Diodes Incorporated DMN3190LDWQ-13
- Part No.:
- DMN3190LDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN3190LDWQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 1A SOT363
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMN3190LDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 190mΩ RDS(ON) at VGS = 10V and 1A ID, qualified to AEC-Q101 for automotive use in motor control and DC-DC converters.
For engineers reviewing the DMN3190LDWQ-13 datasheet, DMN3190LDWQ-13 pinout, DMN3190LDWQ-13 application, or DMN3190LDWQ-13 equivalent, key selection criteria include dual-channel low-RDS(ON) performance at 4.5V gate drive, AEC-Q101 qualification, thermal resistance (RθJA = 320°C/W), and SOT363 footprint compatibility with space-constrained automotive modules.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SOT363 package, each featuring independent gate terminals and shared source connections per channel (S1/G1/D1 and S2/G2/D2). Its design supports synchronous rectification and half-bridge configurations with fast switching (tR = 8.9ns, tF = 15.6ns) and low input capacitance (Ciss = 87pF).
The device operates across –55°C to +150°C junction temperature range, with gate threshold voltage VGS(TH) tightly specified (1.5–2.8V) and on-resistance stable over temperature (±20% variation up to 125°C). ESD protection on both gates (HBM >2kV) enables robust handling in automated assembly lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V automotive rail applications |
| RDS(ON) @ VGS = 10V | 190mΩ - Enables <190mW conduction loss at 1A continuous current |
| RDS(ON) @ VGS = 4.5V | 335mΩ - Supports logic-level drive from 3.3V/5V microcontrollers in load switch designs |
| ID (max, TA = 25°C) | 1A - Continuous current rating under standard PCB mounting (1"×1", 2oz Cu) |
| Ciss | 87pF - Low input capacitance reduces gate drive power and improves switching efficiency |
| tR/tF | 8.9ns / 15.6ns - Fast edge rates enable high-frequency PWM operation up to 500kHz |
| RθJA | 320°C/W - Thermal resistance defines maximum power dissipation (0.4W) on minimal copper area |
Pinout & Package
SOT363 (SC-88) surface-mount package with six terminals, molded green compound (UL 94V-0), 0.006g weight, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switching node; electrically isolated from D2 |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to PCB ground or floating reference |
| G1 | Gate of Channel 1 | Control input with ESD protection diode to S1; requires ≤±20V drive |
| D2 | Drain of Channel 2 | Independent switching node for second load or complementary stage |
| S2 | Source of Channel 2 | Separate return path-enables dual independent loads or half-bridge topology |
| G2 | Gate of Channel 2 | Isolated control input with dedicated ESD protection to S2 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability (HTOL, TC, UHAST) with PPAP documentation support |
| Low RDS(ON) at 4.5V | 335mΩ enables efficient 5V logic-driven load switching without gate boosting |
| ESD-protected gates | HBM >2kV protection per gate eliminates need for external TVS in most board-level ESD environments |
| Green, RoHS-compliant | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); matte tin finish ensures solderability |
| Fast dynamic response | Qg = 2.0nC @ 10V enables <100ns total switching time with 10Ω gate resistor |
Applications
| Automotive Motor Control | DC-DC Converter Synchronous Rectifier |
|---|---|
Use Scenario: Driving small BLDC fans or solenoid valves in engine control units and HVAC modules. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling phase current paths with independent gate timing. Use Value: 335mΩ RDS(ON) at 4.5V allows direct MCU GPIO drive, reducing BOM count and layout area. |
Use Scenario: Secondary-side rectification in 12V-to-5V/3.3V buck converters for infotainment systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency. Use Value: 190mΩ RDS(ON) cuts forward voltage drop by >70% vs. 0.4V Schottky, raising converter efficiency by ~2.5% at 1A load. |
| Automotive Load Switch | Body Control Module Power Distribution |
Use Scenario: Individual power gating for LED lighting circuits, sensors, and actuators in door modules. IC Role / Device Role / Timing Role: High-side or low-side load switch with controlled inrush and fault detection interface. Use Value: Independent gate control enables staggered turn-on to limit peak inrush current across multiple loads. |
Use Scenario: Distributed power management in central body controllers managing 10+ subsystems. IC Role / Device Role / Timing Role: Dual-channel power switch enabling redundant or split-rail distribution (e.g., VBAT and VACC). Use Value: Matched RDS(ON) between channels ensures balanced current sharing and thermal stress in parallel configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(ON) (25mΩ @ 10V), higher ID (3.8A), larger SOT23-6 package | Requires more PCB area; better suited for higher-current DC-DC stages | Select when >1.5A continuous current or <50mΩ conduction loss is required |
| NTJD4152PZ-1 | Higher RDS(ON) (420mΩ @ 4.5V), same SOT363, no AEC-Q101 qualification | Lacks automotive qualification and PPAP support; limited to industrial/commercial use | Choose only for cost-sensitive non-automotive designs where AEC-Q101 is not mandated |
Compared with DMN3190LDWQ-13, DMN3025LSD-13 delivers significantly lower conduction loss but sacrifices compactness, while NTJD4152PZ-1 offers identical footprint at the cost of reliability validation and higher on-resistance-making DMN3190LDWQ-13 the optimal balance of size, performance, and automotive compliance.
Availability
DMN3190LDWQ-13 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter synchronous rectification, and body control module load switching requiring stable component supply across production lifecycles.
Supply support for DMN3190LDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1960.
The DMN3190LDWQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding vehicle subsystems requiring robust gate drive and long-term parametric stability.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN3190LDWQ-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation at full rated current (1A), thermal design must ensure junction temperature remains ≤150°C, typically requiring derating above +70°C ambient per the 0.19W power limit and 320°C/W RθJA.
Does this part support parallel operation of both channels?
Yes-both N-channel MOSFETs are monolithically integrated but electrically isolated, allowing independent or paralleled use. When paralleled, matched RDS(ON) and thermal coupling ensure balanced current sharing; however, separate gate resistors are recommended to prevent oscillation during switching transitions.
Is the SOT363 package lead-free and RoHS compliant?
Yes-the DMN3190LDWQ-13 uses matte tin annealed over Alloy 42 leadframe, fully compliant with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU. It contains no intentionally added lead, halogens, or antimony, meeting Diodes Incorporated's "Green" definition (<900ppm Br/Cl, <1000ppm Sb).
Can this MOSFET be used in high-frequency PWM applications?
Yes-the device supports PWM frequencies up to 500kHz due to low gate charge (Qg = 2.0nC @ 10V), fast switching times (tR = 8.9ns, tF = 15.6ns), and low Ciss (87pF). Optimal performance requires proper gate driver impedance matching and minimized PCB loop inductance.
DMN3190LDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 87pF @ 20V
- Power - Max:
- 320mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN3190LDWQ-13 FAQ
1.How can I place an order for DMN3190LDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3190LDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3190LDWQ-13 reliable?
The price and inventory of DMN3190LDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3190LDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3190LDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3190LDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3190LDWQ-13?
DMN3190LDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3190LDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3190LDWQ-13?
For technical support, including DMN3190LDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3190LDWQ-13 requirements.
6.How does Aetrix verify that DMN3190LDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3190LDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3190LDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3190LDWQ-13?
All DMN3190LDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3190LDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3190LDWQ-13 part is unused and in its original packaging.
Return procedure for DMN3190LDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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