Diodes Incorporated DMN31D5L-13

Overview

DMN31D5L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 1.5Ω R_DS(ON) at V_GS = 4.0V, and 0.5A continuous drain current at T_A = +25°C. It delivers low on-resistance with fast switching speed and ESD-protected gate, targeting space-constrained power management and motor control circuits.

For engineers reviewing the DMN31D5L-13 datasheet, DMN31D5L-13 pinout, DMN31D5L-13 application, or DMN31D5L-13 equivalent, key selection criteria include its 30V breakdown voltage, 1.5Ω on-resistance at 4V gate drive, 50pF input capacitance, 357°C/W thermal resistance on FR-4, and SOT23 footprint compatibility with low-power DC-DC load switches and LED drivers.

Technical Context

This discrete MOSFET operates as a low-side switch with enhancement-mode gate control, requiring ≥0.8V (min) and ≤1.6V (max) gate threshold to initiate conduction. Its R_DS(ON) remains stable across -55°C to +150°C junction temperature, and dynamic parameters-including 0.5nC total gate charge at V_GS = 4.5V and 3.5ns turn-on delay-support efficient PWM operation up to several hundred kHz.

The device integrates an intrinsic body diode with 1.2V forward voltage at 10mA, enabling synchronous rectification or freewheeling in buck converters and H-bridge motor drivers. Thermal performance is defined for two PCB mounting conditions: 357°C/W (standard FR-4) and 240°C/W (enhanced copper area), directly impacting maximum sustainable power dissipation (350mW vs. 520mW).

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4mm × 1.3mm × 0.9mm), UL 94V-0 rated, matte tin-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and AO3400, DMN31D5L-13 offers optimal balance of logic-level compatibility (0.8–1.6V V_GS(TH)), moderate R_DS(ON), and proven reliability in space-constrained 3.3V embedded systems-making it preferred for battery-powered load switching where gate drive headroom is limited.

Availability

DMN31D5L-13 is available at Aetrix Electronics and suitable for motor control, power management functions, and backlighting requiring stable component supply in high-mix, low-volume production.

Supply support for DMN31D5L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN31D5L belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for low-voltage, low-power switching in portable and space-constrained applications where gate drive voltage is limited to 2.5V–4.5V.

FAQ

Is DMN31D5L-13 suitable for 3.3V microcontroller GPIO direct drive?

Yes. With a gate threshold voltage range of 0.8–1.6V and guaranteed R_DS(ON) ≤2.0Ω at V_GS = 2.5V, DMN31D5L-13 fully enhances using standard 3.3V GPIO outputs. Its low gate charge (0.5nC at 4.5V) further ensures minimal loading on MCU pins during switching.

What is the maximum continuous power dissipation on a standard FR-4 PCB?

At T_A = +25°C with standard FR-4 layout (2oz copper, minimum pad), the maximum continuous power dissipation is 350mW, derived from R_θJA = 357°C/W and T_J(MAX) = +150°C. This supports up to ~0.5A at 1.5Ω R_DS(ON) before thermal limiting occurs.

Does DMN31D5L-13 include integrated gate protection?

Yes. The device features built-in ESD protection on the gate terminal, rated to ≥2kV HBM per JEDEC JESD22-A114. This eliminates the need for external gate resistors or TVS diodes in typical board-level ESD environments.

Can DMN31D5L-13 be used in place of a P-channel MOSFET for high-side switching?

No. DMN31D5L-13 is an N-channel device optimized for low-side switching. Using it as a high-side switch would require gate voltage above the source (i.e., >V_DD), which is not supported by its ±20V V_GS rating or standard logic-level drive. A dedicated high-side driver or P-channel alternative is required.