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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN31D4UFZ-7B

Name: DMN31D4UFZ-7B
Brand: Diodes Incorporated
SKU: DMN31D4UFZ-7B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN31D4UFZ-7B

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: DMN31D4UFZ-7B.pdf

Description:: MOSFET BVDSS: 25V~30V X2-DFN0606

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN31D4UFZ-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 0.62 mm × 0.62 mm X2-DFN0606-3 package, rated for 30 V V_DSS, 1.5 Ω R_DS(ON) at 4.5 V V_GS, 0.31 A continuous drain current at 25°C, and featuring 1.0 V max gate threshold voltage - optimized for low-voltage power switching in space-constrained portable electronics.

For engineers reviewing the DMN31D4UFZ-7B datasheet, DMN31D4UFZ-7B pinout, DMN31D4UFZ-7B application, or DMN31D4UFZ-7B equivalent, this page delivers verified electrical parameters, thermal performance data, package dimensions, ESD-protected gate behavior, and real-world use cases in battery-powered analog and power management switches.

Technical Context

This MOSFET employs a trench-gate process to achieve ultra-low R_DS(ON) down to 1.3 Ω (typ) at V_GS = 4.5 V while maintaining fast switching with 0.3 nC total gate charge and 5.7 ns turn-on delay. Its 1.0 V max V_GS(TH) enables direct drive from 1.8 V and 2.5 V logic rails without level shifting.

The device integrates a body diode with 0.54 V typical forward voltage at 10 mA and exhibits normalized R_DS(ON) variation of ≤1.6× across −55°C to +150°C junction temperature, supporting operation in thermally demanding environments without derating penalties beyond datasheet limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - supports input rails up to 24 V DC with 25% safety margin for transient spikes
R_DS(ON) @ 4.5 V	1.5 Ω max - enables <150 mW conduction loss at 0.31 A, critical for battery runtime
V_GS(TH) max	1.0 V - ensures reliable turn-on with 1.2 V logic, eliminating need for gate drivers in low-power systems
Q_g	0.3 nC - reduces gate drive energy and switching losses in high-frequency PWM control
P_D (Steady State)	0.3 W - defines maximum continuous dissipation on FR-4 PCB with minimum pad layout
R_θJA	403 °C/W - quantifies thermal resistance from junction to ambient under standard test conditions
C_iss	15.4 pF - impacts gate drive loop stability and Miller effect in high-speed switching

Pinout & Package

Package: X2-DFN0606-3, 0.62 mm × 0.62 mm footprint, 0.4 mm max height, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal and electrical performance
2 (Gate)	Control electrode for channel formation	ESD-protected (HBM >2 kV); requires no external gate resistor for 1.8 V logic drive due to low Q_g
3 (Drain)	Main current-carrying terminal	Connected to load or supply rail; electrically isolated from thermal pad; handles full V_DSS stress

Key Features

Feature	Design Value
Ultra-low gate threshold voltage	1.0 V max enables direct interface with 1.2 V/1.8 V microcontrollers and PMICs without level shifters
0.62 mm × 0.62 mm footprint	Reduces PCB area by >60% vs. SOT-23, enabling dense integration in wearables and hearing aids
ESD-protected gate	HBM rating >2 kV eliminates need for external gate protection in handheld assembly lines
Green, halogen-free construction	Meets IEC 61249-2-21 and JEDEC JS709E requirements for automotive and medical end equipment

Applications

Smartphone Power Sequencing

Wireless Earbud Battery Protection

Use Scenario: Controlled enable/disable of camera module power rail during sleep/wake transitions.

IC Role / Device Role / Timing Role: Low-side load switch managing 3.3 V rail sequencing with <10 μs response time.

Use Value: 1.5 Ω R_DS(ON) limits dropout to <0.5 V at 300 mA, preserving system voltage margin during peak current.

Use Scenario: Isolation of charging circuitry from main battery during firmware updates.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between Li-ion cell and USB-C PD input.

Use Value: 1.0 V V_GS(TH) allows activation directly from MCU GPIO, eliminating auxiliary bias supply.

IoT Sensor Node Sleep Mode Control

Medical Patch Monitor Analog Signal Switching

Use Scenario: Disabling RF transceiver and sensor ASIC during deep-sleep intervals to reduce quiescent current.

IC Role / Device Role / Timing Role: High-efficiency power gate with <100 nA leakage (IDSS ≤100 nA) ensuring sub-μA system standby.

Use Value: 0.3 W power rating supports intermittent 500 mA pulse loads without thermal throttling on compact PCBs.

Use Scenario: Multiplexing biopotential signals (ECG, EMG) between front-end amplifier and ADC inputs.

IC Role / Device Role / Timing Role: Low-charge-injection analog switch with 0.54 V body diode forward drop limiting signal distortion.

Use Value: 15.4 pF C_iss minimizes capacitive loading on high-impedance sensor nodes, preserving SNR above 1 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LFG-7	30 V V_DSS, 2.2 Ω R_DS(ON) @ 4.5 V, 0.6 V V_GS(TH) max, same X2-DFN0606-3 package	Lower gate threshold enables earlier turn-on but higher R_DS(ON) increases conduction loss at >200 mA	Select when driving from sub-1.5 V logic; avoid if minimizing I²R loss at 300 mA is critical
AO3400A	30 V V_DSS, 2.7 Ω R_DS(ON) @ 4.5 V, 1.4 V V_GS(TH) max, SOT-23-3 package (2.9 mm × 1.3 mm)	Larger footprint and higher threshold require gate driver for 1.8 V logic; 403 °C/W R_θJA vs. 390.5 °C/W for DMN31D4UFZ	Choose only if legacy SOT-23 layout reuse is mandatory; not suitable for new ultra-compact designs

Compared with DMN3026LFG-7 and AO3400A, DMN31D4UFZ-7B uniquely balances 1.0 V V_GS(TH) and 1.5 Ω R_DS(ON) in a 0.62 mm × 0.62 mm footprint - delivering lowest gate-drive voltage compatibility without sacrificing conduction efficiency in space-limited battery systems.

Availability

DMN31D4UFZ-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery protection, and IoT sensor node sleep mode control requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN31D4UFZ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, low-power, and miniaturized components for consumer, industrial, and automotive markets.

This part belongs to Diodes' X2-DFN ultra-small signal MOSFET product line, engineered specifically for battery-powered portable devices where board space, gate drive simplicity, and low standby leakage are primary design constraints.

FAQ

What is the maximum continuous drain current for DMN31D4UFZ-7B at 85°C ambient?

The datasheet specifies 0.2 A continuous drain current at T_A = +85°C with device mounted on FR-4 PCB using minimum recommended pad layout. This reflects thermal derating due to 403 °C/W R_θJA; actual current capability depends on PCB copper area and airflow. No derating curve is provided beyond 85°C ambient.

Does DMN31D4UFZ-7B include integrated ESD protection on the gate terminal?

Yes - the device features ESD-protected gate structure with human-body-model (HBM) rating exceeding 2 kV, as confirmed in the "Features and Benefits" section and marking diagram ("ESD PROTECTED e4"). No external gate protection diode is required for standard handling and assembly per JESD22-A114.

Can DMN31D4UFZ-7B be used in reverse-current blocking configurations?

Yes - its intrinsic body diode has 0.54 V typical forward voltage at 10 mA and supports bidirectional current flow. When used as a high-side switch with source tied to load, it blocks reverse current from load to supply. The 30 V V_DSS rating ensures safe operation with 24 V nominal supplies.

What is the moisture sensitivity level (MSL) and reflow profile compliance for DMN31D4UFZ-7B?

The device is rated MSL Level 1 per J-STD-020, meaning it is not moisture-sensitive and may be stored indefinitely at ≤30°C/60% RH without dry pack or baking. It complies with IPC/JEDEC J-STD-020D reflow profiles for lead-free soldering, with peak temperature up to 260°C for ≤30 seconds.

DMN31D4UFZ-7B Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.3 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 15.4 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN0606-3

DMN31D4UFZ-7B FAQ

1.How can I place an order for DMN31D4UFZ-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN31D4UFZ-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN31D4UFZ-7B reliable?

The price and inventory of DMN31D4UFZ-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D4UFZ-7B is usually 5 days.

3.What payment methods are accepted for DMN31D4UFZ-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D4UFZ-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN31D4UFZ-7B?

DMN31D4UFZ-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN31D4UFZ-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN31D4UFZ-7B?

For technical support, including DMN31D4UFZ-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D4UFZ-7B requirements.

6.How does Aetrix verify that DMN31D4UFZ-7B is sourced from the original manufacturer or authorized distributors?

All DMN31D4UFZ-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D4UFZ-7B meets industry standards.

7.What is the process for return or replacement of DMN31D4UFZ-7B?

All DMN31D4UFZ-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D4UFZ-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN31D4UFZ-7B part is unused and in its original packaging.

Return procedure for DMN31D4UFZ-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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