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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN31D5L-7

Name: DMN31D5L-7
Brand: Diodes Incorporated
SKU: DMN31D5L-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN31D5L-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN31D5L-7.pdf

Description:: MOSFET N-CH 30V 500MA SOT23 T&R

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Product details

Overview

DMN31D5L-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DSS, 1.5Ω R_DS(ON) at V_GS = 4.0V, and 0.5A continuous drain current at T_A = +25°C. It delivers low on-resistance with fast switching speed and ESD-protected gate, targeting compact power management in space-constrained portable electronics.

For engineers reviewing the DMN31D5L-7 datasheet, DMN31D5L-7 pinout, DMN31D5L-7 application, or DMN31D5L-7 equivalent, key selection criteria include its 2.0Ω R_DS(ON) at 2.5V gate drive, 50pF C_iss, 350mW power dissipation on FR-4 PCB, and suitability for low-duty-cycle load switching in battery-powered systems.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage (V_GS(TH)) of 0.8–1.6V, enabling reliable turn-on from 2.5V logic-level sources. Its low input capacitance (C_iss = 50pF) and fast switching times (t_D(ON) = 3.5ns, t_F = 13.8ns) support high-frequency PWM control in DC-DC converters and LED drivers.

The device integrates an intrinsic body diode with V_SD ≤ 1.2V at I_S = 10mA and supports pulsed drain currents up to 5A (10µs, 1% duty). Thermal resistance R_θJA is 357°C/W on standard FR-4 layout, limiting steady-state power handling without heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum drain-source blocking voltage before avalanche conduction begins.
R_DS(ON) @ V_GS = 4.0V	1.5Ω - On-resistance determining I²R conduction loss in 3.3V/5V logic-driven switches.
R_DS(ON) @ V_GS = 2.5V	2.0Ω - Confirmed usable drive margin for low-voltage microcontrollers and battery-supplied circuits.
C_iss	50pF - Input capacitance directly affecting gate drive energy and switching transition time.
t_F	13.8ns - Fall time defining minimum achievable PWM off-time and reverse recovery behavior.
P_D (FR-4, 2oz Cu)	350mW - Steady-state power limit on standard PCB layout without thermal relief pads.
V_GS(TH)	0.8–1.6V - Gate threshold range ensuring turn-on compatibility with 1.8V–3.3V I/O domains.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3 terminals, 0.009g mass, UL 94V-0 flammability rating, and matte tin-plated copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side or low-side switch node)	Connected to load or supply rail; handles full switched current and must be routed with adequate copper area for thermal management.
Gate (G)	Control electrode for channel formation	ESD-protected input requiring <10kΩ series resistor for robustness; sensitive to floating conditions during PCB handling.
Source (S)	Reference terminal for gate drive and current return path	Typically tied to ground (low-side) or load (high-side); forms body diode cathode and influences thermal coupling to PCB.

Key Features

Feature	Design Value
Low R_DS(ON) at 2.5V drive	2.0Ω enables direct interface with 2.5V/3.3V GPIO without level-shifting circuitry.
ESD-protected gate	HBM rating ≥2kV per JEDEC JS-001, reducing need for external TVS protection in handheld designs.
Low C_iss (50pF)	Minimizes gate charge (Q_g = 0.5nC @ 4.5V), lowering driver power and enabling >1MHz switching.
Green, halogen-free construction	<900ppm Br/Cl, <1000ppm Sb - compliant with RoHS 3 and automotive material declarations.
Fast turn-off (t_F = 13.8ns)	Reduces switching losses in PWM dimming and synchronous rectification applications.

Applications

Motor Control

Power Management Functions

Use Scenario: Driving small DC brush motors in portable medical pumps and smart locks.

IC Role / Device Role: Low-side switch controlling motor current path to ground.

Use Value: 2.0Ω R_DS(ON) at 2.5V ensures full torque delivery from 3.3V MCU outputs without gate boosting.

Use Scenario: Load switching for USB-powered peripherals and sensor modules.

IC Role / Device Role: High-efficiency enable switch isolating downstream rails during sleep mode.

Use Value: 1.5Ω R_DS(ON) limits voltage drop to <7.5mV at 5mA standby current, preserving battery life.

Backlighting

Portable Electronics Power Path

Use Scenario: PWM-controlled current sink for white LED strings in handheld displays.

IC Role / Device Role: Constant-current switch modulating LED brightness via gate voltage.

Use Value: 13.8ns fall time supports >50kHz dimming frequency without visible flicker or audible noise.

Use Scenario: Reverse-polarity and overcurrent protection in USB-C power delivery accessories.

IC Role / Device Role: Low-loss pass element in ideal diode configuration with external controller.

Use Value: Body diode V_SD ≤ 1.2V at 10mA enables efficient forward conduction when used as active rectifier.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026L-7	R_DS(ON) = 0.85Ω @ V_GS = 4.5V; higher ID_max = 1.2A; same SOT23 package	Better suited for higher-current loads (>0.6A) where lower conduction loss justifies increased gate charge (Q_g = 1.6nC)	Select when system requires <1Ω on-resistance and can support stronger gate drive capability.
AO3400	R_DS(ON) = 0.55Ω @ V_GS = 10V; no specified 2.5V drive rating; slightly larger R_θJA = 390°C/W	Requires 4.5–10V gate drive; less suitable for 2.5V logic; higher thermal resistance limits power density	Choose only if gate voltage is guaranteed ≥4.5V and board layout allows extra thermal margin.

Compared with DMN31D5L-7, DMN3026L-7 offers lower R_DS(ON) but demands more gate drive energy, while AO3400 lacks verified 2.5V operation and has inferior thermal performance-making DMN31D5L-7 optimal for ultra-low-voltage, space-constrained load switching.

Availability

DMN31D5L-7 is available at Aetrix Electronics and suitable for motor control, power management functions, and backlighting requiring stable component supply across consumer, industrial, and medical portable equipment programs.

Supply support for DMN31D5L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN31D5L-7 belongs to Diodes' logic-level MOSFET product line, engineered specifically for low-voltage, low-power switching in battery-operated and space-constrained applications where gate drive headroom is limited.

FAQ

What is the maximum safe operating junction temperature for DMN31D5L-7?

The DMN31D5L-7 has a specified operating junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C; sustained operation above this threshold risks permanent parametric shift or thermal runaway. Derating is required above +75°C ambient due to R_θJA = 357°C/W on standard FR-4 layout.

Can DMN31D5L-7 be used in high-side switching configurations?

Yes, DMN31D5L-7 supports high-side switching when driven by a gate voltage exceeding the source potential by ≥2.5V. However, it requires a dedicated high-side driver or charge pump since its V_GS rating is ±20V and no integrated bootstrap circuitry exists. The body diode orientation (source-to-drain) must also be verified for intended current direction.

Is the DMN31D5L-7 RoHS 3 and REACH compliant?

Yes, DMN31D5L-7 is fully compliant with EU Directive 2015/863/EU (RoHS 3), containing <900ppm bromine, <900ppm chlorine, and <1000ppm antimony compounds. It is also REACH SVHC-free per Diodes Incorporated's published compliance documentation and carries "Green" and halogen-free markings per datasheet Note 3.

What is the typical gate charge required to fully turn on DMN31D5L-7?

The total gate charge (Q_g) is 0.5nC at V_GS = 4.5V and 1.2nC at V_GS = 10V, measured under V_DS = 10V and I_D = 250mA. For 2.5V–4.0V logic-level drive, effective Q_g falls between these values, with Qgs = 0.2nC and Qgd = 0.1nC confirming rapid Miller plateau traversal.

DMN31D5L-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN31D5L-7 FAQ

1.How can I place an order for DMN31D5L-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN31D5L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN31D5L-7 reliable?

The price and inventory of DMN31D5L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5L-7 is usually 5 days.

3.What payment methods are accepted for DMN31D5L-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5L-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN31D5L-7?

DMN31D5L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN31D5L-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN31D5L-7?

For technical support, including DMN31D5L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5L-7 requirements.

6.How does Aetrix verify that DMN31D5L-7 is sourced from the original manufacturer or authorized distributors?

All DMN31D5L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5L-7 meets industry standards.

7.What is the process for return or replacement of DMN31D5L-7?

All DMN31D5L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5L-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN31D5L-7 part is unused and in its original packaging.

Return procedure for DMN31D5L-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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