Diodes Incorporated DMN31D5UDAQ-7B

Overview

DMN31D5UDAQ-7B from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an ultra-compact X2-DFN0806-6 package (0.8 mm × 0.6 mm), rated for 30 V V_DSS, 1.5 Ω R_DS(ON) @ 4.5 V_GS, and 0.40 A continuous drain current at +25°C. It features low gate threshold voltage (0.4–1.0 V), ESD-protected gates, and AEC-Q101 qualification for automotive power management switching.

For engineers reviewing the DMN31D5UDAQ-7B datasheet, DMN31D5UDAQ-7B pinout, DMN31D5UDAQ-7B application, or DMN31D5UDAQ-7B equivalent, this device supports low-voltage, space-constrained load switching in battery-powered systems, automotive body electronics, and portable sensor interfaces where gate drive below 2.5 V is required and thermal dissipation is limited to 0.37 W.

Technical Context

This dual MOSFET integrates two independent N-channel channels in a single die with shared thermal path and separate gate terminals (G1/G2), enabling synchronous or isolated switching control. Each channel exhibits sub-1 V gate threshold and maintains R_DS(ON) ≤ 2.0 Ω down to V_GS = 2.5 V, supporting logic-level drive from 1.8 V and 2.5 V microcontrollers.

Its ultra-low input capacitance (C_iss = 22.6 pF) and fast switching (t_D(ON) = 3.2 ns, t_F = 7.5 ns) minimize dynamic losses in high-frequency PWM applications, while the integrated body diodes (V_SD = 0.6–1.0 V @ 10 mA) support bidirectional current handling in analog switch and reverse-polarity protection roles.

Key Specifications

Pinout & Package

Package: X2-DFN0806-6 - 0.8 mm × 0.6 mm, 0.36 mm height, 6-terminal leadless plastic package with exposed thermal pad (no internal thermal slug). Matte tin annealed copper lead-frame, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with DMN31D5UDAQ-7B, DMN3026LSD-13 trades integration and size for cost and availability, while AO3415 prioritizes conduction efficiency over space and automotive compliance-making DMN31D5UDAQ-7B optimal for AEC-Q101–mandated, area-constrained 12–24 V applications.

Availability

DMN31D5UDAQ-7B is available at Aetrix Electronics and suitable for automotive body electronics, portable medical devices, USB-C power adapters, and industrial IoT edge nodes requiring stable component supply with guaranteed long-term sourcing.

Supply support for DMN31D5UDAQ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMN31D5UDAQ-7B belongs to Diodes' AEC-Q101–qualified X2-DFN logic-level MOSFET product line, engineered specifically for space- and power-constrained automotive and portable electronics where gate drive compatibility with 1.8 V–3.3 V logic is essential.

FAQ

What is the maximum continuous drain current for each channel at +70°C?

Each channel supports 0.32 A continuous drain current at +70°C ambient temperature when mounted on an FR-4 PCB with minimum recommended pad layout. This value reflects thermal derating due to increased R_DS(ON) and reduced power dissipation capability at elevated temperatures, as specified in the Absolute Maximum Ratings table.

Is the thermal pad on the X2-DFN0806-6 package electrically connected to any terminal?

No-the exposed thermal pad on the bottom of the X2-DFN0806-6 package is not internally connected to any pin or terminal. It is intended solely for thermal conduction to the PCB and must be soldered to a dedicated copper pour for optimal heat dissipation; electrical isolation from all channels is maintained.

Can DMN31D5UDAQ-7B be used in linear (analog) operation mode?

Yes-its low R_DS(ON) variation over V_GS and stable transfer characteristics (Figure 2) support analog switch applications. However, linear operation above 0.1 A requires careful thermal design due to its 0.37 W power limit; it is optimized for switching, not power amplification.

Does the device include back-to-back body diodes between D1–S1 and D2–S2?

Yes-each channel contains a monolithic parasitic body diode oriented from source to drain (S→D), enabling reverse-current conduction in applications like reverse-polarity protection and flyback energy recovery. These diodes are not isolated from the MOSFET structure and share the same silicon die.