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Diodes Incorporated DMN31D5UDA-7B
- Part No.:
- DMN31D5UDA-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-SMD, No Lead
- Datasheet:
-
DMN31D5UDA-7B.pdf
- Description:
- MOSFET 2N-CH 0.4A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,641
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Product details
Overview
DMN31D5UDA-7B from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an ultra-small X2-DFN0806-6 package (0.8 mm × 0.6 mm), rated for 30 V VDSS, 1.5 Ω RDS(ON) at VGS = 4.5 V and ID = 100 mA, with gate threshold voltage as low as 0.4 V. It serves as a compact, low-voltage load switch or analog signal switch in space-constrained portable electronics.
For engineers reviewing the DMN31D5UDA-7B datasheet, DMN31D5UDA-7B pinout, DMN31D5UDA-7B application, or DMN31D5UDA-7B equivalent, key selection criteria include its sub-1-V gate threshold, dual-channel integration in a 6-pin DFN, low input capacitance (22.6 pF), ESD-protected gate, and suitability for battery-powered logic-level switching where board area and power efficiency are critical.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate drain, source, and gate terminals. Its ultra-low VGS(TH) (0.4–1.0 V) enables direct drive from 1.8 V or 2.5 V logic without level shifting, while low RDS(ON) at low VGS supports efficient operation in always-on or low-duty-cycle power paths.
Thermal performance is constrained by its 0.37 W PD and 339 °C/W RθJA on FR-4, requiring careful PCB layout per Diodes' recommended pad pattern. The device includes integrated gate protection diodes and is fully RoHS-compliant, halogen- and antimony-free.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage; suitable for 3.3 V/5 V rail switching and USB-powered systems. |
| RDS(ON) | 1.5 Ω @ VGS = 4.5 V, ID = 100 mA - Enables <150 mW conduction loss at 0.4 A, critical for thermal budget in thin-profile wearables. |
| VGS(TH) | 0.4–1.0 V - Ensures reliable turn-on from 1.8 V GPIOs; eliminates need for external level shifters in low-voltage microcontroller interfaces. |
| Ciss | 22.6 pF - Low input capacitance minimizes gate drive current demand and speeds switching in high-frequency enable/disable control. |
| Qg | 0.38 nC - Ultra-low total gate charge reduces switching energy and enables fast transitions (<10 ns rise/fall) with minimal driver strength. |
| PD | 0.37 W - Power dissipation limit on standard FR-4; requires thermal pad or copper pour to sustain >0.3 A continuous current. |
Pinout & Package
Package: X2-DFN0806-6 - ultra-compact 0.8 mm × 0.6 mm, 0.36 mm height, 6-terminal leadless plastic package with matte tin finish; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switched output node; electrically isolated from D2; connects to load or supply rail. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or common return path; forms current path with D1. |
| G1 | Gate of Channel 1 | Control input for Channel 1; ESD-protected; driven directly by 1.8 V logic; no external resistor required for basic switching. |
| D2 | Drain of Channel 2 | Independent switched output; no internal connection to D1; supports dual-path isolation (e.g., dual-rail power gating). |
| S2 | Source of Channel 2 | Independent reference for Channel 2; may be tied to same or different potential than S1 depending on circuit topology. |
| G2 | Gate of Channel 2 | Independent control input; identical electrical characteristics to G1; enables synchronous or asynchronous dual-channel control. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) down to 0.4 V ensures full enhancement with 1.8 V logic, eliminating level-shifter ICs in portable MCU designs. |
| Dual independent channels | Two isolated N-MOSFETs in one die reduce BOM count and PCB area versus discrete solutions-ideal for dual-rail power sequencing. |
| ESD-protected gate | Integrated gate protection diodes rated to ±2 kV HBM allow safe handling and assembly without additional transient suppression components. |
| Low-input capacitance | Ciss = 22.6 pF limits gate drive current to <1 µA at 1 MHz, enabling use with weak GPIOs and reducing EMI during switching. |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant; meets IPC-J-STD-020 Level 1 moisture sensitivity for standard reflow without baking. |
Applications
| Smartphone Power Sequencing | Wearable Sensor Hub Switching |
|---|---|
|
Use Scenario: Enabling/disabling multiple low-power sensor rails (e.g., accelerometer, gyroscope, ambient light) under MCU control in a fitness tracker. IC Role / Device Role / Timing Role: Dual-channel load switch managing independent 1.8 V and 2.8 V sensor supplies; each channel controlled by separate GPIO. Use Value: Eliminates need for two discrete MOSFETs and associated gate resistors, saving >1.2 mm² PCB area and simplifying layout in 8 mm × 8 mm modules. |
Use Scenario: Isolating backup battery path from main Li-ion supply during charging cycles in hearable devices. IC Role / Device Role / Timing Role: Independent high-side switches controlling main and backup power domains; coordinated via firmware to prevent backfeed. Use Value: Sub-1 V VGS(TH) allows direct MCU GPIO control without charge pump, reducing component count and quiescent current in always-on mode. |
| USB-C Port Power Management | IoT Edge Node Signal Routing |
|
Use Scenario: Managing VBUS and CC line power delivery paths in compact USB-C accessories like dongles or adapters. IC Role / Device Role / Timing Role: Dual N-MOSFET used for VBUS switching and CC line pull-up/down control; operates at 3.3 V logic levels. Use Value: 1.5 Ω RDS(ON) at 4.5 V ensures <100 mV drop at 60 mA CC line current, preserving USB PD specification compliance. |
Use Scenario: Multiplexing analog sensor outputs (e.g., temperature, humidity) to a shared ADC input in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Analog switch implementing low-leakage signal routing; operated in linear region with VGS > VDS. Use Value: Low RDS(ON) variation over temperature (±15% from −55°C to +125°C) maintains consistent signal gain across operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UVT-7 | Single-channel, 20 V VDSS, 0.85 Ω RDS(ON) @ 4.5 V, SOT-563 package (1.6 mm × 1.6 mm) | Larger footprint, lower voltage rating; lacks dual integration and sub-1 V gate threshold | Choose when higher RDS(ON) tolerance and single-channel operation suffice; not suitable for 1.8 V logic drive. |
| AO6401 | Dual N-channel, 30 V, 2.2 Ω RDS(ON) @ 4.5 V, TSOP-6 package (2.9 mm × 1.6 mm), VGS(TH) = 0.7–1.4 V | Higher gate threshold and larger package; no ESD protection diodes integrated | Acceptable where board space is less constrained and 2.5 V+ logic is available; requires external ESD protection in harsh environments. |
Compared with DMN31D5UDA-7B, DMN2053UVT-7 offers lower on-resistance but sacrifices dual functionality and ultra-low-threshold drive, while AO6401 provides dual channels in a larger package with higher gate voltage requirements-making DMN31D5UDA-7B optimal for miniaturized, 1.8 V–2.5 V systems demanding integrated ESD robustness.
Availability
DMN31D5UDA-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, wearable sensor hub switching, and USB-C port power management requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for DMN31D5UDA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN31D5UDA-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained portable electronics where low-voltage logic compatibility, minimal PCB footprint, and integrated ESD protection are mandatory design requirements.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The DMN31D5UDA-7B supports 0.32 A continuous drain current per channel at TA = +70°C with VGS = 4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the X2-DFN0806-6 package on standard FR-4 PCBs without enhanced copper pours.
Can both channels be used in parallel to increase current capacity?
No-channels are electrically isolated but not matched for parallel operation. Parameter variation (e.g., VGS(TH) tolerance ±0.3 V) risks current imbalance and thermal runaway. Diodes does not characterize or recommend paralleling; use a single-channel part rated for higher current instead.
Is the body diode suitable for reverse-current blocking in battery backup circuits?
Yes-the intrinsic body diode has a typical forward voltage of 0.6 V at 10 mA and is rated for 0.8 A continuous forward current. It supports reverse-current blocking in low-current backup paths, but external Schottky diodes are preferred for <0.3 V drop requirements.
Does the "B7" marking on the top indicate a specific revision or process lot?
"B7" is the product type marking code per Diodes' standard, identifying the DMN31D5UDA device family and not indicating revision, date code, or process lot. Full traceability requires the full reel label and Diodes' internal lot code, which is not visible on the top-marked surface.
DMN31D5UDA-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0806-6
DMN31D5UDA-7B FAQ
1.How can I place an order for DMN31D5UDA-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN31D5UDA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN31D5UDA-7B reliable?
The price and inventory of DMN31D5UDA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5UDA-7B is usually 5 days.
3.What payment methods are accepted for DMN31D5UDA-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5UDA-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN31D5UDA-7B?
DMN31D5UDA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN31D5UDA-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN31D5UDA-7B?
For technical support, including DMN31D5UDA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5UDA-7B requirements.
6.How does Aetrix verify that DMN31D5UDA-7B is sourced from the original manufacturer or authorized distributors?
All DMN31D5UDA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5UDA-7B meets industry standards.
7.What is the process for return or replacement of DMN31D5UDA-7B?
All DMN31D5UDA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5UDA-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN31D5UDA-7B part is unused and in its original packaging.
Return procedure for DMN31D5UDA-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN31D5UDA-7B Tags
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SSM6N7002KFU,LF
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