Diodes Incorporated DMN3190LDW-7

Overview

DMN3190LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V V_DSS, 190mΩ R_DS(ON) at V_GS = 10V and 335mΩ at V_GS = 4.5V, with 1A continuous drain current (T_A = +25°C). It integrates ESD-protected gates and low input capacitance (C_iss = 87pF), enabling efficient load switching in space-constrained power management circuits.

For engineers reviewing the DMN3190LDW-7 datasheet, DMN3190LDW-7 pinout, DMN3190LDW-7 application, or DMN3190LDW-7 equivalent, this device supports high-efficiency DC-DC load switching, motor control gate drive, and battery-powered system power sequencing where low gate charge (Q_g = 2.0nC @ 10V) and fast switching (t_r = 8.9ns) are critical.

Technical Context

This dual MOSFET integrates two independent N-channel channels in a single SOT363 package, sharing no internal connection between drains or sources - each channel operates as a discrete switch. Its gate threshold voltage (V_GS(TH) = 1.5–2.8V) enables reliable turn-on from 3.3V and 5V logic, while its low R_DS(ON) at 4.5V supports USB PD and portable battery load switching.

The device features integrated gate protection diodes and is qualified to J-STD-020 moisture sensitivity Level 1. Thermal resistance R_θJA is 320°C/W on 1"×1" 2oz copper PCB, supporting sustained 0.75A operation at ambient up to +70°C without forced cooling.

Key Specifications

Pinout & Package

SOT363 (6-pin, 1.3mm × 2.1mm × 0.95mm) surface-mount package with exposed thermal pad not connected internally; terminals are matte tin annealed over Alloy 42 leadframe, solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3190LDW-7, DMN3025LSD-13 delivers superior efficiency at high current but sacrifices compactness and gate drive efficiency; SI2302DS-T1-GE3 offers lower R_DS(ON) in a smaller single-channel form but eliminates dual-switch integration entirely.

Availability

DMN3190LDW-7 is available at Aetrix Electronics and suitable for USB-C power delivery load switching, brushed DC motor control, IoT sensor node power sequencing, and industrial PLC digital output modules requiring stable component supply across production lifecycles.

Supply support for DMN3190LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable, industrial, and automotive-adjacent applications where space, thermal headroom, and logic-level compatibility are critical.

FAQ

Is DMN3190LDW-7 suitable for 3.3V GPIO direct drive?

Yes. With V_GS(TH) ranging from 1.5V to 2.8V and R_DS(ON) = 335mΩ max at V_GS = 4.5V, it reliably turns on from 3.3V logic. Measured R_DS(ON) at 3.3V is ~480mΩ (typical), supporting ≤300mA continuous loads without thermal derating on standard PCBs.

Does DMN3190LDW-7 include body diodes, and are they usable in reverse-current protection?

Yes - each channel has an intrinsic body diode (V_SD = 1.2V max at 250mA). These diodes support freewheeling in inductive loads (e.g., motors) but are not rated for continuous reverse conduction; use external Schottky diodes for active reverse-current blocking in USB-C or battery-isolation applications.

What is the maximum safe operating area (SOA) for pulsed operation?

Per Figure 11, at T_C = 25°C and V_GS = 10V, the device supports 9.6A for 10µs pulses (1% duty cycle). At 100µs pulse width, max current drops to ~3.2A; at 1ms, to ~1.1A. Derating is required above 25°C case temperature per R_θJC = 143°C/W.

Can S1 and S2 be connected together to create a pseudo-single-channel 2A switch?

No. S1 and S2 are physically separate terminals with no internal connection; paralleling them requires matched V_GS(TH) and thermal coupling to avoid current imbalance. The datasheet does not characterize or guarantee balanced sharing - use a single-channel part rated for 2A instead.