dual high-side or low-side switch managing power delivery and fault isolation per port. Use Value: 9.6A pulsed current rating handles capacitor charging surges; ESD protection guards against connector insertion events. | Use Scenario: Biasing and signal conditioning for analog sensors (e.g., pressure, temperature) in factory automation PLC modules. IC Role / Device Role / Timing Role: Precision current source/sink switch enabling ratiometric excitation and calibration sequencing. Use Value: Tight RDS(ON) matching between channels ensures consistent sensor excitation; −55°C to +150°C rating supports harsh ambient operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Lower RDS(ON) (29mΩ @ 10V), higher ID (3.8A), larger SOT23-6 package | Better for higher-current loads but requires more PCB area and higher gate drive capability | Select when >1A continuous current or lower conduction loss is required; not drop-in due to different pinout and thermal profile |
| SI2302DS-T1-GE3 | Single N-channel, 20V VDSS, 80mΩ @ 4.5V, SOT23-3 package | Lacks dual-channel integration; requires two devices for same functionality | Choose only if board space permits duplication and 30V rating is unnecessary; no internal thermal coupling benefit |
Compared with DMN3029LSD-13 and SI2302DS-T1-GE3, the DMN3190LDW-13 uniquely balances dual-channel integration, 30V rating, 3.3V logic compatibility, and minimal SOT363 footprint-making it optimal for space-limited, multi-rail power sequencing where thermal coupling and layout simplicity matter.
Availability
DMN3190LDW-13 is available at Aetrix Electronics and suitable for motor control, power management functions, load switching, and industrial sensor interface applications requiring stable component supply across production lifecycles.
Supply support for DMN3190LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and ICs, specializing in high-performance, energy-efficient components for power management, signal integrity, and protection.
The DMN3190LDW belongs to Diodes' logic-level dual MOSFET product line, engineered for compact, thermally efficient load switching in battery-powered and space-constrained industrial systems.
FAQ
What is the maximum safe operating junction temperature for DMN3190LDW-13?
The absolute maximum junction temperature is +150°C, and the device is characterized across −55°C to +150°C. Derating begins above +25°C ambient: continuous ID drops to 900mA at +70°C ambient, and thermal resistance is 320°C/W on a 1"×1" 2oz copper PCB. Operation beyond 150°C risks permanent parametric shift or failure.
Can DMN3190LDW-13 be used in a half-bridge configuration?
No-DMN3190LDW-13 contains two independent N-channel MOSFETs with separate gates and drains; it lacks an integrated high-side driver or bootstrap circuitry. For half-bridge use, external gate driving and level-shifting are required, and the S1/S2 pins must remain isolated unless configured as a common-source pair for parallel operation.
Is the body diode in DMN3190LDW-13 suitable for reverse recovery in flyback or boost topologies?
The intrinsic body diode has VSD = 1.2V at 250mA and is not optimized for fast reverse recovery. It supports basic freewheeling in low-frequency PWM motor control but is unsuitable for high-frequency (>100kHz) switching converters where reverse recovery charge (Qrr) and softness matter-external Schottky diodes are recommended for such applications.
Does DMN3190LDW-13 meet AEC-Q101 for automotive use?
No-the datasheet explicitly states that automotive-qualified versions require AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing; DMN3190LDW-13 is not listed as AEC-Q101 qualified. It is rated for industrial temperature range (−55°C to +150°C) but lacks automotive change control documentation and stress test validation.
DMN3190LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1A
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 87pF @ 20V
- Power - Max:
- 320mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN3190LDW-13 FAQ
1.How can I place an order for DMN3190LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3190LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3190LDW-13 reliable?
The price and inventory of DMN3190LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3190LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN3190LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3190LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3190LDW-13?
DMN3190LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3190LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3190LDW-13?
For technical support, including DMN3190LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3190LDW-13 requirements.
6.How does Aetrix verify that DMN3190LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN3190LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3190LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN3190LDW-13?
All DMN3190LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3190LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3190LDW-13 part is unused and in its original packaging.
Return procedure for DMN3190LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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