Diodes Incorporated DMN31D5UDJ-7

Overview

DMN31D5UDJ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an ultra-small SOT963 package (1.0 mm × 1.0 mm), optimized for low-voltage, high-efficiency power switching. It delivers R_DS(ON) of 1.5 Ω at V_GS = 4.5 V, 1.0 V max gate threshold voltage, and supports 220 mA continuous drain current at T_A = +25°C - ideal for space-constrained battery-powered load switching.

For engineers reviewing the DMN31D5UDJ-7 datasheet, DMN31D5UDJ-7 pinout, DMN31D5UDJ-7 application, or DMN31D5UDJ-7 equivalent, key selection criteria include its ultra-low V_GS(TH), sub-1Ω typical on-resistance at low gate drive, ESD-protected gate, and dual-channel integration in a 6-pin ultra-miniature package for compact analog/power management designs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each with separate source, drain, and gate terminals. Its 1.0 V maximum V_GS(TH) enables direct interfacing with 1.8 V and 2.5 V logic outputs without level shifting.

The device features integrated gate protection diodes per channel and exhibits low dynamic parameters: C_iss = 22.6 pF, Q_g = 0.38 nC, and fast switching times (t_D(ON) = 3.2 ns, t_F = 7.5 ns) under 4.5 V gate drive - supporting high-frequency DC-DC and load-switching topologies.

Key Specifications

Pinout & Package

Package: SOT963 - ultra-compact 6-pin surface-mount package (1.0 mm × 1.0 mm footprint, 0.45 mm height), moisture sensitivity level 1, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel low-threshold MOSFET applications.

Compared with DMN2053UVT-7 and AO6401, DMN31D5UDJ-7 uniquely balances sub-1V turn-on, dual-channel independence, and 1.0 mm² footprint - making it optimal for miniaturized 1.8 V–2.5 V systems where thermal headroom and layout density are limiting factors.

Availability

DMN31D5UDJ-7 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage sensor interface, and portable LED driver control requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN31D5UDJ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and computing markets.

The DMN31D5UDJ-7 belongs to Diodes' ultra-low-threshold MOSFET product line, engineered specifically for direct logic-level switching in space- and power-constrained portable electronics.

FAQ

What is the maximum safe operating junction temperature for DMN31D5UDJ-7?

The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C. Derating begins at +70°C ambient due to its 361°C/W R_θJA; at 220 mA and 1.5 Ω R_DS(ON), self-heating exceeds 70°C rise above ambient on standard FR-4, requiring thermal pad design or reduced current above +70°C ambient.

Can DMN31D5UDJ-7 be used in a high-side switch configuration?

Yes - each channel operates independently with isolated source terminals. For high-side use, connect S1/S2 to the positive rail and D1/D2 to the load. Gate drive must exceed the source voltage by ≥1.0 V (e.g., 3.3 V rail requires ≥4.3 V gate drive), so external charge-pump or level-shifting circuitry is needed unless using a dedicated high-side driver IC.

Does DMN31D5UDJ-7 include body diodes, and are they rated for reverse recovery?

Each channel includes an intrinsic body diode (anode at S, cathode at D). The datasheet specifies V_SD = 0.6–1.0 V at I_S = 10 mA but does not characterize reverse recovery time (t_rr) or Q_rr. These diodes are intended for clamping and freewheeling in low-frequency (<100 kHz), low-current (<200 mA) applications - not for synchronous rectification or high-speed flyback.

Is the SOT963 package compatible with standard reflow profiles for lead-free soldering?

Yes - the SOT963 package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 10–30 sec above 217°C). Its matte tin finish over copper leadframe meets MIL-STD-202 Method 208 solderability requirements, and the 0.027 g mass ensures uniform heating without tombstoning on fine-pitch layouts.